热电子发射

It has been accepted that in metal-semiconductor contacts exist two kinds of current transport mechanisms (i.e., diffusion and thermionic emission) in series with each other.

本文把在金属-半导体接触中同时存在着扩散和热电子发射这样两种互相串联的电流传输机构这一看法推广到了异质结。

The parasitic transistor is also dominated by thermionic emission effect in temperature response.

根据元件模拟的结果，可以推论出在闸极电极的周围，存在一个寄生电晶体，并且在温度效应上，同样受到热电子发射效应的影响。

Based on the thermionic emission theory, a method to extract parameters of Si SBD is given in this study. Using this model, we tested the characteristics of devices and extracted the parameters of two kinds of samples. The ideality factor is 1.01 and 2.13 respectively. The zero-field barrier height is 0.70eV and 0.72eV. The surface state density is 5.5×10~(15)cm~(-2)eV~(-1) and 4.3×10~(12)cm~(-2)eV~(-1). The interface oxide capacitance is 9.0×10~(-4)F·cm~(-2) and 5.4×10~(-6)F·cm~(-2). The neutral level of the surface states is 0.81eV and 1.1eV. The reverse breakdown voltage is 101V and 56V.

本研究在热电子发射模型的基础上，建立一种提取Si基SBD器件特性参数的理论模型，基于这个模型，对两种样品的性能进行测试，并计算出退火和未退火样品的理想因子分别为1.01和2.13、零电场势垒高度分别为0.70eV和0.72eV、表面态浓度分别为5.5×10~(15)cm~(-2)eV~(-1)和4.3×10~(12)cm~(-2)eV~(-1)、界面层电容分别为9.0×10~(-4)F·cm~(-2)和5.4×10~(-6)F·cm~(-2)、表面态中性能级为0.81eV和1.1eV、反向击穿电压101V和56V。

By comparison between SMM HXRBS observation and ground observation of Hα and CaIIK lines, especially through the combined study between SMM HXRBS observation and chromospheric flare models, the results show that: in the initial stage of impulsive phase, there is a correlative relation betweem Hα line intensity and hard X-ray emission; different spike in hard X-ray flux curve represents the burst at different location; the energy taken by non-thermal electron beam is larger than the radiative loss in chromosphere; for the flare studied here, the chromospheric evapporation is explosive; if the chromosphere is in balance between electron beam bombardment and radiative loss, the column mass density at the top of chromospheric flare model can not be taken as measure from the source of electrons and then the total material between the source of electrons and the top of chromosphere can be estimated.

通过一个具体耀斑的SMM HXRBS观测结果与同时基于地面得到的Hα和CaⅡK可见光谱观测结果对比，特别是将硬x谱观测结果与色球半经验模型联立研究，结果显示出：在脉冲相上升段，硬x发射与Hα辐射之间存在对应关系；硬x线光变曲线中不同脉冲爆发分量不太可能起源于同一位置；硬x辐射所反映的高能非热电子总携带能量大于色球总辐射损失；对所研究的耀斑而言，其色球蒸发过程是爆发性的；在详细比较了非热电子色球总沉积和色球辐射损失的基础上，指出半经验模型中色球顶部柱数密度不能看成是从非热电子源度量的，从而估计了色球顶部到非热电子源之间的总物质。

The carbonizing temperature, carbonizing time and the pressure of benzene (C6H6) are the decisive factors.

结果表明：在1723K，苯的压强为1.5×10-2Pa，碳化6min后Mo-La2O3阴极碳化度达到19.7%，碳化层为疏松多孔的Mo2C组织，有利于阴极热电子发射。

SBD is the use of metal and semiconductor contact with the formation of metal - semiconductor barrier made of, so it is a thermal emission diode, with the manufacturing process of continuous improvement and the emergence of special materials, Schottky barrier gate and high-speed FET Large-scale integrated circuit and ultra-large-scale integrated circuits wide field of applications, Schottky diodes on the application of more and more widely.

SBD是利用金属与半导体接触形成的金属-半导体势垒制成的，因此，它是一种热电子发射二极管，随着制造工艺的不断完善及特殊材料的出现，肖特基势垒栅FET及其高速大规模集成电路和超大规模集成电路领域的广泛应用，肖特基二极管的应用范围也越来越广。

SBD is theuse of metal and semiconductor contact with the formation of metal- semiconductor barrier made of, so it is a thermal emission diode,with the manufacturing process of continuous improvement and theemergence of special materials, Schottky barrier gate andhigh-speed FET Large-scale integrated circuit andultra-large-scale integrated circuits wide field ofapplications, Schottky diodes on the application of more and morewidely.

SBD是利用金属与半导体接触形成的金属-半导体势垒制成的，因此，它是一种热电子发射二极管，随着制造工艺的不断完善及特殊材料的出现，肖特基势垒栅FET及其高速大规模集成电路和超大规模集成电路领域的广泛应用，肖特基二极管的应用范围也越来越广。

Device configuration, work principle and electrical current conduction mechanism of OLED are described systematically.

对于OLED的电流传导机制，可以用热电子发射模型、扩散模型和隧道贯穿模型来描述。

Based on heat electron emission theory, the relationships between workfunction of metal for electrode and externally injected unbalanced charges are obtained here.

本文基于热电子发射理论论述了电极用金属的功函数与非平衡载流子注入的关系，说明其对OLED发光性能的影响。

Compared with Wce electrode and Wcv(dopped with CeO2+Y2O3) electrode, the former is of better electrode performance.

通过与铈钨、二元复合稀土钨等电极相比较，发现：三元复合稀土钨电极有更优越的热电子发射性能。

With Death guitarist Schuldiner adopting vocal duties, the band made a major impact on the scene.

随着死亡的吉他手Schuldiner接受主唱的职务，乐队在现实中树立了重要的影响。

But he could still end up breakfasting on Swiss-government issue muesli because all six are accused of nicking around 45 million pounds they should have paid to FIFA.

不过他最后仍有可能沦为瑞士政府&议事餐桌&上的一道早餐，因为这所有六个人都被指控把本应支付给国际足联的大约4500万英镑骗了个精光。