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热电堆

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We make use of a micro-cell network model and a planar heat source, based on the atomic layer thermopile model, to obtain a time-dependence formula of the effect.

我们通过建立微电源网络模型、瞬时平面热源模型并结合原子层热电堆模型,得到了随时间变化的激光感生电压公式。

Body temperature charging ; thermobattery ; booster and steady voltage circuit ; thermopile technology ; green energy

体温充电;温差电池组;升压稳压电路;热电堆工艺;绿色能源

In addition, laser induced thermoelectric voltage effect was measured for the first time in these superlattices thin films. This experimental phenomenon illustrate that this kind of artificial atomic layer thermopile structure possesses Seebeck anisotropy.

在超晶格薄膜中首次发现了激光感生热电电压效应,说明这种人造原子层热电堆结构具有Seebeck系数各向异性。

Thermopile IR detector is one of the first thermal IR imaging device that has been studied and applied.

热电堆红外探测器是最早研究并实用化的热电型红外成像器件之一。

In this thesis, we give full consideration to the compatibility with CMOS technology and fabricate MEMS thermopile IR detector through designing a front-cut thermopile structure.

在本文中,我们充分考虑了与CMOS工艺的兼容性,通过设计一种正面开口的热电堆结构,制作了微机械热电堆红外探测器。

Laser induced thermoelectric voltage of atomic layer thermopile materials.

原子层热电堆材料的激光感生热电电压。

The invention relates to a thermopile sensor and especially a radiation thermometer or a motion detector with a thermopile sensor.

本发明涉及热电堆传感器并特别涉及带有所述热电堆传感器的辐射测温装置或运动探测装置。

The heat capacity of the cold and hot points of said thermopile together with its mounting and the heat conductivity of said mounting are co-ordinated with each other in such a way that a change in the temperature of the housing causes an equal change in the temperature of the cold and hot points, so that no temperature gradients occur inside the thermopile.

热电堆的冷端和热端及其支撑结构的热容量与支撑结构的热导率相互协调,以便壳体的温度变化引起冷端和热端同等幅度的温度变化。也就是说,所述热电堆中不存在温度梯度。

In CMOS compatible materials, the seebeck coefficient of most metals is low while that of silicon is high.

在与CMOS兼容的材料中,大多数金属材料的塞贝克系数很小,而Si的塞贝克系数要大得多,因此本文制作的微机械热电堆采用p型掺杂多晶硅-n型掺杂多晶硅作为热偶材料,这样热电堆可以具有更高的响应率。

Then 4 approaches are used for solving semiconductor thermoelectric problems are proponed:(1) solve basic semiconductor equations directly,(2) solve heat transfer equation with the fitting expressions of thermoelectric transport,(3) approximation of relaxation interval time,(4) characteristic temperature of thermoelectric-pile method.

随后,提出了求解半导体热电问题的4种方法:①直接求解半导体方程组②驰豫时间近似法③利用温差电输运系数的拟合式来求解导热方程④热电堆特征温度法。

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起初我只晓得布鲁克雷德丝是美国少男少女崇拜的偶像,后来回台湾,甚至去年在北京,居然也四处看见她的海报,才惊讶她的魅力之大。

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