漏电

This simple model can be used to understand the occurring mechanism of stress induced leakage current.

结果表明，中性陷阱对隧穿电流的影响不能被忽略，中性陷阱的存在使隧穿电流增加，并且通过这个简单的模型能够理解应变诱导漏电流的产生机制。

The generation mechanism of stress induced leakage current in flash memory cell is studied by experiments.

通过实验研究了闪速存储器存储单元中应力诱生漏电流产生机理。

aining at high impedance weak signal measurement,the relations among measuring precision,input impedance and input bias current,the guard technology is applied to design a measuring circuit with guard circuit,adding a guard potential to low-impedance nodes of circuit,the effect of leakage current is reduced.using spice simulation and validates that guard circuit can increase the input impedance of the system and lower the input bias current,the results show that the guard circuit provids a valuable solution for high accuracy measurement of the high impedance weak signal.

摘 要：针对高阻抗微弱信号测量问题，对测量精度与系统输入阻抗、输入偏置电流的关系进行分析，应用保护技术设计了带保护电路的测量电路，将电路中的低阻抗节点加上保护电势，减小漏电流的影响。通过pspice仿真分析，验证保护电路能提高测量系统的输入阻抗和降低输入偏置电流，结果表明保护电路技术能实现对高阻抗微弱信号的高精度测量。

A switch leakage current of less than the work of the machine input current

a 漏电开关的工作电流小于机器的输入电流

The readout system can efficiently reduce the influences from leakage current, input offset, process parameter instability, and other causes. The value of input weak current signal can be obtained simply through demarcation.

读出电路系统可以有效地减小漏电流、输入失调、外来干扰和工艺参数不稳定等带来的影响，通过简单的标定和换算即可得到微弱电流信号的大小。

To prevent the current leakage of the ionization chamber a three co-axis insulator is used, and the result is good.

为防止由于漏电造成的信号损失，本文采用了三同轴绝缘子的方案很好地实现了电离室的绝缘。

And ITO can be used in conventional island in structure to eliminate schottky leakage current.

并且可利用在传统光屏蔽结构中，达到抑制萧特基漏电的效果。

However, care must be exercised when handling the device to avoid strong static fields that may degrade a diode junction, causing increased input leakage currents.

但是，必须注意在处理设备，以避免强烈的静态字段，可能会降低二极管的交界处，造成漏电流增加投入。

Measurements of BE and BC junction diode properties at different temperatures have indicated that the rapid growth of BC junction leakage current with temperature is the cause of HBT degradation.

通过测量BE结和BC结在各温度的二极管特性，发现高温下BC结漏电流急剧上升，导致HBT性能退化。

For the traditional diode string, the parasitic p-n-p bipolar junction transistor devices in the diode string will induce a large leakage current into the substrate, especially under high temperature condition.

因为寄生元件的存在，传统的二极体串将会产生严重的基极漏电流问题，尤其是在高温的状态下。

Lugalbanda was a god and shepherd king of Uruk where he was worshipped for over a thousand years.

Lugalbanda 是神和被崇拜了一千年多 Uruk古埃及喜克索王朝国王。

I am coming just now,' and went on perfuming himself with Hunut, then he came and sat.

我来只是现在，'歼灭战perfuming自己与胡努特，那麼，他来到和SAT 。