氮化

X-ray diffraction shows that the synthesis of cordierite and in situ nitridation of TiO2 were fulfilled simultaneously.

不同温度下合成产物的X射线衍射分析表明：前驱粉体在1250℃氮化3h时，堇青石与氮化钛的合成反应能同时完成。

The fluffy film may fall off from Cf if the pretreat method of Cf suface was not appropriate. Boron sources was ahead loaded on the surface of Cf by in situ chemical reaction to protect the fiber from corrasion of vapor such as NH_3 and increase the combination between BN film and Cf. The measured surface area of the composite fiber increased greatly to

表面的氮化硼绒膜与碳纤维的结合程度，取决于碳纤维表面预处理的方式，先期在表面通过原位化学反应引入硼源物质，形成保护膜，可以避免碳纤维在整个反应过程中受到气相侵蚀而影响氮化硼绒膜与碳纤维的结合程度，该复合材料的比表面积大幅提高，达到96m~2／g。

The diazotization and hydrolysis process was used to synthesize high-purity m-cresol using m-toluidine as the main material.

间甲酚是一种重要的精细化工中间体，以间甲苯胺为原料，采用重氮化-水解法制备高纯度间甲酚，通过正交实验和单因素实验对重氮化反应工艺条件进行了优化。

Syntheses of Curing Agent Modified Dicyandiamide by m-Toluidine;2. The diazotization and hydrolysis process was used to synthesize high-purity m-cresol using m-toluidine as the main material.

间甲酚是一种重要的精细化工中间体，以间甲苯胺为原料，采用重氮化-水解法制备高纯度间甲酚，通过正交实验和单因素实验对重氮化反应工艺条件进行了优化。

It is seen from Fig.2 that the H concentration in the SiNx:H decreases upon annealing, however H may also effuse out towards the atmosphere.

经查验后的h分布在结构退火温度高达550 ℃，这是可见的H渗透在Si衬底上是增加相比，以作为沉积样本，因此，这是表示， H是发表对衬底上，无论是直接从A - Si ： H薄膜或从覆氮化硅：每小时它是从图2表示的H浓度在氮化硅： H的跌幅后，退火，但h也可能涌出了对大气中。

Drift electron mobility, the Hall factor and Hall mobility in GaN are calculated according to Mattiessen's rule as a function of temperature for carrier concentrations with the compensation ration as a parameter on the basis of taking into account the individual average scattering momentum relaxation time of four scattering mechanisms, namely, ionized impurity scattering, polar mode optical scattering, acoustic piezoelectric scattering and acoustic phonon deformation potential scattering which have an effect on electron mobility of GaN.

考虑了对纤锌矿型氮化镓低场电子输运影响最为显著的4种散射机制－电离杂质散射，极化光学波散射，声学波压电散射和声学声子形变势散射的单个平均动量驰豫时间，采用Mattiessen's rule计算了不同补偿率以及不同载流子浓度条件下，氮化镓电子漂移迁移率，霍耳因子以及霍耳迁移率随温度的变化。

Because our laboratory use helicon sputtering system that is MBE-like to deposit aluminium nitride film experience for many years , and control to the understanding and quality of the aluminium nitride film has sutible confidence . Comprehensive above-mentioned material advantages , we choose aluminium nitride as the high dielectric constant material in our research .

此外由於本实验室使用具有类MBE成长机制之回旋溅镀系统成长氮化铝薄膜已有多年经验，使得氮化铝成为本研究中的高介电值材料。

Progress and key difficulties in the synthesis and characterization of carbon nitride crystals are summarized.

介绍了氮化碳晶体的合成与表征研究进展，分析了氮化碳晶体合成中存在的主要困难。

Persistent photoconductivity and recombination mechanism were investigated in an intrinsic GaN at room temperature with incident photon wavelength from 360 nm to 377 nm.

通过对室温下的本征氮化镓材料进行不同波长(360 nm～377 nm)的光照，分析了本征氮化镓中的持续光电导及其复合机制。

Based on the analysis on the control system and sintering principle of vacuum nitridizing sintering temperature,a rational nitriding sintering technical curve was developed.

在对真空氮化烧结温度控制系统和烧成机理进行分析的基础上，开发制定了合理的氮化烧成工艺曲线。

However, as the name（read－only memory）implies, CD disks cannot be written onorchanged in any way.

然而，正如其名字所指出的那样，CD盘不能写，也不能用任何方式改变其内容。

Galvanizes steel pallet is mainly export which suits standard packing of European Union, the North America. galvanizes steel pallet is suitable to heavy rack. Pallet surface can design plate type, corrugated and the gap form, satisfies the different requirements.

镀锌钢托盘多用于出口，替代木托盘，免薰蒸，符合欧盟、北美各国对出口货物包装材料的法令要求；喷涂钢托盘适用于重载上货架之用，托盘表面根据需要制作成平板状、波纹状及间隔形式，满足不同的使用要求。