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电荷密度

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The bond length, density of states and population of TiO2 with oxygen vacancy and titanium vacancy have also been analyzed in this paper.

本文还计算了金红石相TiO2在具有氧空位和钛空位点缺陷情况下的键长变化、态密度和电荷布居状况。

Using the density matrix of the canonical ensemble,we have deduced the formulate of the quantum fluctuations of both charge and current in a non-dissipative mesoscopic coupled circuit.

根据正则系综的密度矩阵导出耦合互感电路中电荷和电流的量子涨落,得到了量子涨落与温度的依赖关系。

This is explained by the formation of high density charge on both sides of the high energy side interface.

这个行为被解释为相应异质界面两侧已形成电荷高密度并导致费米能端异常现象的产生。

In order to explore the nature of these phenomena we studied the electronic structures of the two organic molecules using the Density Function Theory.

为了探索这种现象的本质,我们用密度泛函方法计算了两个有机分子的电子结构及前线轨道上的电荷分布。

The available tunneling depth of channel carriers is dependent of frequency. Hence traps density in opposition to dielectric depth is extracted by charge pumping current and frequency.

通道电子能穿隧的深度会随著不同操作频率而改变,因此可由电荷帮浦电流对应到频率便能得知在闸极介电层中不同深度的缺陷密度。

Since most of the large molecules containing phosphorus element have double bonds, it is necessary to consider the special structures of double bonds in order to deal with these large systems more accurately. So, based on density functional theory and electronegativity equalization principle, applying a general atom-bond electronegativity equalization method , using separated program, through regression and least-squares optimization , the parameters of atoms and bonds in molecules are determined . By these parameters , the charge distributions and the energy of some molecules containing phosphorus element, especial the fragment of DNA, RNA, are calculated . The results are quite good.

由于这些含磷生物大分子体系都含有双键,为了明确的处理双键,进而更准确的解释带有双键和共轭双键的含磷生物大分子结构与性质的关系,我们以密度泛函理论~([1-4])和电负性均衡原理~([5-9])为基础,应用和开发原子-键电负性均衡方法中的σπ模型,利用最小二乘法,拟合确定了一些分子(含碳、氮、氧、氢以及磷等原子)的各种类型原子及化学键区域的参数,并利用上述参数计算了一些多聚核苷酸的电荷分布以及分子的总能量,进行了讨论,得到的结果可以和从头算相媲美。

On the other hand, the electrical properties of MOSFETs such as IDS-VDS and IGS-VGS were investigated. The interface quality of high-κ thin films and substrate interface was investigated through subthreshold swing, gated-diode character-istics, and charge pumping methods. After analysis, some important parameters, such as the density of interface trap per area, effective capture cross section, and the surface recombination velocity (s0), were extracted.

对於金氧半电晶体的电气特性研究包含:IDS-VDS和IGS-VGS,并利用次临界摆幅、闸二极体(gated-diode)与电荷汲引法来研究高介电系数薄膜和矽之间的界面特性,经由分析可得界面缺陷密度、界面缺陷等效捕获截面积及载子表面复合速率(s0)等等的重要参数。

There are positive charge and negative charge, but the energy density of electric field is all positive, as a result, the integral electromagnetic energy is always positive, electromagnetic mass is always a positive value.

电荷分为正负,但电场的能量密度却总是正的,所以积分得到的电磁能量总是正的,因而电磁质量也总是一个正值。

Theoretical predict is given, that electron density of inner shell at nuclear surface decreases and energy level also decreases with increasing of charge state, nuclear lifetime increases slightly with previous reason but increases with a jump when energy level drops to a critical value.

理论预言了随着电荷态的增加,内壳的电子在核表面的电子密度降低,内壳电子能级也降低,不稳定原子核的寿命由于前一原因而缓慢增加,但当内壳电子能级降到特殊能量时产生剧烈增加。

The binding energy of reactants and products was determined by X-ray spectrography, the ground level charge distribution of products was caculated by density function theory of quantum chemistry.

采用X-射线光谱仪测定反应物及反应产物的结合能,用量子化学密度泛函理论计算各反应产物的基态电荷分布情况。

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这两个团体间的分歧难以掩饰。

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