电子漂移

Some factors are introduced,including the effects of temperature on transverse effective electric field and surface roughness scattering,the dependence of the saturation drift velocity of the electron on transverse effective electric field and temperature,and an improved interface trapped charge and fixed oxide charge coulomb scattering model.

在新模型中，引入了横向有效电场和表面粗糙散射的温度依赖性，电子饱和漂移速度与横向有效电场和温度的关系，以及改进的界面陷阱电荷和固定氧化物电荷库仑散射模型等因素。

Single probe ; Parallel Mach probe ; Mach number ; Plasma drift velocity ; Electron temperature ; Ion density

单探针；平行马赫探针；马赫数；等离子体漂移速度；电子温度；离子密度

Silicon carbide is a promising semiconductor with wide band-gap, highsaturation electron drift velocity, high thermal conductivity and high breakdownelectric field.

碳化硅是一种具有宽禁带、高电子饱和漂移速度、高的热导率以及高的临界击穿电场等优异特性的新型半导体材料。

Theresults show that the electron mean drift velocity is affected by the cathode radius, theimpedance of the load diode, the inner radius of vanes and the input voltage.

结果表明电子平均漂移速度决定于阴极杆半径、负载二极管阻抗、阳极慢波叶片内径和输入电压。

The transport and current-voltage properties of submicron GaAs MESFET device are calculated firstly based on the nonparabolic effective mass energy band model and Monte Carlo method which includes all major scattering mechanisms. The electron drift velocity, electric field and the non-homogeneity of mobility distribution in device are obtained. The influences of different gate lengths to electron drift velocity and drain current are analyzed.

根据对以GaAs、GaP和InP为主的Ⅲ-V族化合物半导体材料的能带结构和散射机制的分析，采用蒙特卡罗模拟方法，研究了亚微米尺寸的OaAs MESFET器件的电子密度分布、电场强度、漂移速度和迁移率分布等输运性质，以及栅长对器件性质的影响和电流电压特性。

In addition, electron gets the transversal drift velocity and meanwhile causes an additional temperature rise in this crossing field produced by space charge field and longitudinal solenoid field.

标 签 电子冷却空间电荷冷却效率漂移速度温升 Electron cooler Space charge Cooling efficiency Transversal drift velocity Temperature rise

Electronic integrator, integration drifting, integration time constant, magnetic flux, operational amplifier, integration compensation

电子积分器；积分漂移；积分时间常数；磁通；运算放大器；积分补偿

This paper discussed working principle of the ideal electronic integrator which was constituted of operational amplifier. Integral drift parameter and integral time constant as main factors influencing the accuracy of integral output were analyzed.

摘 要：讨论了由运算放大器构成的理想电子积分器的工作原理，分析了积分漂移、积分时间常数等主要因素对积分输出误差的影响及改善措施。

These cases may indicate that the separatrix frequency region of bidirectional electron beams are within a large braodband from 250 to 2900 MHz and the originating ranges are in a very small (4 to 100 MHz) and different bands.

介绍云南和北京天文台射电频谱仪观测到的3个对偶的米波--微波Ⅲ型爆发，估计了双向电子束起源的频率和高度，3个事件分别揭示了在正向和反向漂移爆发之间的分界频率(约为250，1300和2900 MHz)，它们指出了一个致密的电子加速源，在这个源中产生了向上和向下两个方向注入的电子束，从这些事例可以表明不同事件的双向电子束的分界频率有一个相当大的范围(250-2900 MHz)，而它们的起源范围却是在一个很小的(大约4-100 MHz)和不同的频段范围内。

The performances of devices degrade notably when the irradiation dose is larger than these thresholds.(3) The electron-hole pairs in oxides and interface states on Si/SiO〓 induced by radiation, which also can lead the voltage drift of control transistor in pixels, were the chief reason that leads the increase of dark current density in pixels.

3分析认为：辐照在像素的氧化层中诱发的电子—空穴对和Si/SiO〓界面形成的界面态使像素暗电流密度增加；同时也导致转移晶体管的阈值电压漂移，这是造成器件性能退化的主要原因。

The labia have now been sutured together almost completely.The drains and the Foley catheter come out at the top.

此刻阴唇已经几乎完全的缝在一起了，排除多余淤血体液的管子和Foley导管从顶端冒出来。

To get the business done, I suggest we split the difference in price.

为了做成这笔生意，我建议我们在价格上大家各让一半。