氮化的

On the other hand, Explosive Boron Nitride, another high-pressure phase of BN, was obtained in the resultant films. We also studied the thermodynamic parameters of the growth of E-BN films.

另外，在我们所制备的薄膜中还得到了氮化硼的另一高压相-爆炸结构氮化硼，并初步研究了其生长的热力学参数。

Drift electron mobility, the Hall factor and Hall mobility in GaN are calculated according to Mattiessen's rule as a function of temperature for carrier concentrations with the compensation ration as a parameter on the basis of taking into account the individual average scattering momentum relaxation time of four scattering mechanisms, namely, ionized impurity scattering, polar mode optical scattering, acoustic piezoelectric scattering and acoustic phonon deformation potential scattering which have an effect on electron mobility of GaN.

考虑了对纤锌矿型氮化镓低场电子输运影响最为显著的4种散射机制－电离杂质散射，极化光学波散射，声学波压电散射和声学声子形变势散射的单个平均动量驰豫时间，采用Mattiessen's rule计算了不同补偿率以及不同载流子浓度条件下，氮化镓电子漂移迁移率，霍耳因子以及霍耳迁移率随温度的变化。

The effect of nitridation conditions on the properties of the products were investigated through experiments, and the influencing equation of the effect of additive element contents was gained.

通过实验研究了工艺条件对氮化产物性能的影响，并总结出掺杂元素原始成分对氮化反应速率的影响规律。

The severity of the enhanced degradation increases with increasing nitrogen content in gate dielectric with prolonged nitridation time.

劣化增加的严重性会随著在闸极介电层因氮化时间增长所致的氮元素含量增加而增加。

The relationship of the nitridation rate of Al-Mg-Si alloys with temperature from room temperature to 1300℃ was investigated by TG experiments.

通过程序升温法热重实验，考察了Al-Mg-Si合金从室温至1300℃范围氮化反应速率随温度的变化规律，实验验证了Al-Mg-Si合金的直接氮化符合阿累尼乌斯公式。

Under the experimental conditions in this study, when the silicon powder with a particle size of 2.7 μm is used as raw materials, with a nitridation temperature of 1380℃ and nitridation time of 54.5 s, the conversion rate of silicon is 22.5%.

在本文条件下，当以平均粒径2.7μm的硅粉为原料、氮化温度为1380℃、氮化时间为54.5 s时，硅的转化率为22.5%。

In this thesis, the InGaN/GaN MQW LEDs with various barrier doping structures are investigated.

本论文主要研究不同量子井阻挡层掺杂结构的氮化铟镓/氮化镓发光二极体，并探讨不同的掺杂结构对其光电特性之影响。

In this thesis, we report an investigation of two-wavelength excited photoluminescence on InGaN/GaN multiple quantum wells to study the nonradiative defects.

在这一篇论文之中，我们利用双光源激发的萤光光谱法来研究氮化铟镓/氮化镓多重量子井结构中的非辐射缺陷。

This cutting tool was tested in dry-cutting area, and its cutting properties were studied to machine quenched steel.

将氮化碳涂层刀具应用于干切削领域，通过对淬火钢的干式切削试验，研究氮化碳涂层刀具的切削加工性能。

In the process of silicon nitride thin film prepared by PECVD, deposition parameters strongly influence the properties of silicon nitride thin film.

在PECVD 氮化硅薄膜的实验中，沉积参数在很大程度上影响乃至决定着氮化硅薄膜的性能。

Do you know, i need you to come back

你知道吗，我需要你回来

Yang yinshu、Wang xiangsheng、Li decang,The first discovery of haemaphysalis conicinna.

1〕 杨银书，王祥生，李德昌。安徽省首次发现嗜群血蜱。