电场强度

The finite element method is applied to calculate electric field intensity of ultrahigh voltage compact transmission lines.

将有限元方法应用于特高压紧凑型输电线路电场强度的计算。

The influences of the electric field intensity, electrophoretic duration, and additive concentration on the quality of the coating were studied.

研究了电场强度，电泳时间，添加剂用量对涂层品质的影响。

The effects of spinning voltage,vertical distance,electric field intensity and other electrospinning parameters were investigated.

研究了纺丝电压、纺丝高度、电场强度等参数对PA6/MWNTs纳米纤维纱的结构与性能的影响。

The field observations show that the electric field intensity and polarity take on great differences between sunny days and sandstorm.

不同的沙尘天气过程形成的电极性和电场强度也有较大差别。

The results of computation show that the relative variational rate of the volume and shape of particles is in direct proportion to the square of electric field intensity, and relates to the character of ER.

研究结果表明：悬浮颗粒的体积和形状的相对变化率均与电场强度的平方成正比，并与 ER 本身的性质有关。

The experimental study on the electrokinetic remediation of phenol-polluted sand soil was performed at the laboratory.

探讨了苯酚污染砂土电动力学修复的可行性及在不同电场强度下苯酚的迁移特征和机制。

Silicon carbide is a promising semiconductor with wide band-gap, high saturation electron drift velocity, high breakdown electric field and high thermal conductivity.

碳化硅是一种新型半导体材料，具有禁带宽、电子饱和迁移速度高、击穿电场强度高、热导率高等特点。

Secondly, the spatial distribution of transport properties of GaP and InP bulks, including electric fields, drift velocities and mobility, are calculated at different applied voltages and an overshoot phenomena in the electron densities and drift velocities of the GaP and InP bulks under the high electric field was found.

同时计算了GaP和InP体材料输运性质，分析了它们的电场强度、漂移速度和迁移率在不同偏置电压下的空间分布，以及电子密度和漂移速度在高电场下的过冲现象。

The transport and current-voltage properties of submicron GaAs MESFET device are calculated firstly based on the nonparabolic effective mass energy band model and Monte Carlo method which includes all major scattering mechanisms. The electron drift velocity, electric field and the non-homogeneity of mobility distribution in device are obtained. The influences of different gate lengths to electron drift velocity and drain current are analyzed.

根据对以GaAs、GaP和InP为主的Ⅲ-V族化合物半导体材料的能带结构和散射机制的分析，采用蒙特卡罗模拟方法，研究了亚微米尺寸的OaAs MESFET器件的电子密度分布、电场强度、漂移速度和迁移率分布等输运性质，以及栅长对器件性质的影响和电流电压特性。

By analyzing the excited energies, one finds that the electron transition can not provide ultrashort high-intensity laser pulses.

通过比较不同电场强度下激发能，指出要产生超短波脉冲或实现X射线软化，强激光场中的团簇的高次谐波是一种可能的途径。

With Death guitarist Schuldiner adopting vocal duties, the band made a major impact on the scene.

随着死亡的吉他手Schuldiner接受主唱的职务，乐队在现实中树立了重要的影响。

But he could still end up breakfasting on Swiss-government issue muesli because all six are accused of nicking around 45 million pounds they should have paid to FIFA.

不过他最后仍有可能沦为瑞士政府&议事餐桌&上的一道早餐，因为这所有六个人都被指控把本应支付给国际足联的大约4500万英镑骗了个精光。