氘化

A memo published in Britain by the Times, if authentic, shows Iran in 2007 about to embark on a four-year set of experiments, picking up on related past work, to develop a neutron initiator, or bomb trigger, containing uranium deuteride, or UD3 (a compound used by Pakistan in its bombs).

英国泰晤士报公布了一份备忘录，如果其内容真实，则其表明伊朗在2007即将开始着手一系列实验，恢复了之前停止的相关的工作，开发中子起爆器，或者称作核弹起爆器，其中包含着溴化氘或者称为UD3(一种巴基斯坦在其核弹中使用的化合物)。

The data were applied to simulate the neutron energy spectrum and angular distribution of Lanzhou University 3×10^12 s^(-1) intense neutron generator with 260 keV deuteron beam using MCNP. The interactions of neutron and the materials of neutron generator and laboratary wall were included in this MCNP simulation. The simulation results on the neutron energy spectrum and angular distribution of Lanzhou University 3×10^12 s^(-1) intense neutron generator with 260 keV deuteron beam were presented.

以分割法计算得到的能谱和角分布数据为基础，建立了D-T中子源Monte-Carlo模拟抽样模型，在考虑中子发生器各元件材料及实验大厅墙壁对快中子的慢化、散射和吸收的条件下，采用MCNP程序对兰州大学3×10^12s^(-1)强流中子发生器260 keV氘束流能量下的中子能谱和角分布进行了模拟，给出了模拟结果。

The data were applied to simulate the neutron energy spectrum and angular distribution of Lanzhou University 3×1012 s-1 intense neutron generator with 260 keV deuteron beam using MCNP.

以分割法计算得到的能谱和角分布数据为基础，建立了D-T中子源Monte-Carlo模拟抽样模型，在考虑中子发生器各元件材料及实验大厅墙壁对快中子的慢化、散射和吸收的条件下，采用MCNP程序对兰州大学3×1012 s-1强流中子发生器260 keV氘束流能量下的中子能谱和角分布进行了模拟，给出了模拟结果。

AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.

氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程，利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝，再直接溅镀金属铝作为指叉电极，比较目前文献制作出来的氮化铝MSM元件，可得到很好的元件金半接面之理想因子1.0125，算出萧特基能障高度为0.916eV，并有很低的暗电流为1.39 pA，提升了元件的特性，使用150 W氘灯入射，光暗电流差距可到两个order，且元件之光电流与入射光功率呈线性，显示所制作之氮化铝MSM元件，很适合针对深紫外光波段侦测。

The distribution of protium and deuterium in zirconium hydride films are analyzed by using depth profiles and images of SIMS.

电阻蒸发制备的锆膜氢化后，利用二次离子质谱对其进行了深度剖析与成像分析，结果表明氕与氘在锆膜深度分布均匀，在过渡层中呈递减分布，并消失于过渡层与衬底的交界处。

The photodegradation rate of M-PPV 1 was constrained by DABCO that quenches the triplet state of M-PPV; 2increased when the solvent changed from benzene to deuterated benzene in whichthe lifetime of triplet state is longer than that in benzene; 3 was improveddramatically with high concentration of M-PPV triplet state was generated by energytrasfer from biacetyl.

发现：1能猝灭M-PPV的三重态的1，4-二氮二环[2.2.2]辛烷也能有效地抑制光氧化反应的进行；2能提高M-PPV三重态寿命的氘代溶剂也能使M-PPV光氧化降解速率加快，3丁二酮和M-PPV间的能量传递能够提高M-PPV三重态的浓度，这和丁二酮作三重态敏化剂敏化光氧化M-PPV时，M-PPV的光降解速率大大增加也是一致的。

The alkylation of deuterated benzene with ethylene catalyzed by the dehydrated Cl/FeCl3 ionic liquid was investigated by GC-MS and 1H NMR.

将合成的Cl/FeCl3离子液体脱水，并采用同位素置换的方法研究了离子液体催化全氘代苯与乙烯的烷基化反应机理。

What would he tell Judith and the children?

他将怎样告诉朱迪丝和孩子们呢？

I this is at that time, the opinion with peacockish true girl is full of in a heart.

这就是当时的我，一个心中布满虚荣的女孩子真实的想法。