热电子的

Based on the thermionic emission theory, a method to extract parameters of Si SBD is given in this study. Using this model, we tested the characteristics of devices and extracted the parameters of two kinds of samples. The ideality factor is 1.01 and 2.13 respectively. The zero-field barrier height is 0.70eV and 0.72eV. The surface state density is 5.5×10~(15)cm~(-2)eV~(-1) and 4.3×10~(12)cm~(-2)eV~(-1). The interface oxide capacitance is 9.0×10~(-4)F·cm~(-2) and 5.4×10~(-6)F·cm~(-2). The neutral level of the surface states is 0.81eV and 1.1eV. The reverse breakdown voltage is 101V and 56V.

本研究在热电子发射模型的基础上，建立一种提取Si基SBD器件特性参数的理论模型，基于这个模型，对两种样品的性能进行测试，并计算出退火和未退火样品的理想因子分别为1.01和2.13、零电场势垒高度分别为0.70eV和0.72eV、表面态浓度分别为5.5×10~(15)cm~(-2)eV~(-1)和4.3×10~(12)cm~(-2)eV~(-1)、界面层电容分别为9.0×10~(-4)F·cm~(-2)和5.4×10~(-6)F·cm~(-2)、表面态中性能级为0.81eV和1.1eV、反向击穿电压101V和56V。

The effect of thermal difffusion on electrical properies of SrTiO_3multi-func-tion ceramics with coation ion was studied by application of the even design experimental method. Microstructure were investigated by SEM and TEM. Element analysis were examined by EPA and EDX techenolegy. No new intergranuar phrase were observed. The relationship amang electrical properties,diffusion conditions of the materials were discussed.

采用均匀设计液相涂覆热扩散方法，研究了涂覆离子，热扩散条件等对SrTiO_3系陶瓷电性能的影响；用扫描电子显微镜和透射电子显微镜作微观分析，用X射线能谱仪和电子探针作元素分析，证实钠离子的涂覆热扩散未在陶瓷晶粒之间产生新相，钠离子在晶粒内表面形成了一扩散层，讨论了扩散条件与电性能的内在联系。

Blue-light-emitting polyfluorene derivatives with bulky bipolar pendent groups at C-9 position has been synthesized. The combination of electron-deficient oxadiazole and electron-rich triphenylamine affords a highly efficient light-emitting material by improving charge injection and transport in electroluminescent device.

具有刚硬双极性侧链的高效率蓝光聚茀高分子材料已成功被合成，藉由在fluorene的9号碳位置导入了有利於传输电子的oxdiazole片段与利於传输电洞的triphenylamine片段所结合的TPAOXD，不仅增加电荷注入与传输能力，同时提高材料的热稳定性质(Tg： 186 oC)。

It is shown that there exists a close connection between the physical precesses of nonthermal and thermal emissions in the two-ribbon flares, and, in particular that the nonthermal electrons from source regions of type HI, type IVμ and other type IV bursts are responsible for hard X-ray and r-ray bu...

探讨了其中主要的共生辐射的物理过程和内在联系，并讨论了Ⅲ型、Ⅳ型和微波射电爆发源的非热电子束流对产生Hα双带耀斑和硬X射线爆发所起的重要作用。

SBD is the use of metal and semiconductor contact with the formation of metal - semiconductor barrier made of, so it is a thermal emission diode, with the manufacturing process of continuous improvement and the emergence of special materials, Schottky barrier gate and high-speed FET Large-scale integrated circuit and ultra-large-scale integrated circuits wide field of applications, Schottky diodes on the application of more and more widely.

SBD是利用金属与半导体接触形成的金属-半导体势垒制成的，因此，它是一种热电子发射二极管，随着制造工艺的不断完善及特殊材料的出现，肖特基势垒栅FET及其高速大规模集成电路和超大规模集成电路领域的广泛应用，肖特基二极管的应用范围也越来越广。

SBD is theuse of metal and semiconductor contact with the formation of metal- semiconductor barrier made of, so it is a thermal emission diode,with the manufacturing process of continuous improvement and theemergence of special materials, Schottky barrier gate andhigh-speed FET Large-scale integrated circuit andultra-large-scale integrated circuits wide field ofapplications, Schottky diodes on the application of more and morewidely.

SBD是利用金属与半导体接触形成的金属-半导体势垒制成的，因此，它是一种热电子发射二极管，随着制造工艺的不断完善及特殊材料的出现，肖特基势垒栅FET及其高速大规模集成电路和超大规模集成电路领域的广泛应用，肖特基二极管的应用范围也越来越广。

In this work, nanostructure samples of La1-xCaxMnO3（x=0.2、0.3、0.4、0.5）were prepared by hydrothermal-precipitation method . The structural characterization of the powder samples were done by X-ray diffraction. XRD patterns showed that all the samples ate single perovskite-type phase withoutother impurity or secondary phase. The shape and size of samples were performed on Scanning Electron Microscopy. SEM photographs investigated that temperature of hydrothermal effects the phase of samples and alkalinity of the reaction mixture by ΔTad-T curve measurement device at low magnetic fielded

