电压

Furthermore, the gate is directly sitting on the undoped layer, and it shows larger gate turn-on voltage and broad gate swing.

此外，闸极直接镀於未掺杂层，因此有大的闸极导通电压宽广的闸极电压操作范围。

Two kinds of silicon samples with distinct surface treatment, i. e., one surface was chemically etched and the other was unetched, were used to investigate the characteristics of leakage current and surface flashover of semiconductor under impulse voltage in vacuum. The experimental results showed that the surface conditions of samples affected these characteristics greatly. Before flashover, the Ohmic current was observed for unetched samples and the space charge limited current for etched samples, respectively. Meanwhile both samples showed quite different flashover tracks, and the surface-etched samples displayed a much higher onset voltage of flashover.

对采用和未采用表面化学腐蚀处理的半导体硅在冲击电压下的实验表明（参见 Zhang et al ， Applied Physics Letters， 2002），试品的表面状况对其泄漏电流和沿面闪络特性有着很大的影响：在沿面闪络之前，未经处理试品的泄漏电流表现为 Ohm 性电流，而表面处理过的试品表现为空间电荷限制电流特性；同时两类试品表面的闪络通道也表现出不同的特征，而采用表面化学腐蚀处理可以明显提高其沿面闪络电压。

The input of the equipment can have 0-100% ungraduated continuous control.

设计先进的SCR可控硅调压控制系统，采用高精度的数字触发装置，准确的发出每一个SCR控制脉冲，设备的输入功率能作0～100%的无级连续控制，并有电压自动反馈系统和电流保护系统，保证主回路电压波动≤±1%。

The spacing between uninsulated live parts of different circuits involving different voltages shall be not less than that required for the circuit of the higher voltage.

不同电路中的不同电压下的未加绝缘的带电部件之间的间隔应不小于较高电压电路的间隔要求。

The results show that for unoriented ZnO nanowire thin films, the electric field intensities corresponding to the turn-on voltage and threshold voltage of field emission are 4.7 and 7.6V/μm, which are much lower than those of aligned nanowire arrays.

结果显示，非取向生长的ZnO纳米线薄膜场发射的开启电压和阈值电压所对应的场强分别为4.7和7.6V/μm，场增强因子达10^3量级，具有较阵列生长的ZnO纳米线更为优异的场发射能力。

The devices of sandwiched structure were prepared by compounding poly[2-methoxy-5-(2-ethyl-hexyloxy)-l,4-phenylene vinylene] with SiO_2. The thickness of MEH-PPV of these devices are different. We found the suitable frequency of drive voltage to obtain the greatest brightness. The device of cascade structure was prepared based on this work.

采用共轭高分子聚2-甲氧基-5-(2′-乙基-己氧基)-1，4-亚苯基亚乙烯基与SiO_2制成夹层结构器件，研究了不同发光层厚度的器件的发光特性，发现长波峰的发光强度随驱动电压频率的增大而增强、短波峰的发光强度随驱动电压频率的增大而减弱，进一步分析了其机理。

In this experiment, the amount of violative path is been cut down 60%. Reduce the times of the iteration from 8 to 3, may accelerate timing closure. Improving the design of

论文在直流电压降及金属连线电迁移分析的基础上改进电源网络的设计、金属连线的布线，最终消除了芯片中存在的较为严重的电压降。

The new compens ator consists of a three-phase voltage source inverters(to eliminat e negative sequence current and adjust reactive power)and a single-phase voltage source inverters(to eliminate zero seq uence current).

该补 偿器由用于补偿负序分量并调整负荷母线电压的三相电压型逆变器和用于补偿零序分量的单相逆变器组成。

The steady state and dynam ic characteristics of ASVG are analyzed with the help of this model.

通过对仿真结果的分析，得出了 ASVG的输出电压与它和系统接入点电压间的相角差、ASVG晶闸管触发脉冲、触发脉宽之间的关系，这为ASVG的触发脉冲和触发脉宽的设计提供了依据。

Furthermore, monitoring the changes in Raman spectra of the electrochromic films with bleach-coloration states enables the discussion of the mechanism of colouration.

此外，本专题制作的影像显示元件，其操作电压范围在-4V至+4V间，可透过调整驱动电压大小来改变颜色的深浅，提高元件的视觉对比。

I can not make it blossom and suits me

我不能让树为我开花

When temperatures are above approximately 80 °C discolouration of the raceways or rolling elements is a frequent feature.

当温度高于 80 °C 左右时，滚道或滚动元件褪色是很常见的特征。