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CdSe QDs of zinc blende structure have been synthesized by a simple ethylenediamine-assisted method.

采用简单的乙二胺辅助方法合成出闪锌型结构的CdSe QDs。

The calculated results show that Zinc blende CdTe is direct semiconductor with the band gap of 0.671eV.

计算表明,闪锌型CdTe为直接带隙半导体,禁带宽度为0.671eV。

The results show that these particles are good crystal zinc blende with average size of 50 nm, and these particles also possess good IR transmittance in the range from 400 to 4 000 cm1 and good thermal stability in oxygen.

结果表明:该颗粒为结晶完全的闪锌,平均粒度为50 nm,且颗粒在400~4 000 cm1具有红外透光性,在纯氧气氛围中具有良好的热稳定性。

Zinc sulfate was produced in process of soaking blende with sulfuric acid of high concentration in oxygen and at normal pressure.

研究了在常压、通氧条件下,用浓硫酸浸取闪锌制取硫酸锌时酸浸条件对锌浸取率的影响。

XRD and TEM data indicated that the crystal has cubic structure of blende with cell constant of α=0.5390 nm in the range of 250~300 nm.

由XRD和TEM的结果显示,其结构为立方闪锌,晶格常数为α=0.5390 nm。

The results show that these particles are cubical zinc blende, and the morphology of raw material has little influence on the morphology of product.

结果表明,原料的形貌对产物的形貌基本没有影响,纳米硫化锌颗粒为结晶良好的立方体闪锌;透射电镜分析晶体的生长过程表明,晶体呈棱柱体形,遵从碱性溶液中晶体极性生氏机制。

The main mineral composition of the ore is zinc blende and lead glance.

物成份主要为闪锌,次为方铅

The electronic density of states on zinc blende CdTe, VCd system and CdTe doping Cu were analyzed with density functional theory.

研究中运用密度泛函相关理论,分析闪锌结构CdTe,Cd空位体系和掺Cu体系的电子态密度,计算得出Td场和C3V场下Cu2+ d轨道的分裂情况。

The electronic and optical properties of blende phase ZnS systems doped with 3d transition metal ions were studied by the first-principles method based on density functional theory. The density of state, band structure, and absorption coefficient were calculated.

采用基于密度泛函理论的第一性原理方法对掺杂不同3d过渡金属元素的闪锌型ZnS系统进行了研究。

Band structure, density of states, and optical properties of Zinc blende CdTe have been investigated using the plane-wave ultrasoft pseudopotential technique based on density functional theory.

采用基于密度泛函理论框架下广义梯度近似平面波超软赝势法,计算了闪锌型CdTe的能带结构、态密度和光学性质。

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