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XRD shows: when the value of x is between 0.1 and 0.3, the alloying thin film remains the structure of hexagonal wurtzite and the angle of (002) diffraction peak becomes bigger as the value of X increases; The photoluminescence spectra at room temperature shows that the PL spectra of the alloying thin film is composed of the stronger UV emission band and weaker visible band, and UV emission peak will have the blue shift with the content of Mg increasing and the visible emission weakened.

XRD衍射测试表明:在0.1<x<0.3范围内,合金薄膜仍然保持氧化锌六角型纤锌矿结构,(002)衍射峰位随x的增大向大角度方向移动,在X≥0.3的范围内,合金薄膜的结构则为氧化锌和氧化镁的混合结构;室温光致发光谱表明:ZnMgO合金薄膜PL谱都是由较强的紫外发射带组成,且随着Mg含量的增加紫外发射峰位发生蓝移,同时可见发射增强。

The light travels in a composite medium made up of the film, the substrate and the cladding.

光在由薄膜,衬底和覆盖层组成的混合介质中传输。

Co-Pt alloy films are promised candidates for high-density magneto-optical recording media due to their large Kerr rotation at blue wavelengths. But the origin of perpendicular magnetic anisotropy in these films has not been well-understood.

由铁磁金属Co和贵金属Pt组成的合金薄膜在短波长具有大的磁光Kerr效应,是一种很有希望的高密度磁光存储材料,但关键是要使其具有垂直磁各向异性。

Its shape is cast by the water, no binder of dry sand and film composition, and under the pouring in a vacuum.

其铸形是由无水、无粘结剂的干砂和薄膜组成,并处于真空下浇注。

Solar cells can now be made from a range of materials, from the traditional multicrystalline silicon wafers that still dominate the market to thin-?lm silicon cells and devices com- posed of plastic or organic semiconductors.

目前太阳能电池可通过一系列材料制造,从仍主导着市场的传统多晶硅片到薄膜硅电池以及由塑料或有机半导体组成的设备。

CuS thin film composed of nano/micro tubes with diameters in the range of 150 to 200 nm and lengths up to several microns and CuO thin film composed of nano/micro crystals with sizes ranging from 150 to 250 nm have been successfully prepared through a gas-solid sulfurization and oxidation reaction using well-aligned CuCl nanorod films as precursor.

在本文中,以由氯化亚铜纳米棒组成的薄膜为前驱体,分别通过气-固相的硫化和氧化反应获得了由直径150到200纳米,长度达数微米的硫化铜管组成的薄膜和粒径为150到200纳米的氧化铜纳米/微米晶所组成的薄膜。

Then GaN nanostructured thin films comprised of regular hexagonal crystal grains have been successfully synthesized by ammoniating Ga2O3 films at the temperature of 850℃ for 15 rain in a quartz tube. X -ray diffraction reveals that the synthesized GaN is of a hexagonal wurtzite structure with lattice constants a =0.318 nm and c =0.518 nm.

然后将硅基Ga2O3置于管武石英炉中,在850℃的氨化温度下氨化15min后,成功制备出GaN薄膜,该薄膜由正六边形的晶粒组成。X射线衍射表明GaN具有六方纤锌矿结构,晶格常数为a=0.318nm和c=0.518nm.X射线光电子能谱的测试确定了样品中Ga-N键的形成,并且Ga和N的化学计量比为1:1。

In this paper we focus our attention to CoCr thin films. Investigation is carried out on both magnetic properties of the CoCr、FeNi、Ti thin films and the multilayers consisted of CoCr、FeNi and Ti thin films.

本文选择垂直磁化CoCr合金薄膜作为重点研究对象,用单极磁头、双层介质的组合,对CoCr薄膜、FeNi薄膜、Ti薄膜及由CoCr、FeNi、Ti膜组成的多层膜结构和磁性能进了仔细研究。

The results showed that with the increase of nitride partial pressure in the range of 2. 0~8. 0×10〓Pa, the hardness of NbN, TaN single layer films decreased, but the hardness of TiN films kept unchanged. The crystal structure of TaN films changed from the mixture of tetragonal β-Ta and faced-center cubic δ-TaN to hexagonal TaN and that of NbN films from FCC δ-NbN to hexagonal ε-NbN. The crystal structure of TiN films is FCC in all the range of partial pressure researched.

研究结果表明:在2.0~8.0×10〓pa的氮分压之间,随氮分压的升高,TaN和NbN薄膜硬度下降,而TiN薄膜的硬度值不随氮分压的变化而变化;TaN薄膜的相结构由低氮分压时的正方β-Ta和面心δ-TaN所组成的两相混合物过渡到六方TaN结构,NbN薄膜则由面心立方结构的δ-NbN逐渐过渡到六方结构ε-NbN,而TiN薄膜的晶体结构基本不随氮分压的变化而变化,均为面心立方结构。

The transmission properties of the 1-D Fibonacci sequence photonic crystals made up of dispersive SiO2 and TiO2 thin films in visible region are investigated by an eigen matrix method,and the results are compared with that without dispersion conditions.

用特征矩阵法研究了由正常色散SiO2/TiO2薄膜组成的Fibonacci序列一维光子晶体在可见光波段的传输特性,并与无色散时的传输特性做了对比。

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