热性的

Experimental accuracy and repetition of FBG temperature sensitivity and compensation were discussed.have selected several materials which has bigger coefficient of expansion to do packaging components, have made many temperature experiments, there have not flaws, such as aging, crackle, absciss layer, packaging materials have good temperature sensitivity and compatibility with optical fiber;have designed the simple and practical packaging components, have performed a serials of experiments about accuracy and repetition of FBG wave-length, have obtained the first step conclusion;have analyzed the result and made comparison between the result of different experiment, have summarized the best packaging effect and several rules to reduce mistskes.

本文所做的主要工作包括以下几个内容：一、选取了常见的热膨胀系数大的材料制作封装元件，经过多次一80℃到80℃反复测试，封装元件没有出现老化开裂、封装裂纹、空洞、离层等缺陷，封装材料具有良好的温敏稳定性及复用性，与光纤相容性较好；二、对光纤光栅进行简单、实用的封装处理，就封装效果的优劣性、波长测量的准确度、重复性和封装时产生的波长损失等方面进行了一系列的实验，得出了初步的结论；三、对温敏和温度补偿式封装的实验数据进行了详细的分析和对比，从数字上对温变过程中光纤光栅中心波长的改变及温变曲线进行了定量的分析，在大量实验数据分析结果的基础上，总结出哪种材料封装效果更好，以及如何有效的减小实验误差。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

In this project, we study the theory of higher order differential equations in Banach spaces and related topics. We solve an open problem put forward by two American Mathematicians and two Italian Mathematicians concerning wave equations with generalized Weztzell boundary conditions, introduce an existence family of operators from a Banach space $Y$ to $X$ for the Cauchy problem for higher order differential equations in a Banach space $X$, establish a sufficient and necessary condition ensuring $ACP_n$ possesses an exponentially bounded existence family, as well as some basic results in a quite general setting about the existence and continuous dependence on initial data of the solutions of $ACP_n$ and $IACP_n$. We set up quite a few multiplicative and additive perturbation theorems for existence families governing a wide class of higher order differential equations, regularized cosine operator families, regularized semigroups, and solution operators of Volterra integral equations, obtain classical and strict solutions having optimal regularity for the inhomogeneous nonautonomous heat equations with generalized Wentzell boundary conditions, gain novel existence and uniqueness theorems,which extend essentially the existing results, for mild and classical solutions of nonlocal Cauchy problems for semilinear evolution equations, present a new theorem with regard to the boundary feedback stabilization of a hybrid system composed of a viscoelastic thin plate with one part of its edge clamped and the rest-free part attached to a visocelastic rigid body. Also we obtain many other research results.

在本研究中，我们对Banach空间中的高阶算子微分方程的理论以及相关理论进行了深入研究，解决了由美国和意大利的四位数学家联合提出的一个关于广义Wentzell边界条件下的波动方程适定性的公开问题，恰当地定义了Banach空间中的高阶算子微分方程Cauchy问题的算子存在族及唯一族，建立了齐次和非齐次高阶算子微分方程Cauchy问题适定性的判别定理，获得了关于高阶退化算子微分方程的算子存在族、正则余弦算子族、正则算子半群、Volterra积分方程解算子族的乘积扰动和混合扰动定理，得到了关于以依赖于时间的二阶微分算子为系数的一大类非自治热方程非齐次情形下的时变广义Wentzell动力边值问题的古典解、严格解的最大正则性结果，获得了半线性发展方程非局部Cauchy问题广义解和经典解存在唯一的判别条件，从实质上推广了现有的相关结果；得到了一部分边缘固定而另一部分附在一粘弹性刚体上的薄板构成的混合粘弹性系统的边界反馈稳定化的新稳定化定理，还建立了一系列其他研究结果。

In this dissertation , Physical and chemical properties of raw material was studied first, then sodium model-modification of it was researched. Next, preparation of FILM in traditional process using montmorillonite after model-modification was in research. After that, we studied the preparation of PILM in hydrothermal process using montmorillonite without being model-modified. Finally, products in experiments were characterized and Analyzed by XRD, IR, DTA.

根据目前国内外的发展现状，针对存在的问题，本课题做了以下几个方面的研究：首先对采用的基质材料的物化性进行了研究；然后研究了其钠化改型的工艺方法；接下来研究钠化后的蒙脱石用常规工艺合成PILM；在此基础上提出并研究了水热法制备PILM和其柱化剂的新工艺；最后对制备的试样通过XRD、IR、DTA等进行了分析和表征。

Provided are carbide derived carbon materials prepared by thermochemically reacting carbide compounds and a halogen containing gas and extracting all atoms of the carbide compounds except carbon atoms, wherein the intensity ratios of the graphite G band at 1590 cm -1 to the disordered-induced D band at 1350 cm-1 are in the range of 0.3 through 5 when the carbide derived carbon is analyzed using Raman peak analysis, wherein the BET surface area of the carbide derived carbon is 1000 m 2 /g or more, wherein a weak peak or wide single peak of the graphite (002) surface is seen at 2 = 25 DEG when the carbide derived carbon is analyzed using X-ray diffractometry, and wherein the electron diffraction pattern of the carbide derived carbon is the halo pattern typical of amorphous carbon when the carbide derived carbon is analyzed using electron microscopy.