本论文采用水热共沉淀退火法制备了La1-xCaxMnO3（x=0.2、0.3、0.4、0.5）系纳米结构，用X射线衍射仪确定产物为单相钙钛矿结构，无任何杂峰及第二相；用扫描电子显微镜与透射电子显微镜分析了产物的大小和形貌，发现水热温度对产物的形成起决定作用，随着温度的升高，产物由薄膜状向丝状转变，而溶液的碱度可控制产物的形貌和大小，当碱度为6.35mol/L，水热温度为240 C时，La0.6Ca0.4MnO3的主要形貌为纳米丝并有少量纳米颗粒，纳米丝平均直径为40nm；最后测量了粉末样品在低磁场（1.4T）下的磁热效应，发现水热共沉淀退火法制备样品的最大绝热温度明显高于球磨法制备样品的最大绝热温变。

It is reported that the cooperation of injected hot electrons and holes is necessary in thin gate oxides breakdown.

提出薄栅氧化层的击穿是在注入的热电子和空穴的共同作用下发生的新观点。

Melting point 3410 ℃, boiling point 560 ℃, relative density of 1935, F the external electronic structure of 5d46s2, in the chemical reaction time is very easy to lose 1-6 electronic, but also can get 1-2 electronic, so oxidation number of 0,± 1,± 2, 3, 4 , 5 and 6, with 6 price of the most stable compounds, such as WO3 does not dissolve in water, the air will form in the tungsten trioxide thin protective layer of tungsten, tungsten with fluorine at room temperature, chemical combination, red hot when there is no moisture and Bromine iodide together, red hot when you can and water reaction WO3, at room temperature reaction of tungsten with aqua regia, but the hot concentrated hydrochloric acid and sulfuric acid can only be played with its weak response, but molten nitrate, nitrite, too Hydrogen peroxide, sulfur steam, steam and other phosphorus can play intense reaction, high temperature can not be carbon, boron and silicon reaction of binary compounds, widely used in industrial tungsten steel and tungsten carbide, pure tungsten filament is used to the system, and X-ray tube Tube heating components, semiconductor components can be prepared tungsten silicide, tungsten industrial production is white or black tungsten ore tungsten ore refining.

熔点3410℃，沸点560℃，相对密度1935，F外围电子结构为5d46s2，在化学反应时很容易丢掉1—6个电子，也能得到1—2个电子，所以氧化数为0、±1、±2、＋3、＋4、＋5和＋6，以＋6价化合物最稳定，如WO3不溶于水，空气中的钨会形成薄层三氧化钨保护层，钨能与氟在室温下化合，红热并无潮气时能与溴、碘化合，红热时还能和水反应生成WO3，室温下钨可与王水反应，但热的浓盐酸和硫酸只能与其起微弱反应，但对熔融的硝酸盐、亚硝酸盐、过氧化氢、硫蒸汽、磷蒸汽等能起激烈反应，高温下不能与碳、硼和硅反应生成二元化合物，工业上广泛使用钨钢和碳化钨，纯钨用来制灯丝、电子管和X射线管的发热元件，硅化钨可制半导体元件，钨工业生产是将白钨矿石或黑钨矿石精炼。

On CHE programming, the higher coupling ratio of control-gate makes the higher electrical field across TOX in Si than Ge. Also because of the continuity of displacement vector, the higher permittivity of Ge would cause the lower electrical field at interface. We get the higher gate current in Si than Ge. On CFN programming, the higher CT in Ge would show the higher electrical field across TOX. However, the parameters of F-N tunneling are calculated and showing the gate current in Si is larger than Ge. On the same mechanism of F-N tunneling erasing, the parameters also show the higher electrical filed of Si would cause the higher erasing speed. The continuity of displacement vector also explains the higher electrical field at interface for F-N tunneling programming/erasing.

从通道热电子穿隧写入的模拟结果发现，由於控制闸极耦合电容的影响，加上电位移向量在半导体-氧化层界面连续的观念，拥有较高介电常数的锗反而得到较小的等效电场，决定了穿隧电流反倒是不如矽基板；在F-N穿隧写入的模拟中，即便锗基板拥有较大的总耦合电容，使得在浮闸的耦合电压大於矽基板，但仍旧是半导体-氧化层界面的电场扮演了穿隧电流的决定性因素，得到的结果仍旧是矽基板的写入速度高於锗基板；在F-N抹除的模拟中，运用与F-N写入相同的数学模型，仍旧看见在锗基板上未能得到速度上的改善，同时用数学的计算展示了合理的解释。

Singer Leona Lewis and former Led Zeppelin guitarist Jimmy Page emerged as the bus transformed into a grass-covered carnival float, and the pair combined for a rendition of "Whole Lotta Love".

歌手leona刘易斯和前率领的飞艇的吉他手吉米页出现巴士转化为基层所涵盖的嘉年华花车，和一双合并为一移交&整个lotta爱&。

This is Kate, and that's Erin.

这是凯特，那个是爱朗。