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Then CIGS thin films and devices are prepared by RF sputtering and selenium.

然后,是CIGS薄膜及器件的射频溅射后硒化法制备。

Electrochemical characteristic of ITO/TiO2 electrode under UV irradiation was investigated using the method of cyclic voltammetry.

采用射频磁控溅射技术制备纳米TiO_2薄膜、SiO_2-TiO_2复合薄膜以及金属掺杂的M-TiO_2薄膜,并研究其光催化性和光致亲水性。

The dielectric constant-voltage curves and polarization hysteresis loops of BST thin films with different thicknesses were investigated.

采用射频磁控溅射法制备了Ba.6Sr0.4TiO3薄膜,研究了不同膜厚的BST薄膜的介电偏压特性曲线和电滞回线。

And the devices'properties and improve the properties to prepare the artificial boundary. The bi-epitaxial YBCO superconducting film with 45°grain boundary in a-b plane was made for the first time in China in this article by magnetic sputtering instrument that was designed and fabricated by ourselves. The x-ray θ~ 2θ scan 、Ф scan、rocking curve、non-symmetry diffraction and SEM、 TEM、AES etc. were utilized in the study.

为此,本工作采用自行设计制造的全金属密封超高真空磁控溅射设备,利用x射线θ~2θ扫描、Ф扫描、摇摆曲线、非对称衍射及SEM、TEM、AES等分析测试手段,在国内首次、也是至今唯一的一家,制得a—b平面内具有45°人工晶界的双外延YBCO超导薄膜,并进而得到双外延晶界Josephson结。

Secondly, we deal with the ripple of start and end points to represent the flow effect of waterfall. Finally we add the spattering model in the system to simulate the ordinary cartoon spattering scene of obstacle and the obstacle with big frontispiece.

对瀑布起点和终点的波特别处理,表现出水的流动效果,同时增加了溅射模型,使系统能够更好地模拟出一般障碍物,以及正面大的障碍物溅水等常见的动画场景。

GaN nanorods are successfully synthesized on Si(111) substrates with magnetron sputtering through ammoniating Ga2O3/Co films at 950℃.X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and Fourier-transform infrared spectroscopy are used to characterize the samples.

采用磁控溅射技术先在Si衬底上制备Ga2O3/Co薄膜,然后在950℃下流动的氨气中进行氨化反应制备GaN纳米棒。应用X射线衍射、扫描电镜、傅里叶红外吸收光谱、选区电子衍射和高分辨透射电子显微镜对样品进行表征。

RO_2·8% Y_2 O_3 was deposited by rf magnetron sputtering on NiCrAlY bond coat,thermal cyclingand fused salt effect experiments were made under the condition of 1100℃ room temperature 1100℃ cold water , and 900℃ room temperature,and were investigated by XRD and SEM,The results showthat ZrO_2·8% Y_2 O_3 deposited appears mainly as cubic and a little monoclinic phase and tetragonalphase.

将ZrO_2·8%Y_2O_3用射频磁控溅射技术沉积在NiCrAlY底涂层上,进行ll00℃→室温,1100℃→冷水和900℃→室温等热周期和熔盐作用的试验。随后进行X-射线衍射分析和扫描电镜(8EM)观察。结果表明,沉积态的氧化锆层主要为立方相和少量单斜相及四方相。

In2O3 thin films were prepared on glass substrates by radio frequency magnetron sputtering. The structural, electrical and optical characteristics of In2O3 films were investigated by atomic force microscope, X-ray diffraction, X-ray photoelectron spectroscope, UV-Visible spectrophotometer and Hall effect measurements.

采用射频磁控溅射法在玻璃衬底上制备氧化铟薄膜,通过测试原子力显微镜、X射线衍射、X射线光电子谱、紫外可见分光光度计以及霍尔效应,研究了氧化铟薄膜的结构和光、电特性。

Nanocrystalline silion have many difference from bulk silicon, such as structure, the capability of optics and photoelectricity. It shows high potential on light-emitting devices, photodetector, optoelectronic devices and sensor. Si-rich silica was deposited by RF magnetron sputtering and the film dopped with aluminium is deposited too.

本文采用射频磁控溅射方法制备富硅二氧化硅薄膜,并在此基础上掺入单质铝,经高温退火,自组装生长纳米硅颗粒,并对薄膜进行了拉曼散射、X射线衍射、扫描电镜、傅立叶红外吸收光谱和光电子能谱的测定,对吸收光谱也进行分析。

At present, we are able to carry out the following processing operations: vacuum sputtering plating of aluminum, nickel, titanium, indium, copper and EMI sputtering plating of all kinds of metals, spray painting of overprint varnishes, coloration using the plating resisting silver polish, gun smoke color, gold-imitating color and rainbow color with adjustable brightness.

目前,我们能进行的加工种类有:真空溅镀铝、镍、钛、铟、铜EMI溅射镀膜等各种金属,喷涂罩光油、防电镀银油、枪色、仿金、七彩及各种颜色的上色,亮哑可调。

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Finally, according to market conditions and market products this article paper analyzes the trends in the development of camera technology, and designs a color night vision camera.

最后根据市场情况和市面上产品的情况分析了摄像机技术的发展趋势,并设计了一款彩色夜视摄像机。

Only person height weeds and the fierce looks stone idles were there.

只有半人深的荒草和龇牙咧嘴的神像。

This dramatic range, steeper than the Himalayas, is the upturned rim of the eastern edge of Tibet, a plateau that has risen to 5 km in response to the slow but un stoppable collision of India with Asia that began about 55 million years ago and which continues unabated today.

这一引人注目的地域范围,比喜马拉雅山更加陡峭,是处于西藏东部边缘的朝上翻的边框地带。响应启始于约5500万年前的、缓慢的但却不可阻挡的印度与亚洲地壳板块碰撞,高原已上升至五千米,这种碰撞持续至今,毫无衰退。