电阻温度系数

Then,the influences of the argon pressure,substrate temperature,sputtering power,and the annealing temperature on the temperature coefficient of resistance for the sensor is studied.

结合工艺与测试实验，系统地分析了氩气压强、衬底温度、溅射功率、退火温度等工艺参数对电阻温度系数的影响规律。

In order to solve this problem that the temperature coefficient of the Chromium-film resistance fabricated at first was low, the main factors effecting on temperature coefficient are studied in this paper on the basis of film theory and experiments.

针对初期制备的铬薄膜电阻温度系数较低的问题，根据薄膜理论分析，研究了影响铬薄膜电阻温度系数的主要因素，根据实验结果不断改进铬薄膜电阻制备工艺，最终制作出了基本满足检测要求的热敏电阻薄膜。

By using the relationship that output voltage of unbalanced bridge is in direct proportion to change of working arm resistance,this paper measures the coefficient of resistance temperature of metallic conductor,therefore enriching the contents of physcial experiment.

本文利用非平衡电桥的输出电压与工作臂电阻变化成正比的关系，测出金属导体的电阻温度系数，丰富了物理实验的内容。

The results show that increasing the solids loading of slurry up to 45% allows minimizing deformation of green sheets during drying and sintering process effectively. When the content of monomers in shurry is 2%-4%, and the content of plasticizer in shurry is 3%-6%, green sheets with good strength and flexibility are obtained. The microstructures and the electric characteristics of PTCR chip thermistors were investigated. A five-layer chip PTCR thermistor with room resistance of 0.8Ω, temperature coefficient of resistance of 13.40%/℃, and ratio of maximum to minimum of resistance larger than 10^5 is successfully fabricated.

研究表明：浆料固相体积分数对坯体的乾燥及烧结行为有较大影响，当浆料固相体积分数在45%以上时，可有效避免制品乾燥和烧结过程中收缩过大而产生的变形开裂缺陷；当有机单体的质量分数为2%~4%，丙三醇的体积分数为3%~6%时，可获得有一定强度和柔韧性的生坯；研究了注凝成型PTCR陶瓷的微观结构及陶瓷元件的PTCR性能，成功地制备了层数为5、室温电阻为0.8Ω、电阻温度系数为13.40%/℃、升阻比大於10^5的多层片式PTCR元件。

The smaller bismuth ruthenate partical is, sheet resistivity is lower and temperature coefficient of resistance is more positive and the refiring change ratio is nearer to zero.

铅硼硅玻璃粉体平均粒径对厚膜电阻的性能影响有一极值点，约为1.51μm，在该点处膜层的方阻值最小，电阻温度系数绝对值最小，重烧变化率最接近零值。

A new making process of PTC small sensors is introduced and technological focal points in operations are detailed PTC small sensors (2 mm×2 mm×0 3 mm)with Curie temperature 120 ℃,resistivity at room temperature about 100 ohm·cm, temperature coefficient of resistance above 15%℃-1 ,rate of rise of resistivity ρ max /ρ min above 10 3 and time constant below 2 seconds have been made by use of new technology of isohydraulic formation, chip cut and scratch.

介绍了一种新的微型PTC元件的制造工艺，并对各个工序的技术重点做了详细阐述。作者采用等静压成型和切片、划片新工艺制成2mm×2mm×0.3mm微型PTC元件，其居里温度为120℃，室温电阻率为100Ω·cm，升阻比ρmax／ρmin大于103，电阻温度系数α≥15％℃－1，时间常数小于2s。

Vanadium oxide thin films deposited on slide glass substrates are prepared by facing-target magnetron sputtering.The effect of sputtering conditions on temperature coefficient of resistance is analyzed by orthogonal experiment,and the optimum process recipes are achieved,including Ar∶O2=48∶0.4,gas pressure is 2 Pa,substrate temperature is 27 ℃,sputtering power is 180 W.

利用对靶磁控溅射法在玻璃基片上制备VOx薄膜，采用正交实验方法研究了镀膜条件对VOx薄膜电阻温度系数的影响，得到优化的镀膜工艺参数，主要包括Ar∶O2为48∶0.4、工作压力恒定为2 Pa、基底的温度为室温27℃、溅射功率保持在180W，在此基础上，进行不同温度条件的真空退火，得到薄膜TCR在-2.5%~-4.5%范围。

This paper also make research on the influence of heat treatment technology on the resistance and TCR of different thick film elements including Ag-Pd, bismuth ruthenate and copper ruthenate, and influence of heat deposition technology on the consistency of resistance of the elements.

此外，论文研究了热处理对Ag-Pd、钌酸铋、钌酸铜三种不同材料体系厚膜电阻元件的阻值、电阻温度系数的影响和热存放对电阻元件阻值一致性的影响。

PbO-B_2O_3-SiO_2 glass reacts with bismuth ruthenate and lead ruthenate is produced as transition layer. The transition layer can make the interface gradually change and the properties of resistors are improved at the same time. Based on the study above, the way to get series of pastes was developed.

在上述研究工作的基础上，总结提出Bi_2Ru_2O_7/Ag系厚膜电阻浆料实现阻值系列化的方法：改变功能相中银的百分含量和浆料固相中功能相的百分含量确定电阻膜层的方阻值和电阻温度系数；改变复合无机粘结相中两组元的配比实现厚膜电阻重烧变化率的可控调整，并对方阻值和电阻温度系数进行微调。

One is low valence vanadium oxide thin films were deposited by direct current facing target magnetron sputtering firstly, and then thermal oxidated; the other is high valence vanadium oxide thin films were deposited by ion beam sputtering, then thermal deoxidated. Vanadium oxide thin films with phase transition were obtained at the lower thermal process temperature 300℃, which is compatible with MEMS technologys. The composition of VO_x thin film fabricated by first method includes mainly VO_2, V2O3 and VO_, the TCR is -2.25%/K, the TCR gradually increases with phase transition temperature decreases. The composition of VO_x thin film fabricated by the second method includes mainly VO_2, V2O5 and V2O3 , and the resulting VO_x thin filmTCR is -3.0%/K. The TCR of phase transition vanadium oxide thin films made by second method is higher than that made by first method for the existance of V2O5 in thin films.

分别采用直流对靶磁控溅射制备低价态氧化钒薄膜再附加热氧化处理的方式，和射频离子束溅射制备高价氧化钒薄膜附加热还原处理的方式获得了具有相变特性的氧化钒薄膜，第一种方式获得相变特性氧化钒薄膜的热处理温度最低为300℃，克服了以往高温条件下热处理不能与MEMS工艺兼容的缺点；相变特性氧化钒薄膜的组分以VO_2为主，含有V2O3和VO_，室温TCR为-2.25%/K；室温电阻温度系数随相变温度的降低逐渐升高；采用第二种方式获得的相变氧化钒薄膜的组分以VO_2为主，含有V2O5和V2O3，室温TCR可达-3.0%/K；分析发现，具有相变特性的氧化钒薄膜中含有V2O5时，室温电阻温度系数明显增大。

In the negative and interrogative forms, of course, this is identical to the non-emphatic forms.

。但是，在否定句或疑问句里，这种带有"do"的方法表达的效果却没有什么强调的意思。

Go down on one's knees;kneel down

屈膝跪下。。。下跪祈祷