溅射

In this dissertation, high quality ZnO and AZO films were deposited on SiO_2/Si and quartz glass substrates by RF magnetron sputtering.

本论文主要工作是研究如何利用简便的射频磁控溅射技术在SiO_2/Si和石英玻璃衬底上制备高质量的ZnO及其掺Al薄膜。

Cu/Zr nano-multilayer films are prepared by Direct Current magnetron sputtering in the silex substrate, and the box-type furnace is used to anneal. Micro-sclerometer, X-ray Diffractometer and Scanning Probe Microscope are used to analyze the mechanical performance and microstructure of Cu/Zr nano-multilayer films. The relation of process parameters and performance is investigated.

本文利用直流磁控溅射方法在石英玻璃基片上制备了一系列自支撑Cu/Zr纳米多层膜，使用箱式电炉对多层膜进行退火处理，利用显微硬度计、X射线衍射仪、扫描探针显微镜表征了多层膜的力学性能与微观结构，研究了不同工艺参数对纳米多层膜性能的影响。

It is found that adatom yields, vacancy yields and sputtering yields will all increase along with the energy of incident atoms getting higher. Meanwhile, the quantities as well as distribution of adatom and vacancy play an important role in film growth.

表面吸附原子、空位缺陷以及溅射产额均随入射原子能量的增加而增加；表面吸附原子与空位缺陷的数量与分布，对于薄膜生长模式起着重要作用。

In the meanwhile, we summarized the inspective methods and principles of the DLC: N films such as Raman spectrum, X-ray photoelectron spectrum, infrared absorption spectrum, atomic force microscope, scanning electron microscope.

第三章介绍了射频磁控溅射方法制备薄膜的步骤及设备操作的步骤，并制备了DLC薄膜及DLC：N薄膜，对其成分和结构进行了对比。

Undoped and indium-doped zinc oxide films are deposited on Si substrates by radio frequency reactive sputtering technology.

采用射频反应溅射技术在硅(100)衬底上制备了未掺杂和掺In的ZnO薄膜。

The preparation of AIN thin films has been carried out by chemical vapor deposition , reactive sputtering deposition and pulsed-laser ablating deposition etc.

当前制备AIN薄膜的方法主要有化学气相沉积法、有机化合物气相沉积法、射频溅射法和激光脉冲熔融沉积法等，但所有的这些方法都有各自的不足。

Single-crystalline GaN nanowires have been synthesized on Si(111) substrates by magnetron sputtering through ammoniating the Ga2O3/Nb films at 900 °C in a quartz tube.

中文摘要：采用射频磁控溅射技术在硅衬底上制备Ga2O3/Nb薄膜，然后在900 °C下于流动的氨气中进行氨化制备GaN纳米线。

Rare earth metal seed Tb was employed for the growth of GaN nanorods. GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(111) substrates. X-ray diffraction results indicated that the nanorods were hexagonal GaN.

使用稀土元素Tb作催化剂，通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜，成功制备出GaN纳米棒。X射线衍射测试显示，GaN纳米棒具有六方结构。

Preparation and microstructure GAMs were successfully embedded in SiO〓 thin film by magnetron r. f. cosputtering technique. The microstructure of thin films were characterized by XRD and TEM.

一、薄膜的制备和显微结构采用射频磁控共溅射法成功地制备了GaAs颗粒均匀地弥散在SiO〓介质中的薄膜，薄膜中GaAs颗粒所占的体积分数高达15％以上，GaAs颗粒的平均直径为纳米量级。

Carbon-doped TiO2 thin films were prepared by direct current reactive magnetron sputtering at room temperature in an Ar/O2 ambience, using a titanium target incrusted with graphite pieces. The films as prepared were characterized by X-ray diffraction, UV-Vis transmission spectra, and photoelectrochemistry methods.

室温下通过直流反应磁控溅射的方法，利用碳钛镶嵌靶在Ar/O2气氛中制备了碳掺杂纳米TiO2薄膜，并通过X射线衍射、UV-Vis透射光谱以及光电化学的方法对薄膜进行了表征。

Finally, according to market conditions and market products this article paper analyzes the trends in the development of camera technology, and designs a color night vision camera.

最后根据市场情况和市面上产品的情况分析了摄像机技术的发展趋势，并设计了一款彩色夜视摄像机。

Only person height weeds and the fierce looks stone idles were there.

只有半人深的荒草和龇牙咧嘴的神像。