氧化物薄膜

Chapter 1: The general review of the history and present research situation of the perovskite manganite oxides physics and thin films is given, such as the crystal and electronic structure, double exchange model, charge-ordering, electronic transport, CMR effect, phase separation, effects of doping level and so on, are introduced.

第一章全面介绍了巨磁阻锰氧化物的物理和薄膜的研究状况。首先回顾了锰氧化物的各种性质，如晶体结构，电子结构，双交换模型，电荷有序，输运性与巨磁效应，相分离，掺杂效应等。

Keywords perovskite manganite;pulsed laser deposition;CMR thin film;ANSYS software;heat/mechanics effect;plasma transport;dynamics Monte Carlo;the simulation of thin film growth

钙钛矿锰氧化物；脉冲激光沉积； CMR薄膜； ANSYS软件；热/力学效应；等离子体的输运；动力学蒙特卡洛方法；薄膜生长模拟

Lead oxide is a traditional n-type semiconductor material, and it has many advantages, such as low growth temperature, simple preparation methods, high photoconductive and corrosion resistance properties.

氧化铅是一种传统的n型氧化物半导体材料，具有很多的优点，如生长温度低，制备方法简单，耐腐蚀性强，具有很好的光电特性和气敏特性等等，由于氧化铅的这些优点，氧化铅薄膜被广泛应用于透明导电薄膜、摄像、光电探测、气体敏感和耐腐蚀保护膜等领域。

In this dissertation, we present soft x-ray spectroscopic measurements and epitaxial growth of manganese and cobalt oxides to investigate their orbital ordering and electron correlations.

本论文系结合电子能谱技术及脉冲式雷射薄膜成长技术，来探讨锰氧化物与钴氧化物的轨域极化与电子关联。

Keeping a certain oxygen pressure in the deposition chamber to convert the partially oxidized yttria into perfect oxidized yttria, the absorption coefficient of the films would be decreased.

本文通过在镀膜过程中向真空室中充入一定气压的氧，保证不完全氧化物再度合成为完全氧化物，从而降低了Y〓O〓薄膜的光学吸收系数。

For the first time, conductive LaNiO〓 thin films have been successfully prepared by metalorganic decomposition using 2-ethylhexanoates of lanthanum and nickel as the metalorganic precursors.

近年来的研究表明：铁电薄膜与金属电极的界面失配和扩散是影响铁电薄膜器件疲劳特性的重要因素，具有与铁电薄膜同为钙钛矿结构的导电氧化物电极，对改善疲劳现象具有显著的作用（疲劳寿命从10〓提高到10〓）。

After coating the solutions on the substrates, the precursor films will go through a heat treatment to pyrolyze the polymer and form solid films, In this paper, we show some representative oxide and nitride films grown by PAD, including simple oxide/nitride such as TiO2, GaN, A1N and complex oxide/nitride such asTiO3 and Ti(subscript 1-x)AlN.

该文介绍了使用该方法制备的一些具有代表性的氧化物和氮化物薄膜，包括简单氧化物／氮化物，如TiO2、GaN和AlN等，复杂氧化物／氮化物如（Ba，SrTiO3、Ti(下标 1-x)AlN等。

A Dense scale on the2O3(Cr/Y=4/1) coated specimen;2O3(Al/Y=3.6/1) coated specimen; Oxide nodules formed at the corner on the specimen coated with2O3(Cr/Y=2/1) deposited for 15 s; Locally spalled scale on the same specimen as in; The trace of cracks in the deposited oxide film on the scale formed on the specimen coated with2O3 (Cr/Y=2/1) deposited for 60 s; Showing the similar trace on the same specimen as in b

沉积复合OTFC试样的氧化层形貌有如下特征：(1)氧化层绝大部分致密、完整、与基体附着良好，晶粒细小（图7a，7b）；(2)在短时间(15s)沉积2O3 OTFC试样的局部表面出现了不均匀氧化（图7c，7d），但只是在沉积Cr/Y=4/1膜试样的局部表面产生了类似无涂层Fe25Cr上剥落的厚膜（图7d）；(3)沉积2O3(Cr/Y=2/1) 60s（图7e）与15s（图7c）的结果不同，前者整个试样表面氧化产物颗粒细小，无粗大氧化物颗粒形成；(4)沉积2O3(Cr/Y=2/1) 60s和2O3(Al/Y=3.6/1)薄膜的试样由于氧化增重非常少，氧化层很薄，刻印着涂层中局部出现的裂纹（图7e，7f），这种印迹的保留可能反映着传质机制的改变，即新氧化物由在外表面形成转变为在外表面以下形成。

The cyclic voltammograms recorded the deposition of the ruthenium oxide, Ruthenium oxide/hexachloroiridate(RuOx /IrCl6), platinum films have been prepared, and ruthenium oxide/hexachloroiridate/platinum(RuOx /IrCl62-/Pt) hybrid films directly preparation from the mixing of Ru3+, IrCl62–and PtCl62– ions from the acidic aqueous solutions.

钌氧化物，钌氧化物/铱氯化物(RuOx /IrCl6)，铂，钌氧化物/铂/铱氯化物(RuOx /IrCl62-/Pt)薄膜，在酸性溶液中可经由混合Ru3+、IrCl62–和 PtCl62–或单独各别透过循环伏安法所制备而成。

The structure of the thin film capacitor 1 of this invention is: form sequentially at least the bottom electrode layer 102, the high dielectrics constant oxide film 103 and the upper electrode layer 105 on the semiconductor substrate 101; said upper electrode layer 105 which is a film layer 104 formed by the electrical conductive material which is processable by reactive ion etching, or a multilayered film composed of two kinds of film layers 107 and 108, which are each formed of a conductive material which is processable by at least two kinds of reactive ion etching.

要约 薄膜电容器1是至少在半导体基片101上按顺序形成下部电极层102、高介电常数氧化物膜层103、上部电极层105而构成的薄膜电容器，该上部电极层105由一种仅由可用反应性离子刻蚀加工的导电性材料形成的膜层104，或至少两种由可用反应性离子刻蚀加工的导电性材料分别形成层状的多层膜层107和108构成；经历350℃的热试验之后，对该薄膜电容器1施加OV到2V的驱动电压的薄膜电容器漏电电流密度为1×10 －8 A/cm 2 以下。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。