测面器

The measuring device is structured by including a He-Ne laser; a beam expander, a soft aperture slot and a off-axis parabolic mirror to be measured are arranged in turn along the direction of the emergent laser beam direction of the He-Ne laser; a standard cross hair and a micro objective are arranged in turn on the direction of the reflected beam of the off-axis parabolic mirror; the micro objective is arranged on the focus of the off-axis parabolic mirror; the focus is imaged on an area array CCD; the output end of the area array CCD is connected with a computer; the off-axis parabolic mirror is fixed on a five-dimensional electric adjusting frame.

一种离轴抛物面镜点聚焦能力测定装置和测定方法，测定装置的构成包括：一台He-Ne激光器，沿该He-Ne激光出射激光束方向依次设置扩束器、软边光阑和待测的离轴抛物面镜，在该离轴抛物面镜的反射光束方向依次设置标准叉丝和显微物镜，该显微物镜位于所述的离轴抛物面镜的焦点，所述的焦点成像于面阵CCD上，该面阵CCD的输出端接计算机，所述的离轴抛物面镜固定在一五维电动调整架上。

In this study, AlGaN/GaN hetero-junction photo-transistors in detecting ultraviolet spectra have been fabricated and characterized. One of the HPTs features as low-temperature grown GaN insertion layer between based and emitter layers to reduce dark current. The internal gain and response time are also studied for the HPTs with and without the LT-GaN layer.

中文摘要本论文针对氮化镓/氮化铝镓系列异质接面光电晶体作为紫外光波段侦测器之相关制作与研究，包括於磊晶结构中有无插入一层低温成长氮化镓层之两种异质接面光电晶体，并比较其元件讯号放大效果以及响应时间的改变。

AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.

氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程，利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝，再直接溅镀金属铝作为指叉电极，比较目前文献制作出来的氮化铝MSM元件，可得到很好的元件金半接面之理想因子1.0125，算出萧特基能障高度为0.916eV，并有很低的暗电流为1.39 pA，提升了元件的特性，使用150 W氘灯入射，光暗电流差距可到两个order，且元件之光电流与入射光功率呈线性，显示所制作之氮化铝MSM元件，很适合针对深紫外光波段侦测。

The year 2008 is likely to rank as the 10th warmest year on record since the beginning of the instrumental climate records in 1850. The global combined sea-surface and land-surface air temperature for 2008 is currently estimated at 0.31℃ above the 1961-1990 annual average of 14.00℃. Ten of the warmest years were all among the recent 12 years, indicating a continuous trend of global warming.

2008年可能是自1850年开始有器测记录以来全球第10个最暖的年份，全球海面和陆面综合气温比1961—1990年的年平均高0.31℃，150 a 来最热的10个年份都集中在最近12 a 里，全球气候变暖的趋势仍在持续。

For a big chunk of credit-card losses; the number of filings (and thus charge-off rates) would be rising again, whether

年美国个人破产法的一个改动使得破产登记急速下降，而后引起了信用卡大规模的亏损。

Eph. 4:23 And that you be renewed in the spirit of your mind

弗四23 而在你们心思的灵里得以更新