电蚀刻

Moreover, the micro-pattern etching of electrodes and PZT thin films have been investigated, and the fast and successful etchings have been actualized with new etchants and original methods. The technics and mechanism of anisotropic etching of monocrystalline silicon have been studied deeply, for example the influences of the concentration and temperature of tetramethyl ammonium hydroxide on the rate and effect of the anisotropic etching.

此外，结合PZT铁电薄膜热释电单元红外探测器的设计和制备，对电极和PZT铁电薄膜的微图形刻蚀工艺进行了研究，采用新的刻蚀液配方和具有独创性的方法，实现了对PZT铁电薄膜和上下电极快速、成功的刻蚀。

H. Koyanagi."Novel High Density, Stacked Capacitor MOS RAM",IEDM Tech..1978,348-351.[5]H. Arima."A Novel Stacked Capacitor Cell with Dual Cell Plate for 64Mb DRAMs",IEDM Tech.

堆迭电容器DRAM在1Gb 以上必须使用的新介电材料，会迁动一连串新设备的开发，包括蚀刻、清洗、及沉积设备。

The etching was stopped due to electroosmosis effect when electroconductivity of the etching membrane occurred, and over etching was automatically avoided.

当刻蚀达到电通透时，在电渗流的作用下刻蚀自动停止，从而避免了过刻蚀。

Resistance pure water system, 3-waste treatment system, and shock-proof working-table, and about 80 sets of micro-electrical-mechanical technical equipment are installed, including AMS200 ICP plasma etching system, ICP-2B etching machine, AWB04 bonding machine, MA6/BA6 Karlsus double-face photolithography machine/bonding machine, POLI-400 chemical-mechanical-polishing tool, WL2040 aluminum-wire press welder, OPTI CAOT 22i decktop precision spin coasting system, ZSH406 automatic dicing saw system, DQ-500 plasma photoresist-removing machine, HXS150S automatic centrifugal spinner, AXTRON MOCVD metal organic chemical vapor deposit system, 4470 micro-control 4-tube diffusing furnace, type 4371 LPCVD low pressure chemical vapor deposit system, OMICRON MBE molecular beam epitaxy system, JS-3X100B magnet-control spattering equipment, PECVD-2E plasma deposit apparatus, ZZSX500C electron-beam vapor equipment, JC500-3/D magnet-control spattering-coating machine, H63-14/ZM quartz-tube cleaning machine. Measurement instruments include OLS1100 Confocal Laser Scanning Microscope, DEKTAKIII Surface Profiler, D41-11A/ZN 4-probe resistance test instrument, Nikon L150 metallurgical microscope, and so on.

中心现有80多台各种微机电工艺设备，如AMS 200深硅等离子体刻蚀系统、ICP-2B刻蚀机、AWB04键合机、MA6/BA6 Karlsuss双面光刻机和键合机、POLI-400化学机械抛光机、WL2040铝丝压焊机、OPTI CAOT 22i喷涂胶机系统、ZSH406全自动划片机、DQ-500等离子去胶机、全自动清洗甩干机、AXTRON MOCVD金属有机物化学气相沉积系统、4470微控四管扩散炉、4371LPCVD低压化学沉积系统、OMICRON分子束外延系统、JS-3X100B磁控溅射台、PECVD-2E等离子淀积台、ZZSX500C电子束蒸发台、JC500-3/D磁控溅射镀膜机、石英管清洗机，以及多种常用测试仪器，如OLS1100激光共聚焦显微镜、DEKTAK-III台阶测量仪、D41-11A/ZN四探针电阻测试仪、Nikon L150金相显微镜等。

To make such a font, which is 8 "" design process, starting with the entire electrical conduction-shares field knives, hallyo-acidproof gold、silver "" 8 only on font style parts screen business card printing and membership card, and then use the acid etching, besidesyour is not business card printing and membership card making part of the transmission unit.

制作这种"8"字型图案的工艺，首先是在带有整个电传导股的场璃上，闲耐酸性油墨仅对"8"字形部分进行丝网制卡和会员卡制作，然后用酸蚀刻，除去未被制卡和会员卡制作部分的传导股。

We present a simple method to functionalize the surface and to modify the structures of multi-walled carbon nanotube grown on silicon substrates using argon plasma. The as-grown CNT films prepared by thermal chemical vapor deposition were treated with Ar plasma.

在此研究中使用非反应性的Ar电浆子蚀刻，处藉由热化学气相沉积法在矽基板表面所积的多层米碳管，并观察处过后的米碳管表面型态与结构上的改变及其对场发射特性的影响。

After the rest of the components are built up layer by layer, the mesh is excavated from the strata, and once it is exposed, a gas plasma etches the silicon substrate under it, creating a cavity that allows the now released structure to vibrate freely.

在其他元件一层层制造完成之后，便将线路从该层挖出来，镂空后，再以气体电浆在底下的矽基板上蚀刻出空洞，让元件可以自由地振动。

These etchings form the paths that electricity follows in the chip.

这些蚀刻版画形成路径电在薄片中跟随。

Some new processes and technologies for electronics finishing were introduced, such as wafer plating, electrochemical mechanical polishing, microelectro-mechanical system plating, copper plating using insoluble anode, platinized niobium electrode, lead and cadmium free eleclroless nickel, recycling of alkaline etching solution and reclaiming system of copper.

介绍了电子电镀中的若干新工艺新技术，如芯片电镀、电化学机械研磨、微机电系统电镀、不溶性阳极电镀铜、镀铂铌电极以及无铅无镉中磷光亮化学镀镍、碱性蚀刻液再生和铜回收系统等。

The structure of the thin film capacitor 1 of this invention is: form sequentially at least the bottom electrode layer 102, the high dielectrics constant oxide film 103 and the upper electrode layer 105 on the semiconductor substrate 101; said upper electrode layer 105 which is a film layer 104 formed by the electrical conductive material which is processable by reactive ion etching, or a multilayered film composed of two kinds of film layers 107 and 108, which are each formed of a conductive material which is processable by at least two kinds of reactive ion etching.

要约 薄膜电容器1是至少在半导体基片101上按顺序形成下部电极层102、高介电常数氧化物膜层103、上部电极层105而构成的薄膜电容器，该上部电极层105由一种仅由可用反应性离子刻蚀加工的导电性材料形成的膜层104，或至少两种由可用反应性离子刻蚀加工的导电性材料分别形成层状的多层膜层107和108构成；经历350℃的热试验之后，对该薄膜电容器1施加OV到2V的驱动电压的薄膜电容器漏电电流密度为1×10 －8 A/cm 2 以下。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。