电流增益

In comparison with the switches based on other polytypes of SiC, the design benefits from having fewer lattice mismatches between the SiCGe and 3C-SiC. A maximum common emitter current gain of about 890 and superb light-activation characteristics may be achievable. The performance simulation demonstrates that the device has a good I-V characteristic with a turn-on voltage knee of about 4V.

结果表明，与采用其他结晶类型的碳化硅衬底相比，SiCGe与3C-SiC间较小的晶格失配有利于提高器件性能，可使其最大共射极电流增益达到890，获得最好的光触发特性和较好的I-V特性，饱和压降大约为4V。

It has one set of RCA input, one set of RCA output, one headphone output, making use of our new technology in "current amplification".

它有一组RCA输入，一组RCA输出，一组耳机输出，应用了我们最新的电流增益技术。

Based on this model, the electron transit time, the current gain and the cutoff frequency are calculated.

并在此模型基础上对电子在基区中的渡越时间、HBT的电流增益和截止频率等进行了计算。

For logic devices, the incremental current gain is very important.

对于逻辑器件来说，提高电流增益是非常重要的。

And then the measures to improve the low temperature current gain of PET are brought out.

从解析和数值角度分析和讨论了影响多晶硅发射极晶体管低温电流增益及其温度关系的各主要因素并提出了改善多晶硅发射极晶体管低温电流增益的思路。

Features: High current, low saturation voltage, low on resistance, high hFE .

特征：大电流，饱和压降低，输入阻抗低，直流电流增益高。

The effects of temperature on the Early voltage and the current gain of the 4H-SiC BJT are investigated.

通过考虑缓变基区4H-SiC BJT电流增益及器件内4种载流子复合过程，计算了4H-SiC BJT的厄利电压，分析了Early电压及电流增益的温度特性。

The preamplifier provides voltage gain (about: 10millivolts to 1volt) but no significant current gain.

前置放大器提供电压增益(大概10毫瓦到1瓦)，但没有显著的电流增益。

The unity current gain frequency fT of a BJT is related to the collector current IC by Equation (2) predicts that the fT would rise unrestrictedly with a rising IC.

一个双机型晶体管的单位电流增益fT和集电极电流IC的关系表达为等式(2)，该等式预测在IC上升时fT会无限上升。

Since Al〓Ga〓In〓P possesses larger valence band difference to GaAs and wider energy gap, minor carrier reverse injection from base and space charge region recombination in the emitter are effectively suppressed in Al〓Ga〓 In〓P/GaAs HBT. Under most circumstances, quasi-neutral base recombination current dominates the base current, and its ratio to collector current varies little with collector current and temperature, thus greatly stabilizes the current gain.

Al〓Ga〓〓In〓P/GaAs HBT由于异质结的△Ev较大，发射区禁带较宽，有力地抑制了基区少子反向注入流和发射区空间电荷区复合电流；在大多数情况下，基极电流以准中性基区复合电流为主，其与集电极电流的比值随集电极电流和温度的变化极小，稳定了电流增益。

The absorption and distribution of chromium were studied in ryeusing nutrient culture technique and pot experiment.

采用不同浓度K2CrO4(0，0.4，0.8和1.2 mmol/L)的Hoagland营养液处理黑麦幼苗，测定铬在黑麦体内的亚细胞分布、铬化学形态及不同部位的积累。

By analyzing theory foundation of mathematical morphology in the digital image processing, researching morphology arithmetic of the binary Image, discussing two basic forms for the least structure element: dilation and erosion.

通过分析数学形态学在图像中的理论基础，研究二值图像的形态分析算法，探讨最小结构元素的两种基本形态：膨胀和腐蚀；分析了数学形态学复杂算法的基本原理，把数学形态学的部分并行处理理念引入到家实际应用中。