电压

We used coupling phototube convert the voltage of reflector voltages of klystron linearly to lower voltage, and convert the lower voltages of standing wave measuring line and crystal detector inputting power linearly to higher voltages by operation amplifier. Then we inputted these voltages to computer by analog-to-digital card and plotted the graphs of working characteristics of reflecting klystron with software .

利用光电耦合器将速调管反射极高电压线性转换为低电压，同时将驻波测量线测得电场强度的电压值和晶体检波器所测得的反射式速调管输出功率的电压值通过运算放大器线性放大，然后经过模数转换卡采集到微机中，利用软件绘制出速调管的工作特性曲线。

The authors used coupling phototube convert the voltage of reflector voltages of klystron linearly to lower voltage and converted the lower voltages of standing wave measuring line and crystal detector inputting power linearly to higher voltages by operation amplifier. Then inputted these voltages to computer by analog-to-digital card and plotted the graphs of working characteristics of reflecting klystron with software.

利用光电耦合器将速调管反射极高电压线性转换为低电压，同时将驻波测量线测得电场强度的电压值和晶体检波器所测得的反射式速调管输出功率的电压值通过运算放大器线性放大，然后经过模数转换卡采集到微机中，利用软件绘制出速调管的工作特性曲线。

we use magnetron sputtering to deposit Al-AlN particle film as SED's electron-emitter. The Cr-Cu-Cr electrode was prepared by electron beam vaporize deposition. The voltage used to electroform the cracks are periodic trigonal wave and the breadth of the voltage are increasing gradually.

文章中采用铝-氮化铝薄膜材料作为SED器件的电子发射层，采用磁控溅射的方法镀电子发射层，采用电子束蒸发的方法镀铬-铜-铬材料作为电极；电形成过程中采用电压幅值恒定、周期性重复的脉冲和电压幅值渐增的电压脉冲作为电极电压。

According to singular entropy and Percent of contribution to total energy, the de-noising rank is obtained and the signal is reconstructed. The thesis compares reconstruct wave form of different reconstruct rank and the error of original signal and reconstruct signal is contrasted.According to voltage flicker measurement, voltage flicker detection method based on Mathe Matical filtering and Teager Energy Operator is proposed. The multiple MM filter filters out pulse noise and white noise contained in fliker signal, then the filtered signal is tracked accurately and quikly via TEO.

提出了基于数学形态滤波和TEO能量算子的电压闪变快速测量方法，含噪电压闪变信号经过多结构元素复合数学形态滤波后，采用TEO能量算子计算跟踪电压闪变信号的包络，得到的包络信号用Pisarenco谱分析方法获得闪变调制信号的幅值频率等参数，对不同情况下的电压闪变信号进行了仿真验证。

The main work can be summed up as follows: Firstly, we studied the thermal-field properties of VCSELs, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. Secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of VCSELs, and then studied the influences of the oxide-confining region with different position or thickness, and the different sizes of the gain-guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. Thirdly, we realized the coupling of electricity, optical and thermal-fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, Fermi levels and optical-field. Finally, we gave the equipotential line distributions with considering N-DBR and double oxidized-confining regions, and analyzed theinfluences of N-DBR and double oxide-confining regions on the distributions of the current density, carrier concentration, temperature and optical-field.

具体工作可以概括如下：首先，研究了VCSEL的热场特性，分析了电流扩展，材料参数和工作条件对于温度分布的影响；其次，从电极电压入手，计算出激光器中的等势线分布，并对不同深度处的电压和电流分布进行比较，研究了高阻区的不同位置和不同厚度、限制层和出射窗口半径的大小对电流密度、载流子浓度和温度分布的影响；再次，实现了电、光、热耦合，求出了阈值电压，计算了不同偏置电压下的电流密度分布、载流子浓度分布和热场分布，分析了温度和载流子浓度变化对折射率、费米能级和光场的影响；最后，给出了考虑N-DBR和双氧化限制层时激光器中的等势线分布，分析了N-DBR和双氧化限制层对VCSEL电流密度、载流子浓度、温度和光场分布的影响。

According to the model, the reasons for electric nonlinearity for sensitivity is analyzed. This paper points out that the equivalent functions of nonlinear resistors in the circuit can be simulated by a voltage-controlled source and its expansion function, showing the behavior of electric nonlinearity for sensitivity.

依据此理论模型，对灵敏度电压非线性现象的成因进行了理论分析，并利用其中受电压控制的电压源及其扩展功能来模拟非线性扩散电阻在电路的等价作用，进而显示出压力传感器灵敏度电压非线性的成因。

The input offset voltage is fixed for a particular amplifier, however the contribution due to input bias current is dependent on the circuit configuration used. For minimum offset voltage at the amplifier input without circuit adjustment the source resistance for both inputs should be equal.

对于一个给定的OP，输入失调电压就已经给定了，但是由输入失调电流所带来的失调电压与所采用的电路结构有关系为了减小输入偏置电流所带来的失调电压，应该使得使得同、反相输入端对地的直流电阻相等，使得由于偏置电流在输入电阻上压降所带来的失调电压相互抵消。

As a DC/DC basic structure is adopted, the operational amplifier leads the non inverting input end voltage of the error amplifier to follow the input voltage linearly, thus realizing the linear following relation between the output voltage and the input voltage.

由于采用DC/DC的基础结构，增加运算放大器使误差放大器的同相输入端电压与输入电压线性跟随，从而实现输出电压与输入电压的线性跟随关系。

The scheme can effectively restrict operation over-voltage, and has the function of the lightning arrester, and serves as a reference for other projects.

电力系统中普遍存在过电压情况，根据引发原因主要有以下几种：谐振过电压、操作过电压和雷电过电压。

Main features:- Hole spacing 2.25mm-operating voltage: 4.5 V to 24 V-switching offset compensation at 62Hz under - over-voltage Protection - VDD-pin Reverse voltage protection - Short circuit protection open-drain output is hot off - working magnetic field range: DC to 10kHz-output goes low with magnetic south pole contacts marked on the package side, while the higher magnetic flux density and area of S1, As S2-all temperature and supply voltage range magnetic parameters on-chip temperature compensation circuitry of the minimum drift - EMC meet DIN40839.

主要特点：–霍尔片间距2.25mm–工作电压： 4.5 V 至 24 V–开关偏移补偿在62Hz下–过电压保护– VDD-pin反向电压保护–短路保护漏极开路输出被热关断–工作磁场范围：直流到10kHz–输出变低用磁场南极接触封装上有标记边，而更高磁通量密度面积S1，如同S2–全温度和供电电压范围下磁参数的片上温度补偿电路的最小漂移– EMC适应DIN40839。

I can not make it blossom and suits me

我不能让树为我开花

When temperatures are above approximately 80 °C discolouration of the raceways or rolling elements is a frequent feature.

当温度高于 80 °C 左右时，滚道或滚动元件褪色是很常见的特征。