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Low density silicon nitride with about 55% porosity and globed macropores was prepared by reaction-bonded raw silicon powder and adding 30% in mass pore-forming agent of benzoic acid ball-like particles.

以硅粉为原料,添加质量分数为30%的成孔剂球形颗粒,反应烧结制备了气孔率为55%,具有球形宏观孔的低密度多孔氮化硅陶瓷。

XRD further confirmed the synthetic samples are crystalline graphitic carbon nitride.

XRD进一步证实了合成的样品是结晶的石墨相氮化碳。

The invention relates to a metal plug-in layer in film of GaN and its preparation method by hydrogenide vapour phase denotation, which is characterizes in that it adopts structure of wolfram plug-in layer.

本发明涉及一种氢化物气相外延氮化镓膜中的金属插入层及制备方法,其特征在于采用了金属钨插入层的结构。

The results indicate that polyborazine precursor prepared at 150℃ for 10 h and propylamine/isopropylamine molar ratio 2:1, could possess nearly linear molecule skeleton and he prone to melt spinnability. When melt at 90℃, the precursor fibers are prepared with average diameter 10-20μm and BC1.27 N1.52 H structure. After curing process and sintered in NH3 at 1200℃, the near-stoichiometric BN fibers was obtained, which proved this precursor is apt for preparation of BN fibers.

结果表明,当正丙胺/异丙胺摩尔比为2:1,聚合温度为150℃,反应时间为10h时,合成产物具有近似线性分子结构,熔点为90℃,具有良好的成丝性,可获得平均直径10~20μm,组成为BC1.27N1.52H的先驱体纤维,先驱体纤维再经不熔化处理及1200℃氨气高温锻烧等工艺可获得近化学计量比的氮化硼纤维。

Friction composite, hBN, CPC, friction and wear behavior, lubricative films

煅烧石油焦及六方氮化硼对摩阻材料摩擦磨损性能的影响。

In this paper the influences of plasma nitridation of SiO_2 films on the electron traps in the films are discussed.

论述了等离子体氮化对SiO_2薄膜中电子陷阱的影响。

The effect of NH4Cl /KCl as the additives on the nitridation of aluminium powders was investigated.

研究了 NH4Cl /KCl添加剂对铝粉氮化反应的影响。

If the annealing is chosen suitably, the influence of nitridation of SiO_2 on electron traps can be reduced.

适当地退火可以减少等离子体氮化对SiO_2中电子陷阱的影响。

The results indicated that the nitridation condition obviously influenced the photoluminescence properties and electric parameters of GaN films.

研究表明,GaN低温缓冲层生长之前的氮化衬底工艺对GaN外延层表面形貌、发光性能、电学性能有显著影响。

The rate equation of nitridation process was established through the analysis of the transfer processes of aluminum alloy melt and nitrogen.

在对AlN材料生长过程深入分析的基础上,提出了铝合金氮化反应宏观胞状生长机理,以及材料内部晶体生长的VLSS生长机制。

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