溅

I've spilt my orange juice over here. Would you wipe it up for me?

我的橙汁溅出来了，请帮我擦干净。

The results can be summarized as follows:(1) By laser ablating a heterogeneous reaction system which wasconsisted of solid graphite, liquid and gaseous chloroform, a series ofperchlorinated fragments of fullerenes were synthesized.

本文的工作包括以下内容：(1)用脉冲激光溅射多相反应体系，以石墨为固体靶，以氯仿为气相和液相反应物，合成了一系列全氯代富勒烯碎片。

The preparation of AIN thin films has been carried out by chemical vapor deposition , reactive sputtering deposition and pulsed-laser ablating deposition etc.

当前制备AIN薄膜的方法主要有化学气相沉积法、有机化合物气相沉积法、射频溅射法和激光脉冲熔融沉积法等，但所有的这些方法都有各自的不足。

The media are acclaiming them, large-scale exhibitions are showing their projects, and critics are propagating their voices. This is a place where young people burst with enthusiasm and passion. The air is full of excitement and bursting with energy.

媒体为他们欢呼，大型展览秀出他们的身影，评论家们传播他们的声音，这是一块让年轻人的头颅燃烧和激情四溅的热土，空气中弥漫着亢奋的气息和过剩的能量。

In this paper, GaN one-dimensional nanosmaterials were synthesized through magnetron sputtering and ammoniating progress on Si(111) substrates.

本文介绍了利用溅射加氨化的两步生长法在Si衬底上采用金属Nb作催化剂合成一维GaN纳米材料的方法。

Firstly, Ga2O3/Ta film is deposited on Si (111) substrates by magnetron sputtering system, and then GaN nanostructures were fabricated through ammoniating.

本文介绍了采用氨化磁控溅射Ga_2O_3/Ta薄膜的方法在硅衬底上合成了GaN纳米结构的方法。

Single-crystalline GaN nanowires have been synthesized on Si(111) substrates by magnetron sputtering through ammoniating the Ga2O3/Nb films at 900 °C in a quartz tube.

中文摘要：采用射频磁控溅射技术在硅衬底上制备Ga2O3/Nb薄膜，然后在900 °C下于流动的氨气中进行氨化制备GaN纳米线。

GaN nanorods are successfully synthesized on Si(111) substrates with magnetron sputtering through ammoniating Ga2O3/Co films at 950℃.X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and Fourier-transform infrared spectroscopy are used to characterize the samples.

采用磁控溅射技术先在Si衬底上制备Ga2O3/Co薄膜，然后在950℃下流动的氨气中进行氨化反应制备GaN纳米棒。应用X射线衍射、扫描电镜、傅里叶红外吸收光谱、选区电子衍射和高分辨透射电子显微镜对样品进行表征。

To gain the high-guality GaN nanostructure,GaN nanowires were successfully prepared on the Si(111) substrates through ammoniating Ga2O3/ V thin films deposited by magnetron sputtering.

为了制备高质量的GaN纳米结构，采用磁控溅射技术先在硅衬底上制备Ga2O3/V薄膜，然后在流动的氨气中进行氨化反应，成功制备出GaN纳米线。

To gain the high-guality GaN nanostructure,GaN nanowire s were successfully prepared on the Si(111) substrates through ammoniating Ga2O3/V thin films deposited by magnetron sputtering.

为了制备高质量的GaN纳米结构，采用磁控溅射技术先在硅衬底上制备Ga2O3/V薄膜，然后在流动的氨气中进行氨化反应，成功制备出GaN 纳米线。

And Pharaoh spoke to Joseph, saying, Your father and your brothers have come to you.

47：5 法老对约瑟说，你父亲和你弟兄们到你这里来了。

Additionally, the approximate flattening of surface strip using lines linking midpoints on perpendicular lines between geodesic curves and the unconditional extreme value method are discussed.

提出了用测地线方程、曲面上两点间短程线来计算膜结构曲面测地线的方法，同时，采用测地线间垂线的中点连线和用无约束极值法进行空间条状曲面近似展开的分析。