正向偏置的

For the circuit to work,of course,polarities of both the base and collector circuits have to be correctforward bias applied to the base circuit,and the collector supply connected so that the polarity of the common element(the emitter is the same from both voltage sources.

对于电路的工作来说，当然，基极和集电极电路是需要更正的（正向偏置电压加在基极电路和集电极电路以便于发射极的电压极性和电压源的电压极性是相同的。

When a diode is used in an application wherein it may be forward biased and driven with excessive current

拟译：在应用中如果二极管正向偏置时的驱动电流很大，就要

When forward biased, the two pFETs have a voltage drop that is much lower than a traditional blocking diode.

这2个pFET在正向偏置时的压降远低于传统阻断二极管。

When the diode is forward biased, it begins to conduct with only a small forward voltage across it, which is on the order of one volt.

图 1-4A-1 为二极管的线路符号。二极管正向偏置时导通，并有 1 伏左右的正向压降。

When the sensor is forward biased at a current of 2 mA, the range of positive temperature coefficient of the sensor resistance is extended up to +300 C as a result of the minority current discontinuity and majority carrier injection.

当传感器在2mA的正向偏置电流下，由于少数载流子的不连续性以及多数载流子的注入，传感器电阻的正温度系数区拓宽到573K（＋300℃）以上。

Normal working hours, B2-B1 between the need to add a positive voltage, E-B1 between the PN junction forward biased if the Canadian single-junction transistors that turn, after turn-on, E-B1 between the resistance will soon be reduced, to B2-B1 between the current rapid increase in current increase, so that the resistance between the E-B1 further reduced, so the formation of a strong positive feedback.

正常工作时，B2—B1间需加正电压，E—B1间的 PN结若加正向偏置，单结晶体管即导通，导通后，E—B1间的电阻会很快降低，使B2—B1间的电流迅速增加，电流的增加，又使E—B1间的电阻更进一步的减小，如此形成了强烈的正反馈。

You can almost always determine the leads of a bipolar transistor with an ohm meter. b-e and b-c junctions will measure like a diode with the b-c junction reading slightly lower than the b-e junction when forward biased.

你几乎总是可以用欧姆表来判断双极性晶体管的脚位。b-e结和b-c结将像二级管那样测量，而且正向偏置时，b-c结的读数稍微比b-e结低一点。

B-e and b-c junctions will measure like a diode with the b-c junction reading slightly lower than the b-e junction when forward biased.

发射结和集电结跟二极管差不多，集电结正向偏置时的读数要稍小于发射结。

Thus, the output will always be driven by a single transistor, either P- channel or N-channel. Since they are as closely matched as possible, the output resistance of the gate will always be the same, and signal behavior is therefore more predictable. Fig. 3.4 CMOS NAND gate One of the main problems with CMOS gates is their speed. They cannot operate very quickly, because of their inherent input capacitance. B-series devices help to overcome these 24 Lesson 3 CMOS Logic Circuit 25 limitations to some extent, by providing uniform output current, and by switching output states more rapidly, even if the input signals are changing more slowly. Note that we haven't gone into all of the details of CMOS gate construction here. For example, to avoid damage caused by static electricity, different manufacturers developed a number of input protection circuits to prevent input voltages from becoming too high. [3] However, these protection circuits don't affect the logical behavior of the gates, so we won't go into the details here. New Words and Phrases 1. CMOS abbr.

略语互补金属氧化物半导体(complementary metallic oxide semiconductor)逻辑，逻辑学，逻辑性，推理方法补充的，补足的，互补的电池供电的门电路，逻辑门，闸门，控制栅，大门，通道，门口，入口伏特，环骑，闪避基础的，基本的，主要的基本原则，基本原理增强型金属氧化物半导体场效应晶体管(metallic oxide semiconductor field effect transistor)反相器，反用换流器，变极器来源，水源，消息来源，原始资料，发起者源，源极排水沟，消耗，排水漏极排出，喝干，耗尽排水，流干，耗尽相同的，相配的，匹配的匹配有效地，有力地，事实上，实际上无限的东西无穷大无穷的，无限的，无数的，极大的接地的正向偏置的，正偏的或非 25 2。

Due to forward-bias-induced annealing effects,the laser diode biased during irradiation is less degraded than that short-circuited,and annealing curves can be fitted sectionally with different annealing rates.

激光二极管辐射损伤存在着正向偏置退火效应，FP和DFB结构的二极管具有相似的加电退火规律，均可拟合成指数衰减形式，退火曲线可以分成退火常数不同的几段进行拟合。

In the negative and interrogative forms, of course, this is identical to the non-emphatic forms.

。但是，在否定句或疑问句里，这种带有"do"的方法表达的效果却没有什么强调的意思。

Go down on one's knees;kneel down

屈膝跪下。。。下跪祈祷