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If a transformer receives energy at a low voltage and delivers it at a higher voltage ,it is called a step-up transformers.

如果得到能源变压器在低电压,并提供它在更高的电压,这是所谓的升压变压器。

In single stage power factor correction converters, the voltage on the storage capacitor is not controlled, its wide voltage range has detrimental effect on the circuit performance.

中文摘要:在单级功率因数校正变换器中,不能控制储能电容电压,而且电压变化很大降低了电路的性能。

The realization of AVC needs coordination and unification of subarea control in the same voltage grade and interlayer control of different voltage grade.

AVC的实现应是同一电压等级下的分区控制及不同电压等级间层间控制的协调、统一。

The dynamic equation describing the relationship between surface charge density and voltage is established. The constants of voltage/field strength A and B are introduced.

建立了电压与绝缘子表面电荷分布的动态方程,分析了直流电压作用下表面电荷的积聚过程,并给出了绝缘子表面电荷动态分布的近似表达式。

Measure character: Frequency limits: CH1:dResolution of C ~ 225MHz frequency: 10 / second time-interval resolution : N/A measures speed: Can amount to 200 times measure / the second mixes in limits of the voltage on GPIB sensitivity : DC ~ 100MHz: 200MHz of ~ of 5Vac+dc 100MHz of 20mVrms ~±: 225MHz of ~ of 5Vac+dc 200MHz of 30mVrms ~±: Input of 5Vac+dc of 40mVrms ~± adjusts:(CH1 chooses) impedance, coupling: 1M Ω or 50 Ω, ac or Dc are low connect filter: 100kHz, but switch attenuation:× 1 or reference of × 10 exterior time base inputs: 1, 5, 10MHz sparks: CH1, to rising / drop the edge sparks, the percentage that uses signal n or absolutely voltage install n, setting sensitivity mixes to low, medium or tall gate start: Automatic, the hand is moved (setting gate time or resolution digit); Exterior, defer interface: Standard GP-IB(IEEE 488.1 and 488.2), take; of SCPI compatible language to say RS-232 power source only: 10 % of 100-120VAC ±, 50, 60 or 10 % of 400Hz ± 10 % of 220-240VAC ±, 50 or 10 % of 60Hz ± are suttle: 3kg dimension: 348.3mm of × of 212.6 × 88.5H

测量特征:频率规模:CH1:dc~225MHz 频率分辨率:10位/秒时候距离分辨率:N/A 测量速度:可达200次测量/秒在GPIB上电压规模和灵敏度: DC~100MHz: 20mVrms~±5Vac+dc 100MHz~200MHz:30mVrms~±5Vac+dc 200MHz~225MHz:40mVrms~±5Vac+dc 输入调节:(CH1选择)阻抗,耦合: 1MΩ或50Ω,ac或dc 低通滤波器: 100kHz,可切换衰减:×1或×10 外部时基参考输入: 1,5,10MHz 触发: CH1,对回升/回升沿触发,用信号电平的百分数或相对电压设置电平,设置灵敏度至低、中或高闸门和启动:主动,手动(设置闸门时候或分辨率位数);外部,延迟接口:尺度GP-IB(IEEE 488.1和488.2),带SCPI兼容说话;只讲RS-232 电源:100-120VAC±10%,50,60或400Hz±10% 220-240VAC±10%,50或60Hz±10%净重:3kg 尺寸:212.6×88.5×348.3mm

Specially, the problem of voltage collapse about SVC nonlinear control is studied.

针对电力系统电压崩溃的特殊性,就SVC对电力系统电压崩溃的影响进行了分析研究。

The thesis is focused primarily on various components of SVC control and...

仿真结果表明,由于模糊控制的引入,削弱了滑模变结构控制的抖振现象,所设计针对电压的SVC控制策略实现简单,不但可以显著的改善系统的电压稳定,还可以明显的改善系统的功角稳定,提高了系统的暂态和动态稳定件。

The numerical results revealed the following phenomena: For the linear sweep voltage, the field-enhanced effect retards the progress of the MOS capacitance, and the lower voltage sweep rate, the larger influence of fieldenhanced effect.

数值分析首次揭示了下述现象:对于线性电压扫描作用下MOS结构的电容瞬态特性:电场增强产生效应阻碍着MOS结构电容的下降,这种作用在较低的电压扫描率下更明显。

Transient voltage-current characteristics of OLED show hysteresis effects in the bias regime depending on the direction and speed of bias sweep.

对OLED器件施加扫描电压时,器件的瞬态电压-电流特性表现出滞后现象。

Furthermore, the threshold voltage and subthreshold swing shift of a-Si:H TFT under DC operation is discussed and measured.DC voltage stress causes a constant Vt shift ,but subthreshold swing isn't change much.

另外,考量元件稳定度的加速实验,尝试分析偏压时间对於临界电压偏移量以及次临界摆幅的影响,结果显示长时间的直流偏压只会对临界电压偏移量造成影响,对於次临界摆幅的影响很小。

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