氧化钒

Thermochromic properties of vanadium dioxide thin films are applied to solar energy materials, photoeletric switch and bolometer materials for the uncooled microbolometers due to their high temperature coefficient of resistance at room temperature.

中文摘要具热致变特性之VO2薄膜因在室温附近有明显的相转变现象，同时发生光电性质的急遽的转变，且在室温之下有较高的电阻温度系数，所以在一系列氧化钒化合物中格外被受瞩目；VO2因这些性质而被广泛应用於太阳能控制材料、电学开关、光学开关及非冷却型辐射热感测器等半导体元件之中。

In this subject, we have successfully prepared ordered oxide films on the single metal crystals including aluminum oxide, vanadium oxide, cerium oxide, chromium oxide and magnesium oxide in nano size.

本项目在超高真空中制备了各种纳米有序氧化物薄膜（包括氧化铝、氧化钒、氧化铈、氧化镁和氧化铬）和氮化铈薄膜。

The solutions of family wiLink and platform oMAP-Vox support oral communication voWLAN , they are positioned BY TI in that number and for the creation on their base of IMS- applications.

解OMAP的平台和家庭wilink-氧化钒支持VOWLAN口头沟通、他们是在这个位置的钛数量为创造自己的基地磁珠申请。

Usually it turns into emerald at the time of chromium oxide or vanadium oxide, while aquamarine is formed due to the coloring of ferrous oxide, it becomes verobieffite due to the existence of magnesium, while heliodor is formed due to the coloring of iron oxide.

在存在氧化铬或氧化钒时通常就成了祖母绿，而海蓝宝石则是由于氧化亚铁着色而成的。成为铯绿柱石是由于镁的存在，而金绿柱石则是因氧化铁着色而成的。

Vanadium oxide thin films are widely used in the field of uncooled IR detecting and imaging for its high temperature coefficient of resistance.

氧化钒薄膜由于具有高电阻温度系数，近年来被广泛应用于非制冷红外探测及红外成像领域。

W - doped vanadium dioxide film was prepared by dipping V - W commixed sol on surface of glass slide and reducing in hydrogen atmosphere.

采用钒-钨混合溶胶及浸渍提拉法在玻璃基片上涂五氧化二钒膜，再通过氢还原法制备掺钨二氧化钒薄膜。

One is low valence vanadium oxide thin films were deposited by direct current facing target magnetron sputtering firstly, and then thermal oxidated; the other is high valence vanadium oxide thin films were deposited by ion beam sputtering, then thermal deoxidated. Vanadium oxide thin films with phase transition were obtained at the lower thermal process temperature 300℃, which is compatible with MEMS technologys. The composition of VO_x thin film fabricated by first method includes mainly VO_2, V2O3 and VO_, the TCR is -2.25%/K, the TCR gradually increases with phase transition temperature decreases. The composition of VO_x thin film fabricated by the second method includes mainly VO_2, V2O5 and V2O3 , and the resulting VO_x thin filmTCR is -3.0%/K. The TCR of phase transition vanadium oxide thin films made by second method is higher than that made by first method for the existance of V2O5 in thin films.

分别采用直流对靶磁控溅射制备低价态氧化钒薄膜再附加热氧化处理的方式，和射频离子束溅射制备高价氧化钒薄膜附加热还原处理的方式获得了具有相变特性的氧化钒薄膜，第一种方式获得相变特性氧化钒薄膜的热处理温度最低为300℃，克服了以往高温条件下热处理不能与MEMS工艺兼容的缺点；相变特性氧化钒薄膜的组分以VO_2为主，含有V2O3和VO_，室温TCR为-2.25%/K；室温电阻温度系数随相变温度的降低逐渐升高；采用第二种方式获得的相变氧化钒薄膜的组分以VO_2为主，含有V2O5和V2O3，室温TCR可达-3.0%/K；分析发现，具有相变特性的氧化钒薄膜中含有V2O5时，室温电阻温度系数明显增大。

In acidic system, the solubility of vanadium was reduced because of the exisiting of insoluble vanadium oxide.

酸性体系中，固相中含有更不易溶的氧化钒，降低钒盐的溶解度。

Two kinds of multi-layer structure of VO_x/PS/Si and VO_x/Si were fabricated, and the effects of porous silicon on the composition of vanadium oxide thin films were analysed.

对比了VO_x/PS/Si结构与VO_x/Si结构中氧化钒薄膜电阻对温度的热敏感性能，研究了多孔硅基底温度升高对氧化钒薄膜组分的影响。

The authors have prepared vanadium oxide films by plasma-enhanced chemical vapor depostion and pulsed laser deposition.

鉴于氧化钒是应用于锂充电电池的最有希望的电极材料之一，采用等离子体增强化学气相沉积法和激光溅射沉积法，制备了不同的氧化钒薄膜，并研究了它们的电化学性质。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。