提供了得自碳化物的碳，其通过热化学反应碳化物化合物和含卤族元素的气体并提取除了碳原子之外的碳化物化合物的全部原子制备，其中当使用拉曼峰分析法分析该得自碳化物的碳时，在1590cm -1 的石墨G波段与在1350cm -1 的无序引发的D波段的强度比为0.3至5，其中该得自碳化物的碳的BET表面积是1000m 2 /g或更大，其中当使用X射线衍射法分析该得自碳化物的碳时，在2θ＝25°观察到石墨(002)面的弱峰或宽单峰，以及其中当使用电子显微法分析该得自碳化物的碳时，得自碳化物的碳的电子衍射图是代表无定形碳的晕图案。该发射体具有良好的均匀性和长寿命。可以使用比用于生产常规碳纳米管的方法更廉价的方法制备发射体。

The effects of strain rate on plastic formation and dynamic recrystallization of 7050 aluminum alloy were discussed. The results show that the deformation of the specimen is inhomogeneous, and the effective strain in the center of the specimen is maximum. The deformation inhomogeneity increases with the increase of strain rate. The effective stress of specimen is inhomogeneous. As the strain rate increases, the minimum stress value moves from the drum-shaped region to the heart of specimen. The standard deviation of dynamic recrystallization grain size decreases with the increase of strain rate.

模拟结果表明，热变形过程中，试样的各个部位的变形分布不均匀，心部的等效应变最大，变形的不均匀性随应变速率的增大而增大，但是变化的程度不大；试样内部各部位的应力大小分布不均匀，随应变速率的增大，最小应力值由自由变形的鼓形区域逐步向心部移动；动态再结晶晶粒尺寸标准偏差随应变速率的增加而减小。

Diamonds began growth when "Jiangnan continent" combined to Yangtze craton, the growth and residence average temperature T〓 was about 1200℃; Diamonds were mutil-stages growth and interruption caused by temperature and pressure varied during Yangtze craton activities; Diamonds were etched when the magma did not erupt on the surface and form failed magma in mantle; during the later growth term T〓＜1050℃, the type ⅠaA diamonds formed unclear and growth; Before the host magma erupted T〓＜0.5Ma, T〓A＜850℃, the type Ⅰb diamond formed unclear and growth; Few diamonds were brittle deformation during growth term, some were plastic deformation after growth; when the host magma erupted on the surface and weathered to alluvial deposit, diamonds surfaces formed green spots caused by irradiation, then most of green spots became to brown spots during a mid-temperature metamorphism; modern river reform it to alluvial deposit in the minute valley again.

在扬子地台&江南古陆&克拉通化时，金刚石开始生长，其生长与保存的平均温度T〓在1200℃左右；期间由于地台的活动，生长的温度压力条件发生了多次变化，使金刚石出现多次生长、停顿；夭折的母岩上侵活动使金刚石受到熔蚀作用；在金刚石形成的晚期，T〓值下降到1050℃以下，出现了另一次金刚石的生长期，在临近金刚石母岩上侵时T〓＜0.5Ma，温度进一步降到850℃以下，使Ⅰb型金刚石得以保存；在金刚石形成期间还有过碎性变形发生；金刚石形成后部分样品经过了塑性变形；金刚石在上侵过程中，遭受了强烈的熔蚀；在母岩露出地表，形成沉积砂矿时，受到了放射性物质的辐照，先形成表层的绿色斑点、壳层，后经过中低温的热变质作用，大部分绿色转化为褐色；现代河流作用对沉积砂矿进一步改造，形成现在的细谷型砂矿。

ABSTRACT The diffused phase transition and frequency dispersion of Pb-based complex perovskite relaxor ferroelectrics of PZN, PMN etc. were studied by the measurements of spectum of dielectric permittivity with temperature at different frequencies as well as by the means of differential thermal analysis and ferroelectric hysteresis technique. It was found that there are various polarization relaxors which cause DPT characteristics.

本文利用介温谱的测量，差热分析和电滞回线对以PZN，PMN为代表的铅系复合钙钛矿型弛豫铁电体的相变弥散和频率色散性等弛豫特性进行了分析研究，对产生弛豫的根本原因提出了新的看法，认为这类材料的DPT特性并不是一种由成份及结构不均匀的统计分布所造成的&准&弛豫现象，而是由材料本身弛豫机制所致。

According to the clear water experiment, aeration performance of the new equipment is good with high total oxygen transfer coefficient and oxygen utilization ratio.

曝气设备的动力效率在叶轮转速为120rpm～150rpm时取得最大值，此时氧利用率和充氧能力也具有较高值。

The environmental stability of that world - including its crushing pressures and icy darkness - means that some of its most famous inhabitants have survived for eons as evolutionary throwbacks, their bodies undergoing little change.

稳定的海底环境─包括能把人压扁的压力和冰冷的黑暗─意谓海底某些最知名的栖居生物已以演化返祖的样态活了万世，形体几无变化。