电介体

On the respect of piezoelectric properties, Mn coexisted as Mn〓 and Mn〓 in PZNPZT system and suitable Mn doping as acceptor improved Q〓 and lowed tan δ greatly, meanwhile, high density assured K〓 out of decrease.

适量的锰掺杂使PZN-PZT体系的机械品质因数Q〓上升和介电损耗tan δ下降，同时瓷体较高的致密度又保证了机电耦合系数K〓不致降低。

The influences of forming solid solution, generating new compound and addition of flux on sinterability, phase-structure and microwave dielectric properties of zinc titanate were analyzed.

对钛酸锌介电陶瓷的改性研究进行了综述，分析了形成固溶体、生成新的化合物和添加助熔剂对钛酸锌陶瓷的烧结性、相结构和微波介电性能的影响。

A simple relationship of dielectric relaxation is proposed,which can completelyexpress the high and low frequency dielectric relaxation in PMN-PT relaxorferroelectrics.It fits complicated experimental Argand diagram closely.

通过对弛豫铁电体PMN-PT频域介电谱的分析，提出能完全描述高、低频不同弛豫特性的复杂弛豫的简单关系式，并且完好地拟合了不规则的弛豫Argand图。

Besides, A new method based on the AES depth profile and line shape analysis was developed in this thesis.

增加Pt层后，PZT薄膜的介电常数高达620，与体相PZT的介电性能相近（590）。

On the other hand, the electrical properties of MOSFETs such as IDS-VDS and IGS-VGS were investigated. The interface quality of high-κ thin films and substrate interface was investigated through subthreshold swing, gated-diode character-istics, and charge pumping methods. After analysis, some important parameters, such as the density of interface trap per area, effective capture cross section, and the surface recombination velocity (s0), were extracted.

对於金氧半电晶体的电气特性研究包含：IDS-VDS和IGS-VGS，并利用次临界摆幅、闸二极体(gated-diode)与电荷汲引法来研究高介电系数薄膜和矽之间的界面特性，经由分析可得界面缺陷密度、界面缺陷等效捕获截面积及载子表面复合速率(s0)等等的重要参数。

Fourth, presents the main factors which affect the dielectric properties after poling and piezoelectric coefficient are the modifiability of the displacement between cation and anion center in oxygen-octahedral structure and the existence of MPB.

第四，提出本系统极化后介电常数及压电系数表现主要影响因素为氧八面体中阴阳离子偏移量的改变量及 MPB之存在。

In this study, 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 is a composition within morphotropic phase boundary. It was prepared by solid state reaction method. The dense ceramics with various grain size distributions were prepared by adjusting process. And grain size effect on crystal structure, dielectric, ferroelectric and piezoelectric properties were studied in detail.

故本研究将以固态反应法合成(Bi0.5Na0.5)TiO3-BaTiO3系统中之MPB 组成之0.94(Bi0.5Na0.5)TiO3-0.06 BaTiO3，并利用制程的调整以制备具有不同晶粒大小之致密陶瓷体，再来探讨晶粒大小变化对晶体结构、介电性质、铁电性质以及压电性质之影响。

The structure parameters of the component are further varied, to obtain multivarious frequency components. The resonance frequency of a component is reduced by filling high permittivity medium, and this makes it possible to keep the design of a component compact at low frequency even.

进一步改变结构参数，可获取不同谐振频率的器件，且可在腔体中填充高介电常数介质来减小器件的谐振频率，克服了以往使用腔体结构在低频段时体积过大等问题。

The effect of tilting in oxygen octahedra on the dielectric properties is due to the interoctahedral angle increasing to 180℃ consuming the thermal energy, which results in the less effect on polarizability with increasing temperature.

氧八面体扭转能使介电常数温度系数朝正的方向变化的本质是，氧八面体间角吸收热能朝180℃变化，导致纯温度变化对极化率的影响变小。

ABSTRACT The diffused phase transition and frequency dispersion of Pb-based complex perovskite relaxor ferroelectrics of PZN, PMN etc. were studied by the measurements of spectum of dielectric permittivity with temperature at different frequencies as well as by the means of differential thermal analysis and ferroelectric hysteresis technique. It was found that there are various polarization relaxors which cause DPT characteristics.

本文利用介温谱的测量，差热分析和电滞回线对以PZN，PMN为代表的铅系复合钙钛矿型弛豫铁电体的相变弥散和频率色散性等弛豫特性进行了分析研究，对产生弛豫的根本原因提出了新的看法，认为这类材料的DPT特性并不是一种由成份及结构不均匀的统计分布所造成的&准&弛豫现象，而是由材料本身弛豫机制所致。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。