电压

It is pointed out that not only the bridge voltage but also the supply voltage have influence on null point and sensitivity for pressure sensors.

分析了自平衡电桥激励的压力传感器的输出信号与桥电压、供电电压及流体压力之间的关系，并指出，不仅桥电压而且总激励电压都对零点和灵敏度有影响。

A different test voltage must be used as compared with AC (1.414xAC RMS Voltage=DC Peak voltage).

同样的测试，与交流电压相比较﹐直流测试电压数值是不同的(1.414 X 有效值电压=直流峰值电压)。

First of all the differences between photoelectric current / voltage transformer elements in HV and UHV switchgear assembly and independent electric device of conventional open porcelain knob photoelectric current / voltage transformer are described in this paper,then the photoelectric current / voltage transformer elements in HV and UHV switchgear assembly are classified,and the working principle and technical performances of photoelectric current / voltage transformer elements in 500 kV switchgear assembly abroad are introduced in detail.

首先论述了高压和超高压组合电器中光电式电流/电压互感器元件和常规敞开瓷柱式光电电流/电压互感器独立电气设备在概念上的区别，然后对组合电器中光电式电流/电压互感器元件进行了分类。并详细介绍了国外550kV 超高压组合电器中光电式电流/电压互感器元件的工作原理及技术特性。对 ABB 公司、阿尔斯通公司、三菱公司、西门子公司等生产的245～550kV 户外超高压新型组合电器进行了较详尽地介绍和分析，主要是：①基本结构及特点；②主要技术参数

The voltage and the sensitivity of voltage to system operation parameters are calculated by Newton power flow approach; the various higher order derivatives of voltage and voltage sensitivity to line openbreak parameter can be obtained by using the convergent correction equation of power flow and the equation of calculating sensitivity for the N power system. Finally, the voltage and sensitivity of N-1 power system can he calculated by correcting the voltage and sensitivity of N power system by Taylor series expansion.

通过牛顿潮流计算出N网络的各节点电压及其对系统运行参数的灵敏度；利用已收敛的潮流修正方程式和N网络灵敏度计算方程式分别对线路开断参数多阶求导，从而计算出电压和灵敏度对此线路开断参数的多阶导数值；根据泰勒级数展开式修正N网络的电压和灵敏度值，得到N-1网络的电压和灵敏度值。

In the primary the induced voltage is practically to, opposes, voltage.

加电压 电压大等，级，感应电压与加电压大等，但。

The instantaneous power theory was employed to analyze the instantaneous power of the control winding and the control scheme for the DWIG system with diode bridge load was obtained. The component of the currents on the control-winding flux determines the instantaneous reactive power, and the component on the perpendicular direction of the flux decides the reactive power. The former one influences the DC voltage of the diode bridge on power winding and the latter one influences the DC voltage of the static excitation controller of control windings.

基于瞬时功率理论，推导出按控制绕组磁场定向时控制绕组的瞬时功率，在此基础上分析了带整流桥负载的定子双绕组感应电机发电系统在宽转速运行时的电压调节机理，即：控制绕组电流在控制绕组磁场及其法线上的分量，分别决定着发电系统功率绕组整流桥直流侧电压和控制绕组静止励磁控制器(static excitation controller，SEC)直流侧电压，据此提出宽转速运行时DWIG发电系统电压控制策略。

The voltage control is a rheostat that sets the operating point of the voltage regulator and therefore controls the output voltage of the generator set, within its design limits.

电压控制：电压控制是设定电压调整器的运行点从而在设计范围内控制发电机组的输出电压的变阻器。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

In order to improve the sensitivity of sensors to improve sensor linearity, linear range of the sensor increases, the design of the two-phase反串coil, two secondary coil of the opposite polarity voltage, LVDT output voltage is two times level difference between the voltage coil, the output voltage and core values of the linear relationship between displacement.

为了提高传感器的灵敏度，改善传感器的线性度、增大传感器的线性范围，设计时将两个线圈反串相接、两个次级线圈的电压极性相反，LVDT输出的电压是两个次级线圈的电压之差，这个输出的电压值与铁心的位移量成线性关系。

The symmetric space voltage vector realized by TMS320F240 in software is introduced.

介绍了TMS320F240用软件生成对称空间电压矢量的方法，特别是针对高精度V/F值控制的应急通风机对交流变频调速的要求，通过检测直流侧电压实现对输入电压波动的前馈补偿，以提高输出电压精度，改善输出电流波形。

I can not make it blossom and suits me

我不能让树为我开花

When temperatures are above approximately 80 °C discolouration of the raceways or rolling elements is a frequent feature.

当温度高于 80 °C 左右时，滚道或滚动元件褪色是很常见的特征。