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Vanadium oxide thin films are widely used in the field of uncooled IR detecting and imaging for its high temperature coefficient of resistance.

氧化钒薄膜由于具有高电阻温度系数,近年来被广泛应用于非制冷红外探测及红外成像领域。

In this paper, the preparation and Temperature Coefficient of Resistance characteristic of nano-VO2 powder/ Poly(3,4-ethylenedioxythiophene) composite is described.

功能复合材料是近年来电子材料研究的热门方向之一,由过渡金属氧化物相与高分子绝缘相组成的复合材料的研究成果屡见报导,而本文所研究的纳米VO2与高分子导电相复合的材料具有负电阻温度系数特性。

By using the relationship that output voltage of unbalanced bridge is in direct proportion to change of working arm resistance,this paper measures the coefficient of resistance temperature of metallic conductor,therefore enriching the contents of physcial experiment.

本文利用非平衡电桥的输出电压与工作臂电阻变化成正比的关系,测出金属导体的电阻温度系数,丰富了物理实验的内容。

Thermistors are temperature depender resistors and "PTC" stands for postive Temperature coefficient of resistance.

PTC(Positive Tempperature Coeffcent热敏电阻陶瓷是一类具有正的温度系数的半导体功能陶瓷。

Two Chinese Invention Patents, which titled " Manganin thin film ultra-high pressure sensors" and "Preparation method of manganin thin films with low temperature coefficient of resistance", have been applied based on the above original work of this thesis.

以上第l~3创新点及第5创新点已经分别申请了两项中国发明专利:"薄膜式锰铜超高压力传感器"和"低电阻温度系数锰铜薄膜的制备方法"。

The results show that increasing the solids loading of slurry up to 45% allows minimizing deformation of green sheets during drying and sintering process effectively. When the content of monomers in shurry is 2%-4%, and the content of plasticizer in shurry is 3%-6%, green sheets with good strength and flexibility are obtained. The microstructures and the electric characteristics of PTCR chip thermistors were investigated. A five-layer chip PTCR thermistor with room resistance of 0.8Ω, temperature coefficient of resistance of 13.40%/℃, and ratio of maximum to minimum of resistance larger than 10^5 is successfully fabricated.

研究表明:浆料固相体积分数对坯体的乾燥及烧结行为有较大影响,当浆料固相体积分数在45%以上时,可有效避免制品乾燥和烧结过程中收缩过大而产生的变形开裂缺陷;当有机单体的质量分数为2%~4%,丙三醇的体积分数为3%~6%时,可获得有一定强度和柔韧性的生坯;研究了注凝成型PTCR陶瓷的微观结构及陶瓷元件的PTCR性能,成功地制备了层数为5、室温电阻为0.8Ω、电阻温度系数为13.40%/℃、升阻比大於10^5的多层片式PTCR元件。

The smaller bismuth ruthenate partical is, sheet resistivity is lower and temperature coefficient of resistance is more positive and the refiring change ratio is nearer to zero.

铅硼硅玻璃粉体平均粒径对厚膜电阻的性能影响有一极值点,约为1.51μm,在该点处膜层的方阻值最小,电阻温度系数绝对值最小,重烧变化率最接近零值。

The results show that increasing the solids loading of slurry up to 45% allows minimizing deformation of green sheets during drying and sintering process effectively. When the content of monomers in shurry is 2%-4%, and the content of plasticizer in shurry is 3%-6%, green sheets with good strength and flexibility are obtained. The microstructures and the electric characteristics of PTCR chip thermistors were investigated. A five-layer chip PTCR thermistor with room resistance of 0.8 Ω, temperature coefficient of resistance of 13.40%/℃, and ratio of maximum to minimum of resistance larger than 105 is successfully fabricated.

研究表明:浆料固相体积分数对坯体的干燥及烧结行为有较大影响,当浆料固相体积分数在45%以上时,可有效避免制品干燥和烧结过程中收缩过大而产生的变形开裂缺陷;当有机单体的质量分数为2%~4%,丙三醇的体积分数为3%~6%时,可获得有一定强度和柔韧性的生坯;研究了注凝成型PTCR陶瓷的微观结构及陶瓷元件的PTCR性能,成功地制备了层数为5、室温电阻为0.8 Ω、电阻温度系数为13.40%/℃、升阻比大于105的多层片式PTCR元件。

Uncooled infrared detector; Vanadium oxide films; temperature coefficient of resistance; the finite Element Method; porous silicon

信息科技,无线电电子学,光电子技术、激光技术非制冷红外探测器;氧化钒薄膜;电阻温度系数;有限元法;多孔硅

This circuit features low temperature coefficient and high power supply rejection ratio.

该电路有较低的温度系数和较高的电源抑制比。

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