氧化物薄膜

We try to synthesize the Co doped TiO2 dilute magnetic semiconductor structure via thermal treatments under vacuum environment, and study its magnetic property. The results reveal that during thermal treatments in a vacuum environment, the Co grains may form the oxide phase structure, and lose their magnetic properties.

研究结果发现在真空高温退火过程中，虽然钴粒子会均匀扩散至非晶的二氧化钛薄膜，其铁磁性的行为却因此消失，由实验结果推断在高温回火过程中，钴可能形成反铁磁的氧化物的结构。

The invention relates to an organic thin-film transistor of three-layer composite film insulated gate which comprises a substrate (1), a metal electrode (2), a organic semiconductor layer (6), a source/leakage electrode; and also comprises: a low dielectric constant polymer layer (3), a high dielectric constant oxide layer (4), a low dielectric constant polymer layer (5), three-layer composite film insulated gate is composed of the (3) layer, the (4)layer and the (5) layer.

本发明涉及三层复合膜绝缘栅的有机薄膜晶体管，包括衬底(1)，金属电极(2)，有机半导体(6)层，源/漏电极(7)；还包括：低介电常数聚合物层(3)，高介电常数氧化物层(4)，低介电常数聚合物层(5)，所述的(3)、(4)和(5)层构成三层复合膜绝缘栅。

In recent years, Indium tin oxide thin films have attracted intensive interest because of their unique characteristics.

引 言铟锡氧化物是In2O3掺Sn的半导体材料，其薄膜由于具有优良的导电性和光学性能，引起了人们的广泛关注。

Deposition temperature can have a great effect on the structure and electrical properties of ITO films.

制备温度对薄膜的结构和电学特性有很大的影响，当衬底温度过低时，ITO膜中容易出现金属相和低价锡氧化物。

Chapter 1: The general review of the history and present research situation of the perovskite manganite physics and thin films is given.

第一章全面介绍了巨磁阻锰氧化物的物理和薄膜的研究状况。

The influence of sputtering pressure on structure character,morphology,overpotential,resistivity and growth rate was studied.

采用对靶直流磁控溅射设备制备镍铁氧化物催化薄膜，研究了溅射气压与催化薄膜的结构、表面形貌、过电位、电阻率及生长速率之间的关系。

The Density Functional Perturbation Theory can be used to reveal the lattice dynamics based the Density Functional Theory.

本论文利用第一性原理方法，从原子和电子层面上研究了氧化物电介质薄膜的表面效应以及界面应力作用的基本规律。

Now boron suboxide is usually prepared under the condition of HP-HT. We prepared our boron suboxide films by the method of PLD.

制备硼的亚氧化物的薄膜需要hot-pressing技术，现今更是以HP-HT合成方法制备得到。

Possessing the characters of high hardness, low density and inert chemical properties, boron suboxide is the best candidate for super-hard films. The synthesis technique of boron suboxide film is hotpressing.

硼的亚氧化物是坚硬薄膜材料的最佳侯选物之一，具有高硬度，低密度，稳定的化学性质及很多有意思的物理性质等特质。

The electrochemical quartz crystal microbalance, cyclic voltammetry, and SEM were used to study the growth mechanism of the mixed of osmium hexachloroplatinate (OsPtCl6), osmium oxide and platinum films.

本实验使用电化学石英晶体微天平、扫描式电子显微仪及循环伏安法来研究锇氧化物/铂/锇铂氯化物薄膜的沉积与薄膜成长之机制及电化学特性。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。