溅射

ZhuangDa Technology and Industry Co., Ltd, founded in November 2006, is a new high-tech joint venture based on the unique technology and CFUBMSIP equipment researched and developed jointly by Xi'an University of Technology and TEER Coatings Co., Ltd, technically supported by the mature technology of our brother company, QinRen Metal Technology Co., Ltd.

壮大材料科技有限公司是采用英国 TEER 镀层科技有限公司和西安理工大学共同开发研制的磁控溅射设备，依托兄弟公司(东莞秦人金属科技有限公司)的成熟技术支持下经营的一家专业化镀层的新型高科技合资公司。

The invention relates to a silver low E coat used for glass which is temperable and can coat on glass through sputtering technology.

本发明涉及一种用于玻璃的银低E涂层，该涂层是可回火的并且可以通过溅射工艺涂覆在玻璃上。

With this method,controllable,clean,tensionless nano-contacts for spin polarization probing can be obtained.

该方法采用聚焦粒子束刻蚀和磁控溅射，可以获得可控的、干净的、无应力的纳米接触用于自旋极化探测。

The photoelectric property and thermoelectromotive force of CdIn_2O_4 or CIO thin film deposited by way of DC reactive magnetron sputtering process were investigated, as well as the effects of the O_2 concentration in reacting gas and annealing process on the property of CIO films.

研究了直流磁控反应溅射制备三元化合物CdIn2O4薄膜的光电性质和温差电动势，及其反应气体中氧浓度和退火处理对CIO膜性质的影响。

The Si-rich SiO2／p-Si structure has been fabricated with two-target alternative magnetron sputtering technique.After the Si-rich SiO2／p-Si sample having been scored by diamond tip on the front surface and annealed at 800℃ in N2 the photoluminescence spectrum is found quite different from that from the unscored one,which having been annealed in the same condition.

以磁控溅射方法于p-Si上淀积富硅二氧化硅，形成富硅二氧化硅／p-Si结构，用金刚刀在其正面刻划出方形网格后在N2气氛中退火，其光致发光谱与未刻划的经同样条件退火的对比样品的PL谱有很大不同。

The results can be summarized as follows:(1) By laser ablating a heterogeneous reaction system which wasconsisted of solid graphite, liquid and gaseous chloroform, a series ofperchlorinated fragments of fullerenes were synthesized.

本文的工作包括以下内容：(1)用脉冲激光溅射多相反应体系，以石墨为固体靶，以氯仿为气相和液相反应物，合成了一系列全氯代富勒烯碎片。

In this paper, GaN one-dimensional nanosmaterials were synthesized through magnetron sputtering and ammoniating progress on Si(111) substrates.

本文介绍了利用溅射加氨化的两步生长法在Si衬底上采用金属Nb作催化剂合成一维GaN纳米材料的方法。

Firstly, Ga2O3/Ta film is deposited on Si (111) substrates by magnetron sputtering system, and then GaN nanostructures were fabricated through ammoniating.

本文介绍了采用氨化磁控溅射Ga_2O_3/Ta薄膜的方法在硅衬底上合成了GaN纳米结构的方法。

To gain the high-guality GaN nanostructure,GaN nanowires were successfully prepared on the Si(111) substrates through ammoniating Ga2O3/ V thin films deposited by magnetron sputtering.

为了制备高质量的GaN纳米结构，采用磁控溅射技术先在硅衬底上制备Ga2O3/V薄膜，然后在流动的氨气中进行氨化反应，成功制备出GaN纳米线。

To gain the high-guality GaN nanostructure,GaN nanowire s were successfully prepared on the Si(111) substrates through ammoniating Ga2O3/V thin films deposited by magnetron sputtering.

为了制备高质量的GaN纳米结构，采用磁控溅射技术先在硅衬底上制备Ga2O3/V薄膜，然后在流动的氨气中进行氨化反应，成功制备出GaN 纳米线。

Finally, according to market conditions and market products this article paper analyzes the trends in the development of camera technology, and designs a color night vision camera.

最后根据市场情况和市面上产品的情况分析了摄像机技术的发展趋势，并设计了一款彩色夜视摄像机。

Only person height weeds and the fierce looks stone idles were there.

只有半人深的荒草和龇牙咧嘴的神像。