氧化物薄膜

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

Seventh: The sol-gel method developed here for the synthesis of nanocrystalline film gate are compatible with conventional silicon planar technology, and there is no any limitation to the polarity of the film type n or p for making different kinds of nanocrystalline-film-gate-OSFET sensor. This is a very important basic work for the extending, improving and integrating of the similar devices.

七、研究开发的制备氧化物及复合氧化物纳米晶薄膜的溶胶—凝胶工艺可以实现与硅平面工艺兼容，采用该工艺可以制作不同纳米薄膜栅的OSFET新型气敏元件，薄膜的导电类型不受限制，可以是N型的，也可以是P型半导体，为该种类器件的推广和改进以及进一步的集成化创造了基础。

In this thesis, the influence of the lattice-misfit strain and oxygen contents on the thickness effects of CMR manganite thin films was carefully investigated.

更重要的是，从应用研究上来讲，对巨磁阻薄膜的研究和探索，不仅对当前的自旋电子学的应用有重要意义，而且为全氧化物或氧化物-金属原型薄膜器件的研制提供了有效途径。

In this thesis, the influence of the lattice-misfit oxygen and strain contents on the thickness effects of CMR manganite thin films was carefully investigated.

更重要的是，从应用研究上来讲，对巨磁阻薄膜的研究和探索，不仅对当前的自旋电子学的应用有重要意义，而且为全氧化物或氧化物-金属原型薄膜器件的研制提供了有效途径。

The results show that the films are characterized by the amorphous microstructure and mainly composed of Si C bondings, C C bondings as well as a small mount of oxide impurity consorted with Si; the content of the C C bondings decreased after annealing in vacuum, meanwhile the Si C bondings content increased, annealing in vacuum is beneficial to the formation of SiC; after annealing at 800 in air, a thin dense layer of SiO2 formed on the surface, which prevented the oxygen from contacting with the film and effectively protected the inner SiC from oxidizing.

结果表明，薄膜主要以非晶为主，由Si--C键， C--C键和少量Si的氧化物杂质组成；在真空条件下经高温退火后，薄膜C--C键的含量减少，而Si--C键的含量增加，真空退火有利于SiC的形成；在800℃空气中退火后，薄膜表面生成一层致密的SiO2薄层，阻止了氧气与薄膜内部深层的接触，有效保护了内部的SiC。

With the help of large plasma generation and the pressure, both of the samples sintered at 900℃ and 1100℃ are densified.

这主要是由于等离子体的产生，从而破坏粉末表面氧化物薄膜，使样品表面清洁得以充分接触，加之烧结的时间较短和压力的施加等因素造成的。

Leontis and Rhines and Markworth have also demonstrated the presence of MgA1204 in the surface oxide films on high A1-Mg alloys.

Leontis和Rhines和Markworth也证实存在MgA1204表面氧化物薄膜的高A1-Mg合金。

Glass coatings that include iron and cerium oxidations were prepared by citric acid sol-gel and dip-coating method.

采用柠檬酸溶胶－凝胶法制备了含有铁离子和铈离子的溶胶，并用浸渍－提拉法和热处理工艺在玻璃表面镀制了Fe/Ce氧化物薄膜。

Part II:A novel conductive composite film (MWCNTs-RuOx) containing multi-walled carbon nanotubes with ruthenium oxide was synthesized on glassy carbon electrode, gold and indium tin oxide, screen printed carbon electrode by potentiostatic methods.

第二部分的氧化钌-奈米碳管薄膜(MWCNTs-RuOx)是一种新的传导性复合薄膜，包含多层奈米碳管与钌氧化物，可藉由电位静力学法制备在玻璃碳电极、黄金电极、铟锡氧化物电极和网板碳电极上。

The results showed that the combination of rare earth element La and transition element Ti is advantageous to the bonding state between diamond particles and matrix. So it can improve the materials properties.

经X射线衍射分析发现，合金粉中的活性La、Ce能够还原Ti颗粒表面的氧化物薄膜，提高了Ti的活性，从而促进了Ti和金刚石的反应。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。