电阻

Degaussing resistor is a thermistor (四四方方board, with three-pin components), their cold resistance is generally 12 ~ 47 ohm-ohm range, when the city electricity after, the resistance low power was the work of degaussing coil, degaussing coil current larger, making degaussed temperature resistance, resistance increased dramatically, resulting in flow through the degaussing coil current decreases sharply complete degaussing process.

消磁电阻其实是一个热敏电阻（电路板上四四方方的，有三个引脚的元件，），其冷态阻值一般为12欧姆~47欧姆不等，当市电经过时，其阻值较低，消磁线圈得电工作，消磁线圈的工作电流较大，使得消磁电阻的温度升高，阻值急剧增加，致使流过消磁线圈的电流急剧减小，完成消磁过程。

Increased spin disorder and a decrease of with increasing Fe content are evident. It depopulates the hopping electrons and weakens the double exchange. From resistivity and magnetization data, it is expected that the addition of Fe can introduce grain boundaries and form antiferromagnetic clusters.

电阻率的峰值随着Fe的增加而增大，并且峰值对应的温度TIM向低温移动，随着外加磁场的增大电阻下降，产生MR效应，这是因为随着掺杂的增加，自旋无序增加，外场的增加抑制了自旋的扰动，在顺磁温区内，电子自旋形成了随机的磁结构，产生电子局域，破坏了极化子形成的环境，因此输运机制由绝热极化子输运转变为变程跳跃机制。

In the high resistivity area, it is very difficult to reduce the earthing resistance to the given value.

在高电阻率地域，将接地电阻降到设计值非常困难。

Definitions such as that of ohm,"a unit of electrical resistance equal to that of a conductor in which a current of one ampere is produced by a potential of one volt across its terminals," take on more human connotations when we think of how human contributions to the study of electricity are memorialized in them.

定义诸如欧姆，&电阻单位，等于一伏特电压加于导体两端在导体内部产生一安培电流之导体电阻&，当我们想到人们对电学做出的贡献是怎样在这之中得到纪念的时候，就带上了更多的人文内涵。

Definitions such as that of ohm,"a unit of electrical resistance equal to that of a conductor in which a current of one ampere is produced by a potential of one volt across its terminals," take on more human connotations when wethink of how human contributions to the study of electricity are memorialized in them.

定义诸如欧姆，&电阻单位，等于一伏特电压加于导体两端在导体内部产生一安培电流之导体电阻&，当我们想到人们对电学做出的贡献是怎样在这之中得到纪念的时候，就带上了更多的人文内涵。

But so far as the doped quantity of MoOs less than 5%, the abrupt electrical resistance change of the doped film still can reach 2 orders of magnitude, and commonly cant affect its application, so it is hopeful that temperature of the abrupt electrical resistance change can be reduced to room temperature scope.

不过只要MoO3掺杂量不高于5％时，掺杂薄膜的电阻突变仍可保持2个量级以上，一般不影响其使用功能，因此有望使电阻突变温度降至室温范围。

The control system includes the 89C51single chip microprocessor and Circuits of restituting position,circuits of exportation and importation, Circuits of translation code, transmission and induction system of temperature, the interface of coefficient, circuits of showing, stashing equipment and circuits of interface.

介绍了电阻炉的工作原理及常规测温的方法；介绍了PC机在温度控制中对数据的采集、处理的相关知识；分析了系统的软、硬件结构及工作原理；基于单片机控制的电阻炉温度控制系统是一种智能型控制系统。

We have observed a large positive magnetoresistance in the low magnetic field range, but saturating in high magnetic fields.

在低磁场范围内观察到正磁电阻效应，在高磁场下这一正磁电阻趋于饱和，分析表明这一现象与二维电子气中的电子占据两个子带有关。

RESULTS:The transendothelial electrical resistance of microvessels superfused with artificial cerebrospinal fluid was about 2 500 Ω*cm2, indicating a tight barrier with extremely low ion permeability, and application of 10-4 mol*L-1 histamine in superfusate caused a rapid and reversible decrease of resistance.

结果：脑软膜微血管经灌流人工脑脊液，测得的跨内皮电阻大约为2 500 Ω*cm2，说明微血管内皮是具有较低通透性的致密屏障，在人工脑脊液中加入10-4 mol*L-1组胺引起跨内皮电阻快速的和可逆性的下降。

Result: The transendothelial electrical resistance of microvessels superfused with artificial cerebrospinal fluid was about 2500 Ω·cm2, indicating a tight barrier with extremely low ion permeability, and application of 10-4 mol·L-1 histamine in superfusate caused a rapid and reversible decrease in transendothelial electrical resistance.

结果 ：脑软膜微血管经灌流人工脑脊液，测得的跨内皮电阻大约为 2500Ω·cm2 ，说明微血管内皮是具有较低通透性的致密屏障，在人工脑脊液中加入 10-4 mol·L-1组胺引起跨内皮电阻快速的和可逆性的下降。

And Pharaoh spoke to Joseph, saying, Your father and your brothers have come to you.

47：5 法老对约瑟说，你父亲和你弟兄们到你这里来了。

Additionally, the approximate flattening of surface strip using lines linking midpoints on perpendicular lines between geodesic curves and the unconditional extreme value method are discussed.

提出了用测地线方程、曲面上两点间短程线来计算膜结构曲面测地线的方法，同时，采用测地线间垂线的中点连线和用无约束极值法进行空间条状曲面近似展开的分析。