氮化

The work done previously is experiential. To this day, the researches on silicon nitride thin film prepared by PECVD stay initial stages, so it is necessary to further develop PECVD. On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.

前人做的工作大多也都是经验性的，至今人们对PECVD 氮化硅薄膜的研究还很不成熟，尚处于研究探索的阶段，从而在理论上有必要对PECVD 法氮化硅薄膜做进一步的研究；与此同时，制备高质量的栅绝缘层用氮化硅薄膜也是制备高性能薄膜晶体管这一课题的需要。

Better film quality with oxygen free content and higher electron mobility can be achieved with InN film with AlN buffer layer .

氮化铝缓冲层的加入，可大幅提升氮化铟薄膜的电子移动率，并能在400℃制作出晶相单纯之氮化铟薄膜。

By using the laser-lift-off technique followed by plasma etching process to roughen the surface, the VLEDs with n-GaN surface roughening has been fabricated.

另一部份，则是在垂直式氮化镓发光二极体的表面制造粗化的效果，以来增进光从发光二极体中萃取出的效率，利用乾式蚀刻将表面制造出粗化的效果，再利用标准的黄光微影制成技术，因此成功的制造出n型表面粗化的垂直式氮化镓发光二极体，至於出光强度的增强量会随者表面粗化情况的不同有著30%？

By the B3LYP calculation of DFT, the difference in changes of energy and charge of ion probe C〓 and C〓 interacting with hBN and graphite respectively and the difference in frontier orbital energy level reveal difference in electroaffinity of hBN and graphite. It could be indicated that hBN only shows weak electropositivity, and will not be able to accept electrons from metal.

根据密度泛函B3LYP方法的计算结果，从六方氮化硼与石墨的前线轨道能级和两者对离子探针的作用能及C〓和C〓的电荷变化不同所表现出的在电亲和性上的差异，揭示了金属难以插入六方氮化硼层间的原因是六方氮化硼仅显弱的电正性，不能接受金属转移来的电子。

Based on the study of heat treatment process,the different nitriding effects under conditions of different nitriding methods,temperatures and time are presented.

通过热处理工艺试验研究，比较在不同的氮化温度及时间条件下的氮化效果，制定出适合40CrNiMo材料的合理的氮化工艺参数。

It is the first time having put forward the mechanism of nitrogenation, based on which the active energy of nitrogenation is obtained.

首次提出了氮化过程分三个阶段的氮化反应机制，并由此得出了氮化反应的激活能。

Under these conditions several aryl iodides bearing awide range of functional groups were converted into the corresponding aryl azides in good yields.

在重新优化后的条件下，大部分不活泼芳基溴化物可以与叠氮化钠发生交叉偶联反应得到良好收率的芳基叠氮化储蓄型投资银条合物，但是有拉电子基团取代的芳基溴化物与叠氮化钠的偶联反应则难以进行。

In this thesis, thermal effect on the optical properties of InGaN epilayer and InGaN LED was investigated.

本论文主要研究热制程对氮化铟镓磊晶薄膜，氮化铟镓/氮化镓发光二极体光学特性之影响。

Aiming to a method for the synthesis of silicon nitride powder by direct nitridation process based on fluidization technology, a two-dimensional mathematical model of thermal process in a suspended bed was established, the thermal process was simulated based on the commercial CFD software FLUENT, and the effects of the flow velocity of nitrogen gas, the ratio of particle to gas and nitridation temperature on the temperature of the bed and the conversion rate of silicon were analyzed.

针对基于流态化技术利用硅粉直接氮化合成氮化硅粉的新工艺，建立了悬浮床内热过程的二维数学模型，并借助CFD商业软件FLUENT对悬浮床内热过程进行了数值模拟，分析了氮气速度、粉气比和氮化温度等因素对温度场和硅转化率的影响。

The methods of improving t he high-temperature-properties and fracture toughness of silicon nitride ceram ics,as well as its research and development prospect are also discussed in this paper.

本文着重介绍了氮化硅陶瓷的制备工艺、提高氮化硅陶瓷高温性能的方法以及改善其断裂韧性的途径，并展望了氮化硅陶瓷的研究前景。

However, as the name（read－only memory）implies, CD disks cannot be written onorchanged in any way.

然而，正如其名字所指出的那样，CD盘不能写，也不能用任何方式改变其内容。

Galvanizes steel pallet is mainly export which suits standard packing of European Union, the North America. galvanizes steel pallet is suitable to heavy rack. Pallet surface can design plate type, corrugated and the gap form, satisfies the different requirements.

镀锌钢托盘多用于出口，替代木托盘，免薰蒸，符合欧盟、北美各国对出口货物包装材料的法令要求；喷涂钢托盘适用于重载上货架之用，托盘表面根据需要制作成平板状、波纹状及间隔形式，满足不同的使用要求。