氮化

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

After esterification, the ethyl-2-chloro-3-phenylpropionate reacts with diethyl malonate under the catalysis of sodium ethylate, and we obtain the corresponding triethyl ester. The-benzylsuccinic acid is formed by the triethyl ester reacting with concentrate hydrochloric acid and taking place hydrolyzation and decarboxylation reaction at the same time. In order to avoid the formation of cinnamic acid, the sodium ethylate and diethyl malonate must be react sufficiently. The course has simple operation, inexpensive materials and better yield.

具体制备工艺为：首先以L-苯丙氨酸为原料采用重氮化方法得到-2-氯-3-苯基丙酸，再经酯化得到-2-氯-3-苯基丙酸乙酯后在乙醇钠催化作用下和丙二酸二乙酯缩合，发生SN2反应，得到相应的三乙酯，然后经水解和脱羧，得到-苄基丁二酸；在实验中乙醇钠要和丙二酸二乙酯充分反应，避免生成肉桂酸乙酯；该过程操作简单，原料便宜，产率较高，总收率可达到26.8%。

The effects of Fe in ferrotitanium and pure iron on the reaction between ferrotitanium, carbon and iron during spraying are different.

理论上Fe-Ti-C系在反应火焰喷涂过程中存在许多反应，如氧化、氮化、碳化等，但Ti与C的放热反应是最主要的，其反应过程逐步进行。

The study of the glass frit shows that it is a chemically compatible glass and has good wettability to AlN substrate.

在微电子封装领域，氮化铝基材料金属化的研究是促使其进入实用阶段的关键。

Hydrogenated amorphous silicon nitride films have been deposited by helicon wave plasma enhanced chemical vapor deposition, the effect of SiH4/N2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a-SiNx:H films with different compositions are deposited.

本工作采用螺旋波等离子体化学气相沉积方法制备了氢化非晶氮化硅薄膜，系统地研究了不同反应气体配比对薄膜特性的影响，得到了沉积不同组分a-SiN_x：H的典型实验条件。

And then the title compound was synthesized through reacting of 5-fluorouracil with hexyl isocyanate in the presence of 4-(N,N-diethylamino)pyridine as catalyst.

以正庚酸、氯化亚砜和叠氮化钠为原料，通过酰化、库尔提斯重排反应制备异氰酸己酯，然后在4吡啶催化下与5氟尿嘧啶缩合得到抗癌药物卡莫氟，总收率75.4%。

In paper effect of oxygen and carbon action on minority carrier lifetime in thermal process of mc-Si cell and properties of Si_3N_4 film and effects of antirefle-ction and passivation were studied.

为此本文重点研究了多晶硅片在电池制造热工艺中氧碳的行为及其对少子寿命的影响；并研究了氮化硅薄膜的性能及对多晶硅电池的减反射及钝化作用。

At higher applied forces, rhenium diboride is a little bit below that.

在更高的作用力下，二硼化铼的硬度仅比氮化硼稍低。

It was prepared from \%o\% nitroaniline and \%m\% aminophenol by diazotisation, coupling reaction and reduction, yield was 89%.

以邻硝基苯胺和间氨基酚为原料，经重氮化、偶合、还原制备了 2 (2 羟茎 4 氨基苯基)氢化苯并三唑，产率为 89%。

The results show that the new fluid nitriding process, which the key component is the fluid bed reactor, could make synthesis condition assuasive, low cost and good effect.

结果表明：以流化床反应器为核心的流化氮化新工艺合成条件温和、原料成本低、效果好。

However, as the name（read－only memory）implies, CD disks cannot be written onorchanged in any way.

然而，正如其名字所指出的那样，CD盘不能写，也不能用任何方式改变其内容。

Galvanizes steel pallet is mainly export which suits standard packing of European Union, the North America. galvanizes steel pallet is suitable to heavy rack. Pallet surface can design plate type, corrugated and the gap form, satisfies the different requirements.

镀锌钢托盘多用于出口，替代木托盘，免薰蒸，符合欧盟、北美各国对出口货物包装材料的法令要求；喷涂钢托盘适用于重载上货架之用，托盘表面根据需要制作成平板状、波纹状及间隔形式，满足不同的使用要求。