电离辐射

Ionizing radiation-induced color change combined with chrominance technique may provide a new convenient method for studying radiation absorbed dose.

将电离辐射变色现象与色度分析技术结合，可能提供一种新的剂量学研究方法对辐射变色物质进行更方便的研究。

The effects of ionizing radiation and transient high dose rate radiation of the power VDMNOSFET are also presented.

给出了该器件的电离辐射效应及瞬态大剂量辐射的实验数据，与常规 VDMOSFET相比获得了良好的抗辐射性能。

PTEN gene expression has relation to the dose of gamma ray.

提示PTEN基因与低剂量电离辐射生物学效应及电离辐射旁效应的发生存在非常密切关系。

It has been treated with ionizing radiation or ionization energy

经过电离辐射或者电离能量处理过的

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Non-ionising radiation is safe, but ionising radiation is potentially harmful.

非电离辐射是安全的，但电离辐射是潜在有害的。

Non-ionising radiation is found in the environment in sunlight, power-lines, electrical equipment and mobile phone systems which do not have enough energy to produce harmful ionising radiation.

非电离辐射被发现在该环境中的阳光，电源线，电气设备和移动电话系统，没有足够的能源产生有害的电离辐射。

Devices intended to emit ionising radiation must be designed and manufactured in such a way as to ensure that, where practicable, the quantity, geometry and quality of radiation emitted can be varied and controlled taking into account the intended use.

11.5 电离辐射释放电离辐射的装置的设计及制造再可行时应基于装置的目的确保释放出辐射的数量。几何性质及质量可以被改变和控制。

Ionizing radiation ; natural radiation ; man\|m ade environmental radiation ; public ; environment ; radiation protection

北京大学物理学院技术物理系；物理， Physics ，编辑部邮箱 2003年 09期电离辐射；天然辐射；人工辐射；公众；环境；辐射防护

The study on themechanisums has been a hotspot of biology and radiobiology.

值得关注的是，自从国外学者提出电离辐射旁效应概念以来，许多研究者证实旁效应的存在，对&照射细胞核才会引起细胞致命的损伤&&只有受照射细胞才受到损伤&等某些传统观念提出了有力的挑战，辐射诱导的基因不稳定性、细胞质受到照射所致的突变及旁效应等在辐射致癌中同样具有重要作用，并得到放射生物学界的确认。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。