浪涌

Transient and surge are the instant aberrance of the voltage and electric current on the simple alternating current wave circuit.

瞬变和浪涌是正弦交流波电路上电压与电流的一种瞬时态的畸变。

The inrush current limiter 4 is described in greater detail in FIG.

图2中更加详细地描述了浪涌电流限制器4。

From that summation point the new part of the PFC circuit, the current inrush limiter device framed in at 4 starts.

PFC电路的新的部分，即位于框4中的浪涌电流限制器设备自该求和点开始。

SURGE CURRENT Surge current is specified as the maximum allowable peak, nonrecurrent squarewave current with a pulse width, PW, of 8.3 ms.

浪涌电流的浪涌电流的最大允许指定为高峰期，非经常性方波脉冲宽度，星期三8.3毫秒，电流。

A series of ZnO-V2O5 based varistor ceramics, which have homogenous microstructure, high relative density of more than 98 % and an optimum non-ohmic coefficient α of more than 50, were fabricated at 950 ℃ by traditional electroceramic fabrication process.

ZnO压敏电阻因其特有的非线性系数大、响应速度快、吸收浪涌能力强等特点被广泛作为伺服保护器件应用在各种电路中，使被保护电路免受各种浪涌电流或过电压的损坏[1]。

Applications on noise absorption of DC motor, power supply input, surge absorption of inductive load, bypass condenser, communication line protection and prevention from electricity surge were put forward because of higher performance requirement on weapon system.

针对武器系统的高性能要求，本文提出了SrTiO3基压敏电阻在直流电机消噪、电源输入端、吸收电感性负载开关浪涌、旁路电容器、通信线路防护、防止电涌冲击等方面的应用。

To protect the load form damages by inrushing current, special power factor control circuits having inrush current limiters, are used.

为了保护负载不受浪涌电流引起的损坏，使用具有浪涌电流限制器的功率因数控制电路。

This issue is addressed by an inrush current limiter device for limiting inrushing current to a connectable load comprising: at least one switchable IGBT-based limiter unit for selectively limiting the inrushing current, having at least one current limiting conductor element for a limited leading of current and at least an IGBT-based switch whereby the IGBT-based switch is used as well as a controlled current limiter and as a by-pass element, and at least one control device for controlling the IGBT-based switch, whereby the control device comprises at least one IGBT-based switch supply and means for realizing smooth flanks of an output signal at the selected conductor element.

该问题通过用于限制针对可连接负载的浪涌电流的浪涌电流限制器设备解决，该浪涌电流限制器设备包括：至少一个可开关的基于IGBT的限制器单元，用于选择性地限制浪涌电流，其具有至少一个限流导体元件，用于有限引导电流，和至少一个基于IGBT的开关，其中基于IGBT的开关用作受控电流限制器和旁通元件，和至少一个控制设备，用于控制基于IGBT的开关，其中控制设备包括至少一个基于IGBT的开关电源和用于实现选定导体元件处的输出信号的平滑侧面的装置。

The present invention relates to an inrush current limiter device for limiting inrushing current to a connectable load comprising: at least one switchable IGBT (Insulated Gate Bipolar Transistor)-based limiter unit for selectively limiting the inrushing current, having at least one current limiting conductor element for limited leading of current, and at least an IGBT-based switch, whereby the IGBT(Insulated Gate Bipolar Transistor)-based switch (Q2) is used as well as a controlled current limiter and as a by-pass element, and at least one control device for controlling the IGBT-based switch, whereby the control device comprises at least one IGBT-based switch supply and means for realizing a smooth flank of an output signal at the selected conductor element.

本发明涉及一种用于限制针对可连接负载的浪涌电流的浪涌电流限制器设备，包括：至少一个可开关的基于IGBT的限制器单元，用于选择性地限制浪涌电流，其具有至少一个限流导体元件，该限流导体元件用于有限引导电流，和至少一个基于IGBT的开关，其中基于IGBT的开关(Q2)用作受控电流限制器和旁通元件，和至少一个控制设备，用于控制基于IGBT的开关，其中控制设备包括至少一个基于IGBT的开关电源和用于实现选定导体元件处的输出信号的平滑侧面的装置。

Here, the shunt DEVICE 's function is to protect the PORT from differential surges, a differential surge will be balanced between conductors by the shunting DEVICE , converted to common mode. The isolation provides protection from the common mode transient remaining.

图中，分流器的功能是保护接口的浪涌差，即分流器件使得浪涌差转换成共模电压而维持导线间的平衡；而隔离则持续提供共模transient保护。

The absorption and distribution of chromium were studied in ryeusing nutrient culture technique and pot experiment.

采用不同浓度K2CrO4(0，0.4，0.8和1.2 mmol/L)的Hoagland营养液处理黑麦幼苗，测定铬在黑麦体内的亚细胞分布、铬化学形态及不同部位的积累。

By analyzing theory foundation of mathematical morphology in the digital image processing, researching morphology arithmetic of the binary Image, discussing two basic forms for the least structure element: dilation and erosion.

通过分析数学形态学在图像中的理论基础，研究二值图像的形态分析算法，探讨最小结构元素的两种基本形态：膨胀和腐蚀；分析了数学形态学复杂算法的基本原理，把数学形态学的部分并行处理理念引入到家实际应用中。