热发光

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

To examinate the thermal properties by TGA、DSC and figure out the maximum decompose temperature which survey the range of liquid crystal temperature. We synthesize conjugated polymer successfully and these emitted blue fluorescence. Hope this experiments will supply well-contribution in field of organic light-emitting diodes.

以TGA、DSC测定其热性质，并了解到由TGA的5%热重损失温度再进行测出液晶温度范围，我们成功的合成出具有良好的加工性的共轭性分子，发光性质都出现在蓝光领域，愿在有机发光二极体的领域上有重大的贡献。

The study of the mineralogy indicates:(1)Few impurity and poor sulfur in thestibnite of Shalagang antimony.(2)From the stibnite's cell parameter, it finds that thecell parameter of Shalagang antimony's stibnite approachs the standard value. And iteduces the forming temperature of the stibnite is between 150℃～200℃.(3)Thequartz in different period have different thermoluminescence curve, and thethermoluminescence curves of the quartz in rich ore havethe characters of gently curve, unconspicuous peak and the luminous intensity has therelationship of positive correlation with the temperature.

矿物学研究发现：(1)沙拉岗锑矿床辉锑矿以所含杂质少，贫硫为主要特征；(2)利用晶胞参数测定得出，沙拉岗锑矿床辉锑矿晶胞参数接近于标准值，推算形成温度在150℃～200℃之间；(3)不同期次石英具有明显不同的热释光曲线，其中主成矿期石英的热释光曲线以发光曲线平缓，峰位不明显，发光强度随温度升高而增强为特征。

Mineralogic characteristics of quartz of this gold deposit, such as REE, fluid inclusion, chemical composition, unit cell parameter, infrared absorption spectrum and thermoluminescent effect, were studied systematically in this article,and some valuable information of genetic and prospecting criteria are concluded.

本文较系统地研究了该金矿床石英的稀土元素、包裹体测温、化学成分、晶胞参数、红外吸收光谱及热发光效应等矿物学特征，总结出了有重要参考价值的成因信息和找矿标志。认为康古尔金矿床主要系中深成中低温热液成因，成矿物质具深源性，直接来自围岩火山岩。

Materials and Methods: Under the best annealing condition treatment and making sure the surface characteristics and cooling process after vacuum annealing had no significant effects to thermoluminescent response, TLD samples were put into the ABS TLD holder in the vacuum chamber.

材料与方法：将以最佳回火条件回火完成之CaF2：Dy (TLD-200)及CaF2： Tm (TLD-300)，确保其表面性质及真空回火后冷却过程对热发光反应无影响后，将其置於真空腔内之一压克力置装器内。

In radiation dosimetry there are numerous limitations associated with the measurement of isodose curves and depth-dose distributions in high gradient regions of beams by using conventional measuring systems, such as ionization chambers, diode dosimeter, thermoluminescent detectors, and radiographic films.

在辐射剂量学中，利用传统的剂量计例如游离腔、二极体侦检器、热发光剂量计、感光胶片…等，来量测等剂量曲线或是深度剂量分布都有其适用的范围及其限制。

The accuracy and sensitivity of TLD-100H dosimeters were also measured.

建立热发光剂量计(TLD-100H)的准确度及剂量响应灵敏度，其误差须小於3%。

Results : The dose measured in buildup region by using the ultra-thin thermoluminescence dosimeters and Markus chamber are in good agreement and the former is suitable for surface dose measurements in clinical application.

结果：增建区剂量量测方面，0.1 mm厚度之热发光剂量计之测量结果与Markus游离腔有较好的吻合度，適用於临床表面剂量的量测。

For normal incident beams, the dose measured in buildup region were corrected with suitable correction equations for plane-parallel ionization chamber and then evaluated the accuracy of the dose measurements in buildup region by using various thickness thermoluminescence dosimeters.

在垂直入射光子射束量测方面，Markus 游离腔增建区剂量量测数据，均作適当修正，以得到较准確的百分深度剂量值，隨后与不同厚度之热发光剂量计量测值做评估比较，以確认其不確定度。

For normal incident beams, the dose measured in buildup region were corrected with suitable correction equations for plane-parallel ionization chamber and then evaluated the accuracy of the dose measurements in buildup region by using various thickness thermoluminescence dosimeters.

在垂直入射光子射束量测方面，Markus 游离腔增建区剂量量测数据，均作适当修正，以得到较准确的百分深度剂量值，随后与不同厚度之热发光剂量计量测值做评估比较，以确认其不确定度。

We have no common name for a mime of Sophron or Xenarchus and a Socratic Conversation; and we should still be without one even if the imitation in the two instances were in trimeters or elegiacs or some other kind of verse--though it is the way with people to tack on 'poet' to the name of a metre, and talk of elegiac-poets and epic-poets, thinking that they call them poets not by reason of the imitative nature of their work, but indiscriminately by reason of the metre they write in.

索夫农 、森那库斯和苏格拉底式的对话采用的模仿没有一个公共的名称；三音步诗、挽歌体或其他类型的诗的模仿也没有——人们把&诗人&这一名词和格律名称结合到一起，称之为挽歌体诗人或者史诗诗人，他们被称为诗人，似乎只是因为遵守格律写作，而非他们作品的模仿本质。

The relationship between communicative competence and grammar teaching should be that of the ends and the means.

交际能力和语法的关系应该是目标与途径的关系。