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In this paper,a new method of measuring liquid three dimensional flow velocity by rotaining the probe in the plane was submitted basing elaborate analyzing of hot film anemometer.

本文针对热膜流速仪元件的工作原理提出了在平面旋转测量液体三维流速的方法,并测量了大型精馏塔板液相单相三维流场。

Typical electrical code requirements include classification for instrument s and/or limiting the surface temperature of heated resistance elements to a specified fraction of the autoignition temperature for the flammable gas.

典型的电力法规要求包括器具的分类,和/或把热电阻元件的表面温度限制在易燃气体的自燃温度的一个指定的分数。

Typical electrical code requirements include classification for instruments and/or limiting the surface temperature of heated resistance elements to a specified fraction of the autoignition temperature for the flammable gas.

典型的电力法规要求包括器具的分类,和/或把热电阻元件的表面温度限制在易燃气体的自燃温度的一个指定的分数。

La 0.67 Ca 0.33 MnO 3 epitaxial thin films were used as the photosensitive element of the bolometer, and the optical response of this device to the He\|Ne laser and the blackbody were measured.

用外延法生长的La0 。67Ca0 。3 3 MnO3薄膜作为测辐射热仪的辐射敏感元件,测量了该器件对黑体和He Ne激光器的光学响应。

Thermochromic properties of vanadium dioxide thin films are applied to solar energy materials, photoeletric switch and bolometer materials for the uncooled microbolometers due to their high temperature coefficient of resistance at room temperature.

中文摘要具热致变特性之VO2薄膜因在室温附近有明显的相转变现象,同时发生光电性质的急遽的转变,且在室温之下有较高的电阻温度系数,所以在一系列氧化钒化合物中格外被受瞩目;VO2因这些性质而被广泛应用於太阳能控制材料、电学开关、光学开关及非冷却型辐射热感测器等半导体元件之中。

Thin-walled tube with closed section is commonly used in large space structures. In order to calculate the time-dependent temperature fields in these structures subjected to heat flux and emitting thermal energy by radiation, the temperature gradients along both the axes and circumferences of the tubes should be considered.

薄壁闭口管是大型空间结构中的常用元件,为准确地计算以其为组件的空间结构在太空辐射换热条件下的瞬态温度场,必须同时考虑沿管轴向与横截面周向两个方向的温度梯度。

This thesis made simulations on the power consumption, interface concavity, the crucible and the heater temperature.

本论文针对各热场元件对能耗、界面凹陷、坩埚和加热器温度分别模拟分析。

By using a transient method and fine constantan thermocouples of 0.2mm in diameter,the effective thermal conductivities of sulfur-resisting methanation catalysts have been measured between 313K and 533K.

本文采用动态法原理,用单丝直径为0.2mm的铜-康铜热偶作为测温元件,在313~533K温度区间,测定了耐硫甲烷化催化剂的有效导热系数。

This paper described the design of constant current discharging device based on thermal sensitive element of PTC,including discharging battery at constant current and limiting current simulation load of charging sets.

文章介绍了一种采用PTC热敏元件设计的恒流放电装置,着重介绍了对蓄电池组的恒流放电和作为充电机的限流模拟负载的工作原理,实现对蓄电池恒流放电。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业,不在行,求高手帮忙。谢谢!具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

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Finally, according to market conditions and market products this article paper analyzes the trends in the development of camera technology, and designs a color night vision camera.

最后根据市场情况和市面上产品的情况分析了摄像机技术的发展趋势,并设计了一款彩色夜视摄像机。

Only person height weeds and the fierce looks stone idles were there.

只有半人深的荒草和龇牙咧嘴的神像。

This dramatic range, steeper than the Himalayas, is the upturned rim of the eastern edge of Tibet, a plateau that has risen to 5 km in response to the slow but un stoppable collision of India with Asia that began about 55 million years ago and which continues unabated today.

这一引人注目的地域范围,比喜马拉雅山更加陡峭,是处于西藏东部边缘的朝上翻的边框地带。响应启始于约5500万年前的、缓慢的但却不可阻挡的印度与亚洲地壳板块碰撞,高原已上升至五千米,这种碰撞持续至今,毫无衰退。