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氮化物

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Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料;在基质材料上外延生长形成变换叠加的垒层和阱层,在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质,得选择超晶格位置掺杂的p型III族氮化物材料,其中,每个生长周期的步骤为:生长带隙较宽的垒层,同时掺入受主杂质;生长施主杂质或受主杂质δ掺杂层;生长非掺的带隙较窄的阱层;生长受主杂质或施主杂质δ掺杂层;在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火,即得目标产物。

The effects of substituents on the nucleophilic reaction of benzyl halide and sodium azide were studied.

合成了叠氮苄、对氰基叠氮苄,对氟叠氮苄,对甲基叠氮苄和联苯二叠氮苄,研究了苯环上不同取代基对苄基卤代物与叠氮化钠经亲核取代反应生成苄基叠氮化物的反应的影响。

This article introduced the nitride pollution present situation in the atmosphere,mainly taking Shanghai and Guangzhou as the example,and analyse its pollution origin from several aspect such as the sources of energy using and motor vehicle tail gas blowoff etc.

主要以上海、广州为例介绍大气中氮化物的污染现状,并从能源使用、机动车尾气排放等几方面分析氮化物污染的来源,另外从氮化物的破坏力以及造成酸雨等方面介绍大气中氮化物的危害。

The nitride semiconductor Schottky electrode has a stack structure of a cupper having contact with a nitride semiconductor and a first electrode material formed on an upper layer of the cupper.

氮化物半导体肖特基电极具有分层结构,该分层结构包括与氮化物半导体接触的铜层和在铜的上层上形成的第一电极材料。

Other compounds include the nitrides, exceptionally hard materials made from nitrogen and a metal; cyanides; azides, used in detonators and percussion cap s; and thousands of organic compounds containing nitrogen in functional groups or in a linear or ring structure.

其它的化合物包括氮化物,是由氮和金属生成的异常坚硬的材料;氰化物;叠氮化物,用作引爆剂和雷管;还有数千种含氮的有机化合物,以功能团或者线性或环状结构的形式存在。

In order to find biologically active urea compounds,seven new N-[5-(3-pyridyl)-1,3,4-thiadiazol-2-yl]-N'- urea derivatives were synthesized by the reaction of 2-amino-5-(3-pyridyl)-1,3,4-thiadiazole with aroylazides,which were prepared starting from carboxylic acids,ethyl chloroformate and sodium azide by one-pot procedure.

为了寻找高生物活性的脲类化合物,通过2-氨基-5-(3-吡啶基)-1,3,4-噻二唑与酰基叠氮化物反应,设计合成了7个新的N-[5-(3-吡啶基)-1,3,4-噻二唑-2-基]-N'-取代苯基脲,其中芳酰基叠氮化物是以芳酸、氯甲酸乙酯、叠氮化钠为起始原料采用&一锅法&所制得。

Nitrogen species in FCC diesel oil include basic species (such as aniline, quinoline, and their derivatives) and nonbasic species (such as indole, carbazole, and their derivatives), and only 0.1% of the nitrogen compounds are quinoline and about 64% of them are carbazole and their derivatives.

氮化物主要为碱性氮化物和非碱性氮化物两大类型,其中碱性氮化物主要是苯胺及其衍生物,喹啉含量很低,约占总氮质量分数的0.1%,非碱性氮化物主要包括吲哚及其衍生物和咔唑及其衍生物,而咔唑类氮化物一般约占总氮质量分数的64%。

After coating the solutions on the substrates, the precursor films will go through a heat treatment to pyrolyze the polymer and form solid films, In this paper, we show some representative oxide and nitride films grown by PAD, including simple oxide/nitride such as TiO2, GaN, A1N and complex oxide/nitride such asTiO3 and Ti(subscript 1-x)AlN.

该文介绍了使用该方法制备的一些具有代表性的氧化物和氮化物薄膜,包括简单氧化物/氮化物,如TiO2、GaN和AlN等,复杂氧化物/氮化物如(Ba,SrTiO3、Ti(下标 1-x)AlN等。

Other compounds include the nitrides, exceptionally hard materials made from nitrogen and a metal; cyanides; azides, used in detonators and percussion caps; and thousands of organic compounds containing nitrogen in functional groups or in a linear or ring structure.

其它的化合物包括氮化物,是由氮和金属生成的异常坚硬的材料;氰化物;叠氮化物,用作引爆剂和雷管;还有数千种含氮的有机化合物,以功能团或者线性或环状结构的形式存在。

Various grinding machine components are made of superhard materials, including certain machine grade ceramics, including such materials as carbides, nitrides, borides, oxides, oxynitrides, or any other ceramic component.

由超硬材料制造的各种磨床部件,超硬材料包括某些机械等级的陶瓷、诸如碳化物、氮化物、硼化物、氧化物、氧氮化物或任意其它陶瓷组分的材料。

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然而,正如其名字所指出的那样,CD盘不能写,也不能用任何方式改变其内容。

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