电离电压

The capillary temperature and ionization voltage were maintained at 230℃ and 2.5 kV, respectively.

毛细管温度和电离电压保持在230℃和250千伏，分别。

The carbon molecules combine to form an equilateral triangle, the most ideal and stable type of structure.

这电离罩是利用高电压使碳分子电离化，再用分子工程技术加压降温，重整碳晶体的结构。

The MS was equipped with an ESI interface operating at an ionization voltage of +5500 V and a source temperature of 400 8C.

该MS是配备了电喷雾接口经营处于电离电压为5500 V和A 源温度400 8C条。

There is a conductive brushlelss use of molecular electrostatic voltage air ionization, this high voltage electrostatic high General produced from fast-moving under the pressure of implantated, as in a fast-moving of squeege inverterbral, Polyester mesh surface there static electricity voltage.

有一种导电刷利用已有的静电电压使空气分子电离，这种高静电电压一般产生于在高压力下快速移动的材料表面，如在高速运动的刮板压力下，聚酯丝网表面就会存在静电电压。

The triple quadrupole mass spectrometer with the turbo ion spray interface was operated in the positive ion mode and the temperature of the turbo was set at 105℃ and the ionization voltage was 3300V. The multireaction monitoring mode was employed to scan the ions.

三重四极杆质谱采用正离子模式，离子采集方式为多反应监测模式，离子源温度105℃，离子源电离电压为3300V，雾化气流速500L/h。

MS parameter: ion source: ESI; 50～800 m/z; ionization voltage: 3.0 kV; dry gas (N2) flow rate: 318 L/h; temp:150 ℃; emale cone voltage: 3.0 kV.

质谱条件：离子源：ESI；检出模式：正负离子二种形式；扫描范围：50～800m/z；电离电压：3.0kV；电喷雾接口干燥气(N2)流速318L/h；离子源温度150℃；锥孔电压30V。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

The influence of the injector temperature and the interface temperature are unconspicuous.

结果：升温程序、电离电压、柱前压与流速等对特征指纹图谱的影响较大，而离子源温度、进样口温度的影响较小。

When a voltage higher than the design voltage strikes the line, the gas ionizes and conducts the excess voltage to ground.

当高于设计电压的外部电压击中电线，玻璃胶囊中的气体将被电离并形成导体，将过高的电压导入地下。

Now most of plasma arc cutting machine by gas pressure to control flow, because when the gun aperture amount of time, the control of the gas pressure there is control of the flow.

等离子弧切割机通常有较高的空载电压和工作电压，在使用电离能高的气体如氮气、氢气或空气时，稳定等离子弧所需的电压会更高。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。