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The feedback resistance, R1, is dependent on cell sensitivity and should be chosen for either maximum dynamic range or for a desired scale factor. R2 is elective: in the case of photovoltaic cells or of photodiodes, it is not required in the case of photoconductive cells, it should be chosen to minimize bias current error over the operating range.

反馈电阻R1的取值由电池的灵敏度和要求的最大动态范围,或者需要的电流——电压转换比例决定。R2分情况选取:在光电池和光电二极管时不需要这个电阻,在光电导的时候,电阻的阻值应该能使在工作范围内,由OP输入偏置电流所带来的误差最小。

When the voltage on the feedback resistance over the designed value, the inside protection circuit was operated and the output channels were cut in IR2132 to achieve current protection.

电流在反馈电阻上产生的电压超出设定值时,IR2132启动内部保护电路,关断输出通道,实现电流保护。

A control circuit is connected to the field effect transistor and provides a current through a control current path to produce the field effect transistor input voltage.

控制电路连接到场效应晶体管并提供通过控制电流路径的电流以产生场效应晶体管输入电压。

The change and development of LC is one of the main decisive factors of flashover.

覆冰与污秽绝缘子串的闪络均是由泄漏电流引起的,泄漏电流的变化与发展是决定闪络的主要因素之一。

Normal working hours, B2-B1 between the need to add a positive voltage, E-B1 between the PN junction forward biased if the Canadian single-junction transistors that turn, after turn-on, E-B1 between the resistance will soon be reduced, to B2-B1 between the current rapid increase in current increase, so that the resistance between the E-B1 further reduced, so the formation of a strong positive feedback.

正常工作时,B2—B1间需加正电压,E—B1间的 PN结若加正向偏置,单结晶体管即导通,导通后,E—B1间的电阻会很快降低,使B2—B1间的电流迅速增加,电流的增加,又使E—B1间的电阻更进一步的减小,如此形成了强烈的正反馈。

The I-V characteristics of the diodes with 100μm diameter indicated that as the densities of V-defects on GaN films increased from 4.1×105cm-2 to 1.03×107cm-2, the Schottky barrier height decreased from 1.44eV to 1.19eV and the reverse bias leakage current at -1V is increased sharply from 10-10A to 10-7A . Further studies on a single V-defect using conductive atomic force microscope demonstrated that the value of forward current biased at 8V at V-defect side-walls appears to be one order higher than that of plain region, indicating that the conductivity mainly occurred at the side-walls of V-defect.

实验结果发现,随著V型缺陷密度由4.1×105cm-2增加至1.03×107cm-2,在氮化镓表面蒸镀镍金属所制成直径为100μm的萧基元件之所属能障从1.44eV下降至1.19eV,而且在-1V的操作下反向偏压漏电流从10-10A急遽的攀升至10-7A;为了了解V型缺陷对厘米尺寸n-GaN萧基元件电流传导机制之影响,我们进一步的利用导电原子力显微镜(Conductive Atomic Force Microscopy, C-AFM),特别针对单一个V型缺陷进行微观电性之量测。

Accordingly, a higher forward current and a much improvement on drain saturation current could be achieved.

因此,较高的顺偏电流和较好的汲极饱和电流可以被达成。

When the beam current is below free-running start oscillation current, the results of the nonlinear simulation are consistent with the results of the amplifier's linear theory.

本论文所探讨均匀与非均匀半径结构的磁旋返波管,模拟结果显示操作电流低於自由起振电流非线性分析结果符合放大器线性理论,属於amplifier的操作区段。

In use, a coil 92 is connected to the output terminal 16, and driven in an energise mode in which current in the coil 92 is built up as indicated by arrow 100, a freewheel mode in which current circulates freely as indicated by arrow 102, and then may be switched off.

使用中,线圈92与输出端16相连,并且在激励模式和空转模式中被驱动,其中在所述激励模式中,线圈92中电流沿箭头100的指示建立;在所述空转模式,电流沿箭头102指示的方向自由循环,然后切换到关断。

This paper introduced the electric current sensor principle of work and voltage pick-up each kind of parameter, elaborated hands over - hands over the frequency changer the principle of work, has made the simple description to its output current voltage waveform, in addition, this article logarithm has also given quite detailed showing according to the gathering technology.

本次论文介绍了电流传感器的工作原理及电压传感器的各种参数,阐述了交-交变频器的工作原理,对其输出电流电压波形做了简单的描绘,此外,本文对数据采集技术也作了比较详细的说明。

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Deepwater Taranaki is investigated for its petroleum potential, using all available seismic data tied to shallow-water wells.

运用与浅水井相关的现有全部震波探测数据考察了深海区塔拉纳基盆地的油藏前景。

If you're huffing and puffing at any point during the run, slow down and make sure you can take deep breathes.

如果你任何时候在跑步过程中气喘如牛,降低速度并且确保你能够深呼吸。