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泄漏电流

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The change and development of LC is one of the main decisive factors of flashover.

覆冰与污秽绝缘子串的闪络均是由泄漏电流引起的,泄漏电流的变化与发展是决定闪络的主要因素之一。

This current is known as the input offset current, and it is caused by bias currents of active devices as well as by leakage currents through insulators within the INSTRUMENT .

这个电流就是输入失调电流,它可能是由有源设备的偏置电流引起的,也可能是由仪器内的绝缘体泄漏电流引起的。

This current is known as the input offset current, and it's caused by bias currents of active devices as well as by leakage currents through insulators within the instrument.

这种电流称为输入偏置电流,是由有源器件的偏置电流以及流过仪器内部的绝缘子的泄漏电流所引起的。

According to equivalent circuit of MOA, the characteristic of leakage current of MOA and some disturb factors are discussed.

本文根据氧化锌避雷器的简化等值电路,分析了MOA泄漏电流的特性及几种干扰因素对泄漏电流监测的影响。

Modern power spectral estimation is applied in leakage current analysis in thispaper and the global character of leakage current is obtained by associated analysis ofpower spectral character and root mean square value of leakage current.

将现代功率谱估计的方法应用于泄漏电流分析中,通过泄漏电流的功率谱特征与泄漏电流时域特征中的有效值的联合分析,更好地把握了泄漏电流的总体特征。

Two kinds of silicon samples with distinct surface treatment, i. e., one surface was chemically etched and the other was unetched, were used to investigate the characteristics of leakage current and surface flashover of semiconductor under impulse voltage in vacuum. The experimental results showed that the surface conditions of samples affected these characteristics greatly. Before flashover, the Ohmic current was observed for unetched samples and the space charge limited current for etched samples, respectively. Meanwhile both samples showed quite different flashover tracks, and the surface-etched samples displayed a much higher onset voltage of flashover.

对采用和未采用表面化学腐蚀处理的半导体硅在冲击电压下的实验表明(参见 Zhang et al , Applied Physics Letters, 2002),试品的表面状况对其泄漏电流和沿面闪络特性有着很大的影响:在沿面闪络之前,未经处理试品的泄漏电流表现为 Ohm 性电流,而表面处理过的试品表现为空间电荷限制电流特性;同时两类试品表面的闪络通道也表现出不同的特征,而采用表面化学腐蚀处理可以明显提高其沿面闪络电压。

Gas-filled relays also provide low,stable leakage current in applications sensitive to current fluctuations especially across open contact sets over long periods of time.

在对电流波动很敏感的应用中,充气继电器具有低而稳定的泄漏电流,特别是在断开触点间,可以长时间保持很低的泄漏电流

According to the studying results obtained in the artificial climate chamber in Chongqing University, this paper described the AC flashover process on the surface of an iced insulator string, and the voltage distribution along the iced insulator string and the developing process and the leakage current were obtained.

本文根据在重庆大学人工气候室中作的模拟研究的结果,对覆冰绝缘子的交流沿面放电过程进行了系统的描述,得出了绝缘子串的电压分布规律和泄漏电流的变化过程,并结合圆柱形绝缘子的覆冰放电现象和泄漏电流波形,对覆冰绝缘子的交流放电机理进行了探讨。

The temperature dependence of the distribution of the two-dimensional electron gas,the sheet resistance,the ohmic specific contact resistance,and the buffer leakage current are analyzed.

得出了器件饱和电流随温度升高而下降主要由输运特性退化造成,沟道泄漏电流随温度的变化主要由栅泄漏电流引起的结论。

A fine-grain sleep transistor insertion technique based on our simplified leakage current and delay models is proposed to reduce leakage current.

首先给出一种泄漏电流和延时的简化模型,并且在此基础上提出了一种降低泄漏电流的细粒度休眠晶体管插入法。

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随着死亡的吉他手Schuldiner接受主唱的职务,乐队在现实中树立了重要的影响。

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