瞬时电压
- 与 瞬时电压 相关的网络例句 [注:此内容来源于网络,仅供参考]
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The circuit topology of the differential Forward DC-DC converter mode inverter with high frequency link was proposed. Circuit topology, transient voltage control strategy, steady principle characteristic and design criteria for the key circuit parameters were deeply investigated.
提出差动正激直流变换器型高频环节逆变器电路拓扑,并对该变换器的电路拓扑、瞬时电压控制策略、稳态原理特性、关键电路参数设计准则等进行了深入地分析研究。
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In electronics, the product of an instanta neous voltage and the correspondent instantaneous current.
在电子学[技术]中,瞬时电压及其相应的瞬时电流的乘积。
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The pulse train is predetermined to maintain the instantaneous voltage at the system bus above a predetermined lower limit.
对该脉冲序列预先设定以便保持系统总线的瞬时电压高于预定的下限。
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The instantaneous voltage PID control inverter has advantage on circuit and cost, compared with voltage current dual-loop control inverter.
逆变器瞬时电压PID控制与电压电流双环控制相比,在电路结构、成本等方面更具优越性。
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Oscilloscopes can observe the instantaneous voltage relative to time, display the shape of waveform and measure such parameters as frequency and phase.
示波器、信号源在当今仪器中是最通用的电子仪器,示波器可观察相对于时间的瞬时电压,它可显示波形的形状并可测量频率和相位等参数。
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Based on the needs of system control strategy and the output of the active inverter, a switch function method was adopted to build the average model of switch cycle for the active inverter in order to accurately analyze operation characteristic of active inverter, a feed forward and double loop control strategy is put forward, its double control includes a inductor current inner loop control and instantaneous voltage outer loop control.
中文摘要:为准确分析有源逆变器的运行特点,根据系统控制策略的需要,在考虑了有源逆变器输出的基础上采用开关函数法建立了有源逆变器的开关周期平均模型。提出一种前馈加双环控制的控制策略,它的双环控制包括一个电感电流内环控制和一个瞬时电压外环控制。
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The instantaneous power theory was employed to analyze the instantaneous power of the control winding and the control scheme for the DWIG system with diode bridge load was obtained. The component of the currents on the control-winding flux determines the instantaneous reactive power, and the component on the perpendicular direction of the flux decides the reactive power. The former one influences the DC voltage of the diode bridge on power winding and the latter one influences the DC voltage of the static excitation controller of control windings.
基于瞬时功率理论,推导出按控制绕组磁场定向时控制绕组的瞬时功率,在此基础上分析了带整流桥负载的定子双绕组感应电机发电系统在宽转速运行时的电压调节机理,即:控制绕组电流在控制绕组磁场及其法线上的分量,分别决定着发电系统功率绕组整流桥直流侧电压和控制绕组静止励磁控制器(static excitation controller,SEC)直流侧电压,据此提出宽转速运行时DWIG发电系统电压控制策略。
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A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.
二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究,编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系,计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等,对评估MOS型集成电路电离损伤和加固方法研究,以及论文中开展的MOSFETs无损筛选方法研究奠定了基础;分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性,利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流,在不同栅氧厚度下随栅压的变化曲线,计算了热载流子效应造成的阈值电压漂移,研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想,具有重要的参考价值;开展了PN结和双极晶体管电离光电流研究,计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应,计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应,以及基区宽度对NPN晶体管光电流的影响,研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义;在国内首次开展了器件位移损伤的理论研究,分析了辐射产生的缺陷对电性能的影响,计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。
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Whole-cellpatch-clamp technology demonstrated that VDPG (1g/L) had notsignificant effects on the delayed-rectified K~+ current, TTX-sensitive Na~+ current and high-voltage-activated Ca~(2+) current of rat dorsalroot ganglion cells. The fast transiet K~+ current of cottonbollworm dorsal DUM cells, the fast transiet K~+ current, Na~+ current andhigh-voltage-activated Ca~(2+) current of Periplaneta Americana dorsalunpaired median cells were also not significantly affected byVDPG at the same concentration. However, VDPG had significant effecton the fast transiet K~+ current of Pieris rapae. The VES had not significanteffects on the high-voltage-activated and low-voltage-activated Ca~(2+)current of rat DRG cells.
膜片钳电生理实验显示1g/L毒囊粗毒对蜚蠊DUM神经元的快瞬时钾电流、钠电流、高电压激活的钙电流,对棉铃虫快瞬时钾电流和大鼠DRG细胞延迟整流钾电流、TTX-S型钠电流、高电压激活的钙电流均无明显作用,却对菜青虫快瞬时钾电流有明显作用;电刺激粗毒对大鼠DRG细胞低电压和高电压激活的钙通道无明显作用。
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Numerical results show the collisional effects on some physics quantities, such as instantaneous voltages on the electrodes, instantaneous thicknesses of the electron sheathes, spatial distributions of the ion density and the electric field in the sheaths, and instantaneous voltage difference between two electrodes.
数值结果显示了碰撞效应对极板上鞘层的瞬时电压、瞬时电子鞘层厚度、鞘层内的离子密度和动能的空间分布以及两个极板上鞘层电压之差等物理量的影响。
- 推荐网络例句
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They weren't aggressive, but I yelled and threw a rock in their direction to get them off the trail and away from me, just in case.
他们没有侵略性,但我大喊,并在他们的方向扔石头让他们过的线索,远离我,以防万一。
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In slot 2 in your bag put wrapping paper, quantity does not matter in this case.
在你的书包里槽2把包装纸、数量无关紧要。
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Store this product in a sealed, lightproof, dry and cool place.
密封,遮光,置阴凉干燥处。