砷

Such as IBM, General Electric and Hewlett Packard, also frequently break away and form their own small companies to develop, produce and market new advanced products, services and technologies, such as the gallium arsenide high-speed semi-conductor as a replacement for silicon.

大公司的员工，（如IBM，通用电气，惠普），经常地跳槽成立自己的公司，开发，生产，销售新的，先进的产品，服务和技术，例如嫁砷化合物高速半导体作为硅的替代物。

In addition, silicon-germanium is a less expensive material than the compound semiconductors such as gallium arsenide or indium phosphide that have long been used in radar systems.

此外，硅锗是一种不太昂贵的材料比化合物半导体，如砷化镓或磷化铟，长期被用于雷达系统。

The photocathode is coated with sensitive gallium arsenide, which allows for a more efficient conversion of light to electrical energy at extremely low levels of light.

其表面镀上一层很敏感的砷化镓光电阴极涂层，，在极弱光线下它能使光更有效的转化为电能。

Many sulphides, selenides, and tellurides have the nickel arsenide's NiAs type of structure

许多硫化物，硒化物和碲化物具有砷化镍NiAs型的结构。

Silicon-germanium amplifiers can only produce about one watt of radio frequency power, versus 10 watts from a typical gallium arsenide device.

硅锗放大器只能生产约1瓦特的射频功率，与10瓦的一个典型的砷化镓器件。

The InP process technology also has superior material properties compared with Agilent\'s prior-generation gallium arsenide process.

比起安捷伦前一代的砷化镓制程，InP制程技术拥有更佳的材料特性。

Computer simulation for the metal, silicon dioxide, gallium arsenide by the different thickness of surface plasma waves generated by analysis and comparison done by analysis of surface plasma waves to find the best angle and resonance absorption.

电脑模拟时针对金属、二氧化矽、砷化镓在不同厚度时所产生的表面电浆波做分析与比较，藉由分析表面电浆波找出共振角与最佳的吸收度。

Because of the rapid development of the wireless communication technology, the design and research of the integrated circuits in the related field has gained more and more attention in recent years. And with the advance of the IC process technology, the cutoff frequency of MOS devices can reach several giga herz or more. It is a trend that CMOS process will replace the III-V compound process such as gallium arsenide or silicon bipolar process which were dominant in the fields of radio frequency and microwave.

近年来，由于无线通信技术的飞速发展，相关领域的集成电路的设计研究也受到越来越多的关注；同时由于工艺技术的不断进步，MOS器件的特征频率也可以达到几个GHz或更高的水平，原来在射频、微波领域占主导地位的三五族化合物半导体工艺如砷化镓及硅双极型工艺也有逐渐被CMOS工艺所取代的趋势。

Employees of large companies.(Such as IBM, General Electric and Hewlett Packard), also frequently break away and form their own small companies to develop, produce and market new advanced products, services and technologies, such as the gallium arsenide high-speed semi-conductor as a replacement for silicon.

像国际商用机器公司、通用电器公司和赫勒特-帕克特公司这些大公司的雇员也常常离开公司，成立他们自己的小公司，开发、生产和销售新的先进产品，提供服务和技术，如用砷化镓高速度半导体来代替硅片。

The compound semiconductors of III-V Group just as gallium arsenide have hige carrier transition ratio and good optoelectronic performance, so the study and application of these materials are very hot.

以砷化镓为代表的Ⅲ-Ⅴ族化合物半导体具有高度迁移率和比硅更优异的光电子等性能，许多国内外关于这类材料的研究和应用一直是热门课题。

It has been put forward that there exists single Ball point and double Ball points on the symmetrical connecting-rod curves of equilateral mechanisms.

从鲍尔点的形成原理出发，分析对称连杆曲线上鲍尔点的产生条件，提出等边机构的对称连杆曲线上有单鲍尔点和双鲍尔点。

The factory affiliated to the Group primarily manufactures multiple-purpose pincers, baking kits, knives, scissors, kitchenware, gardening tools and beauty care kits as well as other hardware tools, the annual production value of which reaches US$ 30 million dollars.

集团所属工厂主要生产多用钳、烤具、刀具、剪刀、厨具、花园工具、美容套等五金产品，年生产总值3000万美元，产品价廉物美、选料上乘、质量保证，深受国内外客户的青睐