界面

The results show that alternatively distributed HA and TiO_2 in the bond coat adhere tightly to each other with less microcracks formed. The heat treated HA/(HA+TiO_2) coating is completely crystallized with less and finer opened microcracks on coating surfaces.

但等离子喷涂后，HA涂层的羟基丧失会改变其原有成分、晶格结构和生物活性，引起结晶度降低，以及金瓷界面、种植体骨界面的存在，使HA涂层种植体植入后可能会出现涂层分解、吸收或剥离[4] 。

Some experiments have been done by simulating in-situ hydrate formation system by gas migrating in seepage system in a glass bubble cell.The phenomena in experiments indicate that gas migration can change the quality of mass and heat transfer of the interface between gas and liguid when hydrate is forming,and it's a moving process of equilibrium curve.There wil...

在鼓泡透明玻璃反应釜里模拟渗漏系统气体穿越多孔隙砂层形成水合物的过程实验，分析了气体迁移对气体水合物形成时气液界面的传质传热性质影响，表明实验中气体迁移形成水合物的过程是一种相平衡曲线动态移动的过程；在形成水合物的气—液界面存在具有一定厚度的过渡层，只要过渡层内气体达到饱和即可形成水合物；气体在迁移中不断形成水合物并在孔隙中形成过压，导致地层骨架的力学破裂和失稳；必须建立一个新的水合物相图以适应气体迁移形成水合物过程的这种新特性。

The absolute error of the depth of geothermal reservoir is between 23 m and 50 m, and the relative error of interface of cap rock is less than 6.3%.

在对深部热水储层和盖层岩性界面进行地质解释后，得到热储层赋存深度的绝对误差为23-50 m，盖层岩性界面的相对误差小于6.3%。

By the OM and SEM observation of solidification microstructure, the interfacial reaction between TiAl alloy and Al2O3 crucible was serious, and a large number of α-Al2O3 inclusion formed in the solidification microstructure. The interfacial reaction between TiAl alloy and ZrO2 crucible occurred only on the sample surface, but the crucible was not stable at high temperature and a tack coating was formed, clinging tightly with TiAl alloy. C element in the graphite crucible changed the original solidification path of TiAl alloy, and club-shaped γ-TiAl phases formed.

通过用光学显微镜和扫描电镜对凝固组织观察发现，TiAl合金与氧化铝坩埚之间的界面反应较为严重，在凝固组织中形成了大量氧化铝夹杂；TiAl合金与氧化锆坩埚的界面反应仅发生在试样表面，但该坩埚在高温下不稳定，并在试棒表面形成一层无法剥离的粘结层；石墨坩埚中的C元素改变了原有TiAl合金的凝固路径，生成了棒状的γ-TiAl相。

Moreover, this paper introduces the analysis and design of automation system of the production line at length, including the spot controlling unit, the central controlling unit, hardware and software, communication connecting and electricalcontrol. Also introduces the technique analysis and controlling method design of the raw material preparation, rotating kiln system and coal powder preparation. Describes the system design in detail, such as the main control interface, the system main interface, the system flow diagram, group start and stop, equipments selecting, emergency and fault reset, alarming picture, tendency picture, speed setting, raw material feeding, feeding operation, production reporting table and so on.

接着，论文对该生产线自动控制系统进行了详细地设计分析，包括现场控制部分、中央控制部分、软硬件部分、通讯连接部分和电气控制部分；对生料制备系统、回转窑系统和煤粉制备系统进行了工艺分析和控制方法的设计；并对系统主要控制界面，系统主界面、系统流程图、组起/组停、设备选择、故障复位、故障紧停故障消音、报警画面、阀门操作、趋势画面、转速设定、生料喂料、喂煤操作、原料喂料、生产报表等做了设计介绍。

Comparative study of the bonding strength between the bone and column sample of materials using the pushing out method. The reaction of bone to different implanted materials was studied microscopically.

2兔的骨内柱状体材料植入对比研究，对界面结合强度和界面骨反应分析观察。

For thin polycrystalline films, especially those with columnar structure, once the diameter of grains on the film surface is larger than the film thickness, the total area of above and under basal planes (film-substrate interface) will be larger than that of side plane.

对于薄膜特别是柱状晶薄膜，当晶粒在膜平面内的尺寸大于膜厚时，柱状晶粒的上底面和下底面的面积将大于侧面的面积，因此薄膜中的晶粒生长除像整体材料中的晶粒生长一样考虑晶界能外，还需要考虑表面能和界面能，因为各向异性的表面能和界面能将导致薄膜中的异常晶粒生长和织构变化。

For thin polycrystalline films, especially those with columnar structure, once the diameter of grains on the film surface is larger than the film thickness, the total area of above and under basal planes (film-substrate interface) will be larger than that of side plane. Therefore besides the minimization of boundary energy in traditional bulk material, surface energy, interface energy would be considered due to the anisotropy of surface energy, interface energy being able to drive the grain growth and texture evolution in thin films.

对于薄膜特别是柱状晶薄膜，当晶粒在膜平面内的尺寸大于膜厚时，柱状晶粒的上底面和下底面的面积将大于侧面的面积，因此薄膜中的晶粒生长除像整体材料中的晶粒生长一样考虑晶界能外，还需要考虑表面能和界面能，因为各向异性的表面能和界面能将导致薄膜中的异常晶粒生长和织构变化。

The performances of devices degrade notably when the irradiation dose is larger than these thresholds.(3) The electron-hole pairs in oxides and interface states on Si/SiO〓 induced by radiation, which also can lead the voltage drift of control transistor in pixels, were the chief reason that leads the increase of dark current density in pixels.

3分析认为：辐照在像素的氧化层中诱发的电子—空穴对和Si/SiO〓界面形成的界面态使像素暗电流密度增加；同时也导致转移晶体管的阈值电压漂移，这是造成器件性能退化的主要原因。

We have reported results of the spatially indirect photoluminescence spectra measurements performed on undoped ZnSe/BeTe type-ΙΙ quantum wells with special interface structures at low temperature (5—10 K).

报道了具有特殊界面结构（界面包含三个Zn—Te化学键）的非掺杂ZnSe/BeTe II 型量子阱在低温（5—10 K）条件下的空间间接光致发光光谱的实验结果。

I can not make it blossom and suits me

我不能让树为我开花

When temperatures are above approximately 80 °C discolouration of the raceways or rolling elements is a frequent feature.

当温度高于 80 °C 左右时，滚道或滚动元件褪色是很常见的特征。