漂移

Elastic collision and inelastic collision are considered in oxygen molecule, nitrogen molecule by electron impart. The mail simulation results were as follow:(1)The variations of drift velocity and the average energy of electron with the E/N in O2 and N2 are obtained. The number of electrons for excitation, ionization, dissociation and dissociative ionization collision with the E/N and the energy of electron are analyzed emphatically.

考虑了各种弹性和非弹性碰撞过程，在纯氧气、纯氮气中，给出了不同简化场E／N条件下的电子漂移速度和平均电子能量的变化；着重分析了激发、电离、分解及分解电离碰撞的粒子数随E／N、电子能量的变化，同时计算了激发发射光谱的波长。

Taking two major storms in October-November 2003 for example,the effects of plasma transportation,which is caused by equatorial disturbance electric field,on low-latitude storm time ionospheric variations at given locations were studied near 105°E.

研究表明，电场能引起电离层foF2的复杂变化。在2003年11月19~24日孤立磁暴事件中，扰动电场在电离层暴初期起主导作用，向上和向极漂移的等离子体造成赤道异常峰南侧海口站电离层负暴和北侧重庆及兰州站正暴。

This larger electron drift energy is related to the lower magnetic field necessary for krypton operation.

这个能量较大的电子漂移与磁场下氪必要行动。

The discharge mechanism of the avalanche in these gases has been analyzed. The variation patterns and impact factors of their effective ionization coefficients, electron drift velocities and diffusion coefficients have been given. The transportation of electrons is closely related to that of ions.

为验证模拟结果的正确性，本文采用PT法获得的SF〓／N〓、SF〓／CO〓和SF〓／Kr的实验结果和模拟结果进行对比，分析了它们的电子崩发展特点，给出了其有效电离系数、电子漂移速度和扩散系数的变化规律以及影响因素。

The values obtained in thepresent study for the electron energy distribution function,drift velocity,ionizationcoefficient and attachment coefficient,etc.,are calculated and compared with theexperimental results reported in the literature,and the comparison is also carried outwith the values obtained from the two different types of fields.

应用Monte Carlo模拟法研究了氧气放电的电子参数，得到了在均匀电场中的电子能量分布、平均能量、漂移速度、电离系数、附着系数、迁移率及扩散系数随时间、电场强度的变化关系，并与文献上的实验结果进行了比较。

High-frequency and high power electronic or microwave devices, because of their excellent properties such as wide band gap, high electron saturation drift velocity, low dielectric constant, high thermal conductivity, good chemical and thermal stability, and so on.

同时由于GaN基材料具有电子漂移饱和速度高、介电常数小、导热性能好、化学和热稳定性好等特点，也非常适合于制作高温、高频及大功率电子器件。

Theresults show that the electron mean drift velocity is affected by the cathode radius, theimpedance of the load diode, the inner radius of vanes and the input voltage.

结果表明电子平均漂移速度决定于阴极杆半径、负载二极管阻抗、阳极慢波叶片内径和输入电压。

The transport and current-voltage properties of submicron GaAs MESFET device are calculated firstly based on the nonparabolic effective mass energy band model and Monte Carlo method which includes all major scattering mechanisms. The electron drift velocity, electric field and the non-homogeneity of mobility distribution in device are obtained. The influences of different gate lengths to electron drift velocity and drain current are analyzed.

根据对以GaAs、GaP和InP为主的Ⅲ-V族化合物半导体材料的能带结构和散射机制的分析，采用蒙特卡罗模拟方法，研究了亚微米尺寸的OaAs MESFET器件的电子密度分布、电场强度、漂移速度和迁移率分布等输运性质，以及栅长对器件性质的影响和电流电压特性。

The GaAs, InP-based III-V compound semiconductors, which are known as their wide band-gaps, direct-band transition, high photoelectric conversion efficiency and high saturated electron drift velocity and mobility, become increasingly important and have been widely used in microelectronics and optoelectronics.

以GaAs，InP为主Ⅲ-V族化合物半导体材料具有很宽的带隙，大都为直接跃迁型能带，光电转换效率较高，以及具有很高的饱和电子漂移速度和迁移率。

Drift electron mobility, the Hall factor and Hall mobility in GaN are calculated according to Mattiessen's rule as a function of temperature for carrier concentrations with the compensation ration as a parameter on the basis of taking into account the individual average scattering momentum relaxation time of four scattering mechanisms, namely, ionized impurity scattering, polar mode optical scattering, acoustic piezoelectric scattering and acoustic phonon deformation potential scattering which have an effect on electron mobility of GaN.

考虑了对纤锌矿型氮化镓低场电子输运影响最为显著的4种散射机制－电离杂质散射，极化光学波散射，声学波压电散射和声学声子形变势散射的单个平均动量驰豫时间，采用Mattiessen's rule计算了不同补偿率以及不同载流子浓度条件下，氮化镓电子漂移迁移率，霍耳因子以及霍耳迁移率随温度的变化。

With Death guitarist Schuldiner adopting vocal duties, the band made a major impact on the scene.

随着死亡的吉他手Schuldiner接受主唱的职务，乐队在现实中树立了重要的影响。

But he could still end up breakfasting on Swiss-government issue muesli because all six are accused of nicking around 45 million pounds they should have paid to FIFA.

不过他最后仍有可能沦为瑞士政府&议事餐桌&上的一道早餐，因为这所有六个人都被指控把本应支付给国际足联的大约4500万英镑骗了个精光。