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Temperatures at its surface change dramatically, ranging from a high that can exceed 800 °F (425 °C) on the sunward side to a low of about -290 °F (-180 °C) at the end of its night.

地表温度变化很大,面对太阳的地方温度高达402℃,而夜晚温度则只有-173℃。

On the base of these tested results and other experimental data of environment temperature, main factors which affect the temperature distribution are analyzed, the viewpoint that periodical environment temperature can be simplified as a syntonic curve is presented.

在现场试验研究和其它环境温度的大量实测资料的基础上,对影响预应力混凝土构件内部温度分布的主要因素进行分析,提出了周期性变化的环境温度可在数学上简化为一条简谐波曲线。

At the beginning the temperatures of wall of U-tube and soil rise quickly and along with the Heat Pump running the temperatures change tardily until the temperatures are steady.

热泵刚开始运行的一段时间,管井壁面温度升高的很快,随着运行时间的增加,温度变化减小,直至达到某一稳定温度值,系统处于稳定状态。

Then,the influences of the argon pressure,substrate temperature,sputtering power,and the annealing temperature on the temperature coefficient of resistance for the sensor is studied.

结合工艺与测试实验,系统地分析了氩气压强、衬底温度、溅射功率、退火温度等工艺参数对电阻温度系数的影响规律。

Utilizing the positive temperature coefficient effect, the resistance of polymer will rise as temperature increasing sharply.

利用其PTC效应,电阻能随温度急剧上升,亦即是当导电复合材料之温度上升至一关键温度时,其电阻会明显地大幅上升,达到暂时绝缘或短路的效果。

The resistivity of the polysilicon films could be controlled under different dopant concentration and different anneal temperature. The changes of resistance with the temperature were measured. The temperature coefficient of resistance value was about 1‰ when the boron concentration was 5X 10 /cm and the anneal temperature was 900℃.

2制作了不同掺硼浓度和退火温度的多晶硅电阻,测试了阻值随温度的变化,在掺硼浓度和退火温度分别为5×10~(14)/cm~2和900℃时得到了接近1‰的TCR值。

The VO x(x.5) film has a negative temperature coefficient of resistance of (-1~-4)%K -1 ,and an activation energy of 0.078eV~0.110eV.

对不同温度退火后氧化钒薄膜在10~100℃范围内测定了薄层电阻随温度的变化,得到的电阻温度系数值为(-1~-4)%K-1。

Vanadium oxide thin films deposited on slide glass substrates are prepared by facing-target magnetron sputtering.The effect of sputtering conditions on temperature coefficient of resistance is analyzed by orthogonal experiment,and the optimum process recipes are achieved,including Ar∶O2=48∶0.4,gas pressure is 2 Pa,substrate temperature is 27 ℃,sputtering power is 180 W.

利用对靶磁控溅射法在玻璃基片上制备VOx薄膜,采用正交实验方法研究了镀膜条件对VOx薄膜电阻温度系数的影响,得到优化的镀膜工艺参数,主要包括Ar∶O2为48∶0.4、工作压力恒定为2 Pa、基底的温度为室温27℃、溅射功率保持在180W,在此基础上,进行不同温度条件的真空退火,得到薄膜TCR在-2.5%~-4.5%范围。

Thermal resistor is divided to the reaction of temperature temperature coefficient and negative temperature coefficient.

热敏电阻对温度的反应分正温度系数和负温度系数。

Infrared image processing procedures under the Importation of the temperature scale to be the temperature of infrared image information, and can be re-set temperature range, but also can save image data of the temperature.

详细说明:红外图像处理程序;根据输入的温标得到红外图像的温度信息,并且可以重新设定温度范围,而且还可以保存图像的温度数据。

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然而,正如其名字所指出的那样,CD盘不能写,也不能用任何方式改变其内容。

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