特性态

The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to the conducting-state, when the anode voltage in the forward blocking-state is increased to a critical value.

当工作在正向阻断态的阳极电压增大到某一临界值时，静电感应晶闸管的I-V曲线呈现出反向转折特性，甚至转向导通态。

After pre-HE stress, the generated interface states can reduce the number of holes being injected into gate oxide generated by avalanche process during snapback stress, which causes the MOSFET snapback degradation to decrease in on-state and off-state modes.

在预加热电子应力后，HE产生的界面陷阱在snapback应力期间可以屏蔽雪崩热空穴注入栅氧化层，使器件snapback开态和关态特性退化变小。

Aimed at the problem of choosing the initial value when the Newton method is used to compute the controlling unstable equilibrium point, a practical and rigorous solving scheme was presented: by identifying the controlling load bus of the given fault, and using the Thevenin equivalent circuit to represent the rest of the system at the state of the post disturbance stable equilibrium point, using the steady equivalent circuit to represent the induction motor in composite load, and then using the torque characteristics of induction motor, a point near the CUEP is gained to be the initial value. The second order normal forms was used to approximate the stable manifold of CUEP, and the local approximating boundary of the region of attraction of the post disturbance stable equilibrium point was gained. Then just by simulating the state of the system at the fault clearing time, the transient voltage stability of the system could be determined.

针对采用牛顿法求取故障后系统主导不稳定平衡点(controlling unstable equilibrium point，CUEP)存在的初值选取难题，提出一种实用但不失严谨的解决方案：通过识别给定故障的主导负荷母线，对主导负荷母线以外系统由故障后稳定平衡点处的状态进行戴维南等值，对负荷中感应电动机部分采用其稳态等值电路，再由感应电动机的转矩特性求得CUEP附近的一个点作为近似的CUEP，以此为迭代初值可靠求得CUEP；采用二阶正规型来近似CUEP的稳定流形的方法求得近似的局部吸引域边界；由仿真得到故障清除时刻系统的状态并根据该状态是否位于吸引域内判断系统的暂态电压稳定性。

Results of the experiment shows that the servo system having stated characteristics of transient, steady state and robustness.

实验结果表明系统具有一定的瞬态、稳态特性和鲁棒性。

The density of states and energy band structure of the monoclinic crystal in low temperature and the tetragonal crystal in high temperature have been studied.

研究了低温单斜晶型和高温四方晶型结构的VO2电子态密度和能带结构，通过分析发现，四方晶的金属性比较明显，这是由于电子态密度和能带结构分析结果表明不同特性产生的原因是V原子的3d电子贡献不同导致的。

Based on the thermionic emission theory, a method to extract parameters of Si SBD is given in this study. Using this model, we tested the characteristics of devices and extracted the parameters of two kinds of samples. The ideality factor is 1.01 and 2.13 respectively. The zero-field barrier height is 0.70eV and 0.72eV. The surface state density is 5.5×10~(15)cm~(-2)eV~(-1) and 4.3×10~(12)cm~(-2)eV~(-1). The interface oxide capacitance is 9.0×10~(-4)F·cm~(-2) and 5.4×10~(-6)F·cm~(-2). The neutral level of the surface states is 0.81eV and 1.1eV. The reverse breakdown voltage is 101V and 56V.

本研究在热电子发射模型的基础上，建立一种提取Si基SBD器件特性参数的理论模型，基于这个模型，对两种样品的性能进行测试，并计算出退火和未退火样品的理想因子分别为1.01和2.13、零电场势垒高度分别为0.70eV和0.72eV、表面态浓度分别为5.5×10~(15)cm~(-2)eV~(-1)和4.3×10~(12)cm~(-2)eV~(-1)、界面层电容分别为9.0×10~(-4)F·cm~(-2)和5.4×10~(-6)F·cm~(-2)、表面态中性能级为0.81eV和1.1eV、反向击穿电压101V和56V。

Besides,we also draw and describe some other problems in theexisting frame:such as the relation between Schmidt decomposition and localunitary transformation,the vector expression of pure state density matrix,traitsof certain points locating near the boundary of disentangled region.

另外，对于其它一些不甚重要的问题，如Schmidt分解与定域酉变换的联系，纯态密度矩阵的向量表示的特点，非纠缠态区域边界上的点的某些特性等等，我们一并在现有的框架中给出描述。

Analyses for well posed characteristic and boundedness of the solutions to the models, especially for existence and stability of the corresponding cyclic steady-state solutions and other large time behavior of the solutions to the models have much meaning to assure that the models are practical and to understand the processes of this kind reactors.

分析模型解的适定性和有界性，特别是循环定态解的存在唯一性和稳定性以及其它解的大时间性态，对保证模型的实用，深刻了解此类反应器的过程特性有重要的意义。

The photocatalytic oxidation performance and kinetics of the simulated organic wastewater in a circulating slurry photocatalytic reactor was investigated.The effects of operation conditions, such as dosage of photocatalyst, illumination time, initial benzamide concentration, pH value, anions and cations in wastewater, on the photocatalytic oxidation performance were discussed.

采用循环式浆态光催化反应器对苯甲酰胺模拟废水光催化氧化特性和动力学进行了研究，系统地考察了操作条件对模拟污染物光催化降解的影响，并与搅拌式和鼓泡床式浆态光催化反应器中苯甲酰胺的降解效果进行对比。

These antennas can cover GSM900/DCS/PCS/UMTS operation. In the chapter 2, the antenna is designed based on the concept of monopole antenna. Furthermore, the antenna structure have two radiant paths and coupled each other at tail end to do impedance matching. In addition, to raise distance between radiation plane and ground will avoid capacitative effect effectually. In the chapter 3, the antenna is designed based on the concept of planar inverted-F antenna. Furthermore, that the antenna structure have two radiant paths and coupled each other at tail end to do impedance matching is similar to chapter 2. But there is a difference in them. We can choose the short position to change input impedance at this structure. In the chapter 4, the antenna is designed based on the concept of planar inverted-F antenna which takes coupled-fed. It will produce the first mode and high-order mode near the frequency, 900MHz. The feature of this type is to reduce the volume effectually. This antenna can not only cover GSM900/DCS/PCS/UMTS operation but maintain good radiation efficiency. Finally, we will compare three antennas, and develop procedure with industrial view, and propose the prospect of the GSM/GPRS antenna in PND, as a conclusion.

在第二章中，我们使用单极天线设计概念，使用双路径架构并於末端耦合来对天线阻抗做匹配，产生涵盖GSM900/DCS/PCS/UMTS四频操作频带，并提高与接地面的辐射高度，以避免电容效应，使天线具有良好的辐射特性；在第三章中，使用倒F形天线设计概念，使用双路径架构於末端耦合，并於辐射臂上采取适当接地点电感效应作输入阻抗匹配，达成涵盖GSM900/DCS/PCS/UMTS系统的四个操作频带；在第四章中，采用倒F形架构并使用耦合馈入方式，使得长辐射金属臂在低频900 MHz附近产生共振，产生低频基频模态及高阶模态，以达成宽频及频宽涵盖GSM900/DCS/PCS/UMTS频带操作，并有效缩减使用体积；最后，分别比较此三种架构的优缺点，再加以业界角度来思考，研发产品天线的流程及思考方向，以及天线应用於可携式导航装置中未来的展望作为本论文的总结。

In the United States, chronic alcoholism and hepatitis C are the most common ones.

在美国，慢性酒精中毒，肝炎是最常见的。

If you have any questions, you can contact me anytime.

如果有任何问题，你可以随时联系我